scholarly journals Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region

2017 ◽  
Vol 917 ◽  
pp. 052002 ◽  
Author(s):  
E I Moiseev ◽  
N V Kryzhanovskaya ◽  
M V Maximov ◽  
A M Mozharov ◽  
A S Gudovskikh ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Surface Passivation ◽  
Microdisk Lasers ◽  
Effect Of Surface

scholarly journals Microdisk lasers based on GaInNAsSb/GaAsN quantum well active region

2015 ◽  
Vol 643 ◽  
pp. 012040
Author(s):  
E I Moiseev ◽  
N V Kryzhanovskaya ◽  
Yu V Kudashova ◽  
M V Maximov ◽  
M M Kulagina ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Microdisk Lasers

scholarly journals Temperature stability of small-signal modulation response of WGM microlasers with InGaAs/GaAs quantum well-dots in the active region

2021 ◽  
Vol 2086 (1) ◽  
pp. 012082
Author(s):  
N K Isaev ◽  
E I Moiseev ◽  
N A Fominykh ◽  
N V Kryzhanovskaya ◽  
F I Zubov ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Elevated Temperatures ◽  
Diode Lasers ◽  
Temperature Stability ◽  
Small Signal ◽  
Signal Modulation ◽  
Modulation Response ◽  
Microdisk Lasers ◽  
Small Signal Modulation

Abstract In this paper, results are presented on III-V quantum well dot microring diode lasers tested at elevated temperatures. To the best of our knowledge, the first uncooled microdisk lasers with diameter of 40 μm with 3-dB bandwidth above 2 GHz at 55°C are demonstrated.

scholarly journals Output power of multilayered InGaAs/GaAs quantum well-dot microdisk lasers

2021 ◽  
Vol 2086 (1) ◽  
pp. 012081
Author(s):  
N A Fominykh ◽  
E I Moiseev ◽  
Ju A Guseva ◽  
M V Maximov ◽  
A I Lihachev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Quantum Well ◽  
Output Power ◽  
Optical Power ◽  
Threshold Current ◽  
Sudden Drop ◽  
Output Optical Power ◽  
Number Of Layers ◽  
Microdisk Lasers

Abstract We studied the output optical power of microdisk lasers with InGaAs/GaAs quantum dots active region. An increase in the number of layers in the active region in the waveguide from 2 to 6 leads to increase in the peak output optical power due probably to increase of the gain. We also observe a corresponding increase of the threshold current due to the increase on the transparence current. The maximal optical power is achieved for structure with 6 layers at approximately 60 mA injection current. Further increase of the number of the QD layers to 10 results in increase of the threshold current and sudden drop of the output power.

ZnO Nanoparticles, Nanorods, Hexagonal Plates and Nanosheets Produced by Polyol Route and the Effect of Surface Passivation by Acetate Molecules on Optical Properties

2019 ◽  
Vol 48 (10) ◽  
pp. 6437-6445
Author(s):  
Eduardo F. Barbosa ◽  
Jaqueline A. Coelho ◽  
Edna R. Spada ◽  
Daniel R. B. Amorim ◽  
Livia M. C. Souza ◽  
...  
Keyword(s):  
Optical Properties ◽  
Zno Nanoparticles ◽  
Surface Passivation ◽  
Effect Of Surface

Non-equilibrium quantum well populations and active region inhomogeneity in polar and nonpolar III-nitride light emitters

2012 ◽  
Vol 111 (10) ◽  
pp. 103113 ◽  
Author(s):  
Mikhail V. Kisin ◽  
Chih-Li Chuang ◽  
Hussein S. El-Ghoroury
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Light Emitters ◽  
Non Equilibrium

scholarly journals Influence of coating layers on characteristics of microdisk lasers with InAs/InGaAs quantum dots active region

2018 ◽  
Vol 1124 ◽  
pp. 041020
Author(s):  
I Y Agafonov ◽  
N V Kryzhanovskaya ◽  
E I Moiseev ◽  
A S Dragunova ◽  
M V Fetisova ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Microdisk Lasers ◽  
Coating Layers

Red-shift in the InGaAsP/GaInP active region using impurity free vacancy diffusion induced quantum well intermixing

2015 ◽  
Vol 644 ◽  
pp. 398-403 ◽  
Author(s):  
Tao Lin ◽  
Haoqing Zhang ◽  
Ruijuan Sun ◽  
Yupeng Duan ◽  
Nan Lin ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Red Shift ◽  
Vacancy Diffusion ◽  
Quantum Well Intermixing ◽  
Free Vacancy
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