Incorporation of an efficient β-In2S3 thin film as window material into CdTe photovoltaic devices

ABSTRACTIn this paper, a quantum-kinetic equivalent of Shockley-Read-Hall recombination is derived within the non-equilibrium Green's function formalism for a photovoltaic system with selectively contacted extended-state absorbers and a localized deep defect state in the energy gap. The novel approach is tested on a homogeneous bulk absorber and then applied to a thin film photo-diode with large built-in field in the defect-rich absorber region. While the quantum-kinetic treatment reproduces the semi-classical characteristics for a bulk absorber in quasi-equilibrium conditions, for which the latter picture is valid, it reveals in the thin film case non-classical characteristics of recombination enhanced by tunneling into field-induced sub-gap states.

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CuxSbySz THIN FILMS PRODUCED BY ANNEALING CHEMICALLY DEPOSITED Sb2S3-CuS THIN FILMS

Modern Physics Letters B ◽

10.1142/s0217984901002257 ◽

2001 ◽

Vol 15 (17n19) ◽

pp. 667-670 ◽

Cited By ~ 17

Author(s):

Y. RODRÍGUEZ-LAZCANO ◽

M. T. S. NAIR ◽

P. K. NAIR

Keyword(s):

Thin Film ◽

Thin Films ◽

Optical Band Gap ◽

Deposition Method ◽

Photovoltaic Devices ◽

Large Area ◽

Electrical And Optical Properties ◽

Ternary Compounds ◽

Glass Substrates ◽

Different Temperatures

The possibility of generating ternary compounds through annealing thin film stacks of binary composition has been demonstrated before. In this work we report a method to produce large area coating of ternary compounds through a reaction in solid state between thin films of Sb2S3 and CuS. Thin films of Sb2S3 -CuS were deposited on glass substrates in the sequence of Sb2S3 followed by CuS (on Sb2S3 ) using chemical bath deposition method. The multilayer stack, thus produced, of approximately 0.5 μm in thickness, where annealed under nitrogen and argon atmospheres at different temperatures to produce films of ternary composition, CuxSbySz . An optical band gap of ~1.5 eV was observed in these films, suggesting that the thin films of ternary composition formed in this way are suitable for use as absorber materials in photovoltaic devices. The results on the analyses of structural, electrical and optical properties of films formed with different combinations of thickness in the multilayers will be discussed in the paper.

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New techniques for laser microprocessing of photovoltaic devices based on thin-film a-Si:H

Applied Surface Science ◽

10.1016/j.apsusc.2007.09.078 ◽

2007 ◽

Vol 254 (4) ◽

pp. 1115-1120 ◽

Cited By ~ 9

Author(s):

C. Molpeceres ◽

S. Lauzurica ◽

J.J. García-Ballesteros ◽

M. Morales ◽

S. Fernández-Robledo ◽

...

Keyword(s):

Thin Film ◽

Photovoltaic Devices ◽

New Techniques

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Current State: The Development of Thin Film Solar Cells Based on Kesteritee Compound

Journal Of Natural Sciences And Mathematics Research ◽

10.21580/jnsmr.2016.1.1.1641 ◽

2017 ◽

Vol 2 (1) ◽

pp. 99

Author(s):

Fianti Fianti ◽

Badrul Munir ◽

Kyoo Ho Kim ◽

Mohammad Ikhlasul Amal

Keyword(s):

Thin Film ◽

Solar Cell ◽

Thin Film Solar Cell ◽

Photovoltaic Devices ◽

Rare Element ◽

Solar Cell Application ◽

Current State ◽

Production Growth ◽

Fast Development ◽

Chalcopyrite Compound

<div style="text-align: justify;">Thin film solar cell experience fast development, especially for thin film solar cell CdTe and Cu(In,Ga)Se2 (CIGS). However, the usage of rare element in the nature such as In, Te, and Ga and toxic such as Cd give limitation in the future development and production growth in big scale. Development of other alternative compound with maintain the profit of electronic and optic character which get from CIGS chalcopyrite compound will be explain. Compound of Cu2ZnSnSe4 (CZTSe) is downward compound from CIGS with substitute the In and Ga element with Zn and Sn. The compound kesterite structure can be modified with variation of chalcogen element to get wanted character in solar cell application. Efficiency record of photovoltaic devices conversion used this compound or downward reach 9.7%.©2016 JNSMR UIN Walisongo. All rights reserved.</div>

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Two-dimensional GeSe for high performance thin-film solar cells

Journal of Materials Chemistry A ◽

10.1039/c8ta00129d ◽

2018 ◽

Vol 6 (12) ◽

pp. 5032-5039 ◽

Cited By ~ 33

Author(s):

Xingshuai Lv ◽

Wei Wei ◽

Cong Mu ◽

Baibiao Huang ◽

Ying Dai

Keyword(s):

Thin Film ◽

Solar Cells ◽

Schottky Barrier ◽

High Performance ◽

Thin Film Solar Cells ◽

Two Dimensional ◽

Photovoltaic Devices ◽

Promising Candidate

Multilayer GeSe can be a promising candidate for flexible photovoltaic devices because of the low Schottky barrier at the back electrode and high PCE of ∼18%.

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