scholarly journals Optimization of low cost, non toxic, earth abundant p-type Cu2SnS3thin film for Photovoltaic application

Author(s):  
J J Chaudhari ◽  
S Patel ◽  
U S Joshi
2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Jian Zhang ◽  
Jingjing Zhang ◽  
Feng He ◽  
Yijun Chen ◽  
Jiawei Zhu ◽  
...  

AbstractExploring low-cost and earth-abundant oxygen reduction reaction (ORR) electrocatalyst is essential for fuel cells and metal–air batteries. Among them, non-metal nanocarbon with multiple advantages of low cost, abundance, high conductivity, good durability, and competitive activity has attracted intense interest in recent years. The enhanced ORR activities of the nanocarbons are normally thought to originate from heteroatom (e.g., N, B, P, or S) doping or various induced defects. However, in practice, carbon-based materials usually contain both dopants and defects. In this regard, in terms of the co-engineering of heteroatom doping and defect inducing, we present an overview of recent advances in developing non-metal carbon-based electrocatalysts for the ORR. The characteristics, ORR performance, and the related mechanism of these functionalized nanocarbons by heteroatom doping, defect inducing, and in particular their synergistic promotion effect are emphatically analyzed and discussed. Finally, the current issues and perspectives in developing carbon-based electrocatalysts from both of heteroatom doping and defect engineering are proposed. This review will be beneficial for the rational design and manufacturing of highly efficient carbon-based materials for electrocatalysis.


Author(s):  
Tingting Deng ◽  
Pengfei Qiu ◽  
Tong Xing ◽  
Zhengyang Zhou ◽  
Tian-Ran Wei ◽  
...  

Cu-Sn-S ternary compounds have attracted great attention in thermoelectric community because they are composed of low-cost, earth-abundant, and non-toxic elements. Among them, Cu7Sn3S10 shows promising thermoelectric performance in the middle...


Author(s):  
Hailin Zhao ◽  
Jie Tang ◽  
Zengyuan Li ◽  
Jie Yang ◽  
Hao Liu ◽  
...  

Catalytic oxidation is the most effective method to eliminate the in-door formaldehyde, the Mn-based catalyst with low cost and high activity has drawn great attention. Herein, p-type semiconductor NiO doped...


2018 ◽  
Vol 4 (11) ◽  
pp. eaau8131 ◽  
Author(s):  
Qing Zhao ◽  
Michael J. Zachman ◽  
Wajdi I. Al Sadat ◽  
Jingxu Zheng ◽  
Lena F. Kourkoutis ◽  
...  

Electrochemical cells based on aluminum (Al) are of long-standing interest because Al is earth abundant, low cost, and chemically inert. The trivalent Al3+ ions also offer among the highest volume-specific charge storage capacities (8040 mAh cm−3), approximately four times larger than achievable for Li metal anodes. Rapid and irreversible formation of a high-electrical bandgap passivating Al2O3 oxide film on Al have, to date, frustrated all efforts to create aqueous Al-based electrochemical cells with high reversibility. Here, we investigate the interphases formed on metallic Al in contact with ionic liquid (IL)–eutectic electrolytes and find that artificial solid electrolyte interphases (ASEIs) formed spontaneously on the metal permanently transform its interfacial chemistry. The resultant IL-ASEIs are further shown to enable aqueous Al electrochemical cells with unprecedented reversibility. As an illustration of the potential benefits of these interphases, we create simple Al||MnO2 aqueous cells and report that they provide high specific energy (approximately 500 Wh/kg, based on MnO2 mass in the cathode) and intrinsic safety features required for applications.


2001 ◽  
Vol 15 (17n19) ◽  
pp. 605-608 ◽  
Author(s):  
A. NUÑEZ ◽  
P. K. NAIR ◽  
M. T. S. NAIR

Following the model of DeVos and Pauwels (1981), we calculated the spectral factor of efficiencies (η1) for n +-p or n +-i-p heterojunctions that can be formed by different thin absorber materials (p-type or intrinsic(i)) with n +-type CdS thin films produced by conversion of chemically deposited CdS thin films by doping with Cl or In as reported before. The materials with η1 comparable to that of CuInSe 2 (Eg, 1.01 eV: 57%) are AgBiS 2 (Eg, 0.9 eV: 56%), Cu 2 SnS 3 (Eg, 0.91 eV: 57%), PbSnS 3 (Eg, 1.05 eV: 57%), PbSbS 4 (Eg, 1.13 eV: 56%).


2021 ◽  
Author(s):  
Lijun Zhao ◽  
Mingyuan Wang ◽  
Jian Yang ◽  
Jiabin Hu ◽  
Yuan Zhu ◽  
...  

Abstract Cu3SbSe4, featuring its earth-abundant, cheap, nontoxic and environmentally-friendly constituent elements, can be considered as a promising intermediate temperature thermoelectric (TE) material. Herein, a series of p-type Bi-doped Cu3Sb1 − xBixSe4 (x = 0-0.04) samples were fabricated through melting and hot pressing (HP) process, and the effects of isovalent Bi-doping on their TE properties were comparatively investigated by experimental and computational methods. TEM analysis indicates that Bi-doped samples consist of Cu3SbSe4 and Cu2 − xSe impurity phases, which is in good agreement with the results of XRD, SEM and XPS. For Bi-doped samples, the reduced electrical resistivity (ρ) caused by the optimized carrier concentrations and enhanced Seebeck coefficient derived from the densities of states near the Fermi level give rise to a high power factor of ~ 1000 µWcm− 1K− 2 at 673 K for the Cu3Sb0.985Bi0.015Se4 sample. Additionally, the multiscale defects of Cu3SbSe4-based materials involving point defects, nanoprecipitates, amorphous phases and grain boundaries can strongly scatter phonons to depress lattice thermal conductivity (κlat), resulting in a low κlat of ~ 0.53 Wm− 1K− 1 and thermal conductivity (κtot) of ~ 0.62 Wm− 1K− 1 at 673 K for the Cu3Sb0.98Bi0.02Se4 sample. As a consequence, a maximum ZT value ~ 0.95 at 673 K is obtained for the Cu3Sb0.985Bi0.015Se4 sample, which is ~ 1.9 times more than that of pristine Cu3SbSe4. This work shows that isovalent heavy-element doping is an effective strategy to optimize thermoelectric properties of copper-based chalcogenides.


MRS Advances ◽  
2019 ◽  
Vol 4 (30) ◽  
pp. 1691-1697
Author(s):  
Shuping Lin ◽  
Wei Zeng ◽  
Lisha Zhang ◽  
Xiaoming Tao

ABSTRACT:The present work highlights the progress in the field of flexible thermoelectric generator (f-TEGs) fabricated by 3-D printing strategy on the typing paper substrate. In this study, printable thermoelectric paste was developed. The dimension of each planer thermoelectric element is 30mm*4mm with a thickness of 50 μm for P-type Bismuth Tellurium (Bi2Te3)-based/ poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) leg. A single thermoleg with this dimension can generate a voltage of 5.38 mV at a temperature difference of 70 K. The calculated Seebeck Coefficient of a single thermoleg is 76.86 μV/K. This work demonstrates that low-cost printing technology is promising for the fabrication of f-TEGs.


2019 ◽  
Vol 100 ◽  
pp. 192-199
Author(s):  
Koteeswara Reddy Nandanapalli ◽  
Devika Mudusu ◽  
Gunasekhar K. Reddy
Keyword(s):  
Low Cost ◽  

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