Influence of annealing temperature on film morphology and tribological performance of TiSiN–Ag coating

The morphology of compact TiO2 film used as an electron-selective layer and perovskite film used as a light absorption layer in planar perovskite solar cells has a significant influence on the photovoltaic performance of the devices. In this paper, the spin coating speed of the compact TiO2 is investigated in order to get a high-quality film and the compact TiO2 film exhibits pinhole- and crack-free films treated by 2000 rpm for 60 s. Furthermore, the effect of annealing process, including annealing temperature and annealing program, on CH3NH3PbI3-XClX film morphology is studied. At the optimal annealing temperature of 100°C, the CH3NH3PbI3-XClX morphology fabricated by multistep slow annealing method has smaller grain boundaries and holes than that prepared by one-step direct annealing method, which results in the reduction of grain boundary recombination and the increase of Voc. With all optimal procedures, a planar fluorine-doped tin oxide (FTO) substrate/compact TiO2/CH3NH3PbI3-XClX/Spiro-MeOTAD/Au cell is prepared for an active area of 0.1 cm2. It has achieved a power conversion efficiency (PCE) of 14.64%, which is 80.3% higher than the reference cell (8.12% PCE) without optimal perovskite layer. We anticipate that the annealing process with optimal compact TiO2 layer would possibly become a promising method for future industrialization of planar perovskite solar cells.

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Effect of Annealing Temperature on Film Morphology of Organic-Inorganic Hybrid Pervoskite Solid-State Solar Cells

Advanced Functional Materials ◽

10.1002/adfm.201304022 ◽

2014 ◽

Vol 24 (21) ◽

pp. 3250-3258 ◽

Cited By ~ 688

Author(s):

Amalie Dualeh ◽

Nicolas Tétreault ◽

Thomas Moehl ◽

Peng Gao ◽

Mohammad Khaja Nazeeruddin ◽

...

Keyword(s):

Solar Cells ◽

Solid State ◽

Annealing Temperature ◽

Film Morphology ◽

Inorganic Hybrid

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Influence of the Annealing Temperature on the Photovoltaic Performance and Film Morphology Applying Novel Thermocleavable Materials

Chemistry of Materials ◽

10.1021/cm1019537 ◽

2010 ◽

Vol 22 (19) ◽

pp. 5617-5624 ◽

Cited By ~ 27

Author(s):

Martin Helgesen ◽

Morten Bjerring ◽

Niels Chr. Nielsen ◽

Frederik C. Krebs

Keyword(s):

Annealing Temperature ◽

Photovoltaic Performance ◽

Film Morphology

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Effect of Annealing Temperature on Film Morphology of Planar Heterojunction Mixed Halide Perovskite CH3NH3PbI3−xClx Solar Cells Based on Compact ZnO

Chemistry Letters ◽

10.1246/cl.150246 ◽

2015 ◽

Vol 44 (7) ◽

pp. 1022-1024 ◽

Cited By ~ 7

Author(s):

Shude Zhang ◽

Xiaomin Li ◽

Xiangdong Gao ◽

Lei Lei ◽

Xukun Ding ◽

...

Keyword(s):

Solar Cells ◽

Annealing Temperature ◽

Film Morphology ◽

Halide Perovskite ◽

Planar Heterojunction

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Hydrogenation of ZnFe2O4 Flat Films: Effects of the Pre-Annealing Temperature on the Photoanodes Efficiency for Water Oxidation

Surfaces ◽

10.3390/surfaces3010009 ◽

2020 ◽

Vol 3 (1) ◽

pp. 93-104 ◽

Cited By ~ 2

Author(s):

Annalisa Polo ◽

Charles R. Lhermitte ◽

Maria Vittoria Dozzi ◽

Elena Selli ◽

Kevin Sivula

Keyword(s):

Water Oxidation ◽

Zinc Ferrite ◽

Oxygen Vacancies ◽

Annealing Temperature ◽

The Other ◽

Hydrogen Treatment ◽

Film Morphology ◽

Structure And Morphology ◽

Type Character ◽

Post Synthesis

The effects induced by post-synthesis hydrogenation on ZnFe2O4 flat films in terms of photoelectrochemical (PEC) performance of photoanodes for water oxidation have been deeply investigated as a function of the pre-annealing temperature of the materials. The structure and morphology of the films greatly affect the efficacy of the post synthesis treatment. In fact, highly compact films are obtained upon pre-annealing at high temperatures, and this limits the exposure of the material bulk to the reductive H2 atmosphere, making the treatment largely ineffective. On the other hand, a mild hydrogen treatment greatly enhances the separation of photoproduced charges in films pre-annealed at lower temperatures, as a result of the introduction of oxygen vacancies with n-type character. A comparison between present results and those obtained with ZnFe2O4 nanorods clearly demonstrates that specific structural and/or surface properties, together with the initial film morphology, differently affect the overall contribution of post-synthesis hydrogenation on the efficiency of zinc ferrite-based photoanodes.

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Nucleation of Disorder in Fe3Al Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100061574 ◽

1967 ◽

Vol 25 ◽

pp. 312-313

Author(s):

P. R. Swann ◽

W. R. Duff ◽

R. M. Fisher

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Annealing Temperature ◽

Antiphase Domain ◽

Effect Of Temperature ◽

Domain Structures ◽

Transmission Electron ◽

Domain Boundaries ◽

Higher Temperature ◽

The One

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.

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Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100087124 ◽

1991 ◽

Vol 49 ◽

pp. 562-563

Author(s):

F.-R. Chen ◽

T. L. Lee ◽

L. J. Chen

Keyword(s):

Crystal Structure ◽

Electron Microscopy ◽

Thin Films ◽

Diffraction Pattern ◽

Annealing Temperature ◽

Lattice Mismatch ◽

Si Substrate ◽

Metal Thin Films ◽

Transmission Electron ◽

Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

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Growth of near noble metal Pd and Pt thin film silicides morphology and structure

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100112464 ◽

1984 ◽

Vol 42 ◽

pp. 498-499

Author(s):

E. I. Alessandrini ◽

M. O. Aboelfotoh

Keyword(s):

Noble Metals ◽

Annealing Temperature ◽

Chemical Compounds ◽

Barrier Properties ◽

Solid State Reactions ◽

Transmission Electron ◽

Stable Chemical ◽

Metal Thickness ◽

Amorphous Si ◽

Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

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Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154998 ◽

1989 ◽

Vol 47 ◽

pp. 604-605

Author(s):

P. Roitman ◽

B. Cordts ◽

S. Visitserngtrakul ◽

S.J. Krause

Keyword(s):

High Temperature ◽

Annealing Temperature ◽

Silicon On Insulator ◽

High Dose ◽

High Temperature Annealing ◽

High Current ◽

Defect Reduction ◽

Annealing Step ◽

Multiple Cycle ◽

Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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