scholarly journals Effect of Process Variables on Deposited Cupric Oxide Thin Film by Sol-Gel Spin Coating Technique

Author(s):  
Dipika Rani Bhowmik ◽  
Aninda Nafis Ahmed ◽  
M A Gafur ◽  
Muhammed Yusuf Miah ◽  
Dipa Islam
2019 ◽  
Vol 6 (1) ◽  
pp. 1
Author(s):  
Susilawati Susilawati ◽  
Aris Doyan ◽  
Lalu Muliyadi ◽  
Syamsul Hakim

Abstract: The growth of tin oxide thin film by Aluminum doping and Fluorine has been carried out with the sol-gel spin coating technique. The growth aims to determine the quality of the thin layer formed based on variations in doping aluminum and fluorine. The basic ingredients used were SnCl2.2H2O, while the doping materials used were Al (Aluminium) and F (Fluorine) with variations in dopant concentrations (0, 5, 10, 15, 20 and 25)%. The growth of a thin layer using measured glass (10x10x 3) mm as a substrate. The growth of thin films includes substrate preparation, sol-gel making, thin film making, and heating processes. The growth of thin layer was dripped on a glass substrate with sol-gel spin coating technique at 1 M sol concentration and treated with maturation for 24 hours. The next step is making a thin layer using a spin coater at a speed of 2000 rpm for 3 minutes. After that, the substrate is heated in an oven at 100°C for 60 minutes. The results showed that the transparency level of the tin oxide layer increases with increasing amounts of doping Aluminum and fluorine. Key words: Aluminum, Fluorine, Sol-gel, Spin Coating, Thin Film, Tin Oxide


2016 ◽  
Author(s):  
K. A. Bogle ◽  
R. D. Narwade ◽  
A. B. Phatangare ◽  
S. S. Dahiwale ◽  
M. P. Mahabole ◽  
...  

2015 ◽  
Vol 640 ◽  
pp. 122-127 ◽  
Author(s):  
Waleed E. Mahmoud ◽  
A.A. Al-Ghamdi ◽  
F.A. Al-Agel ◽  
E. Al-Arfaj ◽  
F.S. Shokr ◽  
...  

2017 ◽  
Vol 07 (04) ◽  
pp. 1750024 ◽  
Author(s):  
Stephen Lourduraj ◽  
Rayar Victor Williams

Thin films of iron (Fe)-doped titanium dioxide (Fe:TiO[Formula: see text] were prepared by sol–gel spin coating technique and further calcined at 450[Formula: see text]C. The structural and optical properties of Fe-doped TiO2 thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet–visible spectroscopy (UV–vis) and atomic force microscopic (AFM) techniques. The XRD results confirm the nanostructured TiO2 thin films having crystalline nature with anatase phase. The characterization results show that the calcined thin films having high crystallinity and the effect of iron substitution lead to decreased crystallinity. The SEM investigations of Fe-doped TiO2 films also gave evidence that the films were continuous spherical shaped particles with a nanometric range of grain size and film was porous in nature. AFM analysis establishes that the uniformity of the TiO2 thin film with average roughness values. The optical measurements show that the films having high transparency in the visible region and the optical band gap energy of Fe-doped TiO2 film with iron (Fe) decrease with increase in iron content. These important requirements for the Fe:TiO2 films are to be used as window layers in solar cells.


2018 ◽  
Author(s):  
Hardeli ◽  
Harry Sanjaya ◽  
Rahadian Zainul

In this research we has investigated synthesis and electrical properties of ITO (Indium Tin Oxide) thin layers doping Aluminum (Al) and ZnO with spin-coating technique through sol-gel process and calcined at ±550 ºC for 1 hour. Effect of Al and ZnO doping on the conductivity of ITO with 0%, 1%, 3% and 5% w/v dopant concentration and the number of coating (4 and 5 layers) has reported. ITO-Al has 2 phases, these are rhombohedral and cubic, the crystal size is 67.31 nm. Meanwhile, ITO-ZnO are rhombohedral, cubic (bixbyite) and hexagonal (wurtzite), with crystallite size value was 67.4 nm. The surface morphology data indicated film thickness was 3.4 µm (ITO-Al) and 0.974 nm (ITO-ZnO). The electrical properties shows that the optimum film in 4 layers coating with the addition of 5% doping value was 17 kΩ/cm2 (ITO-Al) and 5-layered by addition of 5% of doping ZnO (80.800 kΩ/cm2). Meanwhile, ITO-Al thin film with 4 layers coating without doping was 9.331 kΩ / cm2, and for ITO-ZnO (5 layers) coating without doping was 11.796 kΩ/cm2. Al and ZnO doping decrease the electrical conductivity of ITO.


2013 ◽  
Vol 658 ◽  
pp. 237-241 ◽  
Author(s):  
Intan Syaffinazzilla Zaine ◽  
Z.M. Zabidi ◽  
A.N. Alias ◽  
M.H. Jumali

Tungsten organometallic sol and tungsten organometallic-PANi sol were deposited onto SiO2 coated silicon substrates by a sol-gel spin coating technique. SEM studies on tungsten organometallic film show that it consists of many hollows compared to tungsten organometallic doped 1 wt.% PANi while SEM studies on tungsten organometallic doped 4 wt.% PANi show the sample became porous and agglomerated. Tungsten organometallic sensor was responsive towards isopropanol vapour at room remperature with sensitivity of 13.03%. Although the sensitivity of tungsten organometallic-PANi is lower than undoped PANi sensor, the hybrid sensor exhibited good reversibility meanwhile response of undoped PANi sensor decrease extremely with time. The small amount of PANi doping into tungsten organometallic sol improved the sensing properties of the sensor in terms of reversibility and recovery time.


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