scholarly journals Structure and optical properties of polycrystalline ZnSe thin films: validity of Swanepol’s approach for calculating the optical parameters

2020 ◽  
Vol 7 (1) ◽  
pp. 016422 ◽  
Author(s):  
M F Hasaneen ◽  
Z A Alrowaili ◽  
W S Mohamed
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optical Parameters ◽  
Znse Thin Films

The Optical Properties of ZnSe Thin Films in the Wavelength Range of 400-1500 nm.

1983 ◽  
Vol 12 (4) ◽  
pp. 137-139
Author(s):  
A. A. El-Shazly ◽  
M. K. Kenawi ◽  
H. T. El-Shair ◽  
M. M. El-Nahass ◽  
H. S. Soliman
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Wavelength Range ◽  
Znse Thin Films

scholarly journals Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 252 ◽  
Author(s):  
A. M. Alsaad ◽  
A. A. Ahmad ◽  
I. A. Qattan ◽  
Qais M. Al-Bataineh ◽  
Zaid Albataineh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical Parameters ◽  
Group Iii ◽  
Doped Zno

Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

scholarly journals Effect of composition on optical properties of GeSe3-Sb2Se3-ZnSe thin films

2014 ◽  
Vol 37 (6) ◽  
pp. 1255-1263 ◽  
Author(s):  
M. R. Balboul ◽  
H. M. Hosni ◽  
M. A. Soliman ◽  
S. A. Fayek
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Znse Thin Films

Effect of pH on the structural and optical properties of polycrystalline ZnSe thin films produced by CBD method

2019 ◽  
Vol 33 (05) ◽  
pp. 1950024 ◽  
Author(s):  
Fatma Meydaneri Tezel ◽  
İ. Afşin Kariper
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Room Temperature ◽  
Dielectric Constants ◽  
Structural And Optical Properties ◽  
Polycrystalline Structure ◽  
Density Values ◽  
Cbd Method ◽  
Znse Thin Films ◽  
Absorbance Spectra

In this study, zinc selenide (ZnSe) thin films were produced on glass substrate by using chemical bath deposition (CBD) method at 80[Formula: see text]C, from aqueous solutions of zinc sulphate and sodium selenosulphide, which were produced using solid selenium as the selenium source. The optical and structural properties of ZnSe thin films were investigated at room-temperature. The pH of the chemical bath, in which ZnSe thin films were immersed, were changed between pH:8–11. Optical properties of the films, including extinction coefficient, refractive index, reflectance, absorbance, transmittance, dielectric constants and optical density values were calculated using absorbance and transmittance measurements determined using a Hach Lange 500 spectrophotometer, in 300–1100 nm wavelength range. Optical bandgap values were obtained from transmittance and absorbance spectra ranged between 2.12 and 2.49 eV. According to XRD results, it was found that the films have polycrystalline structure and they exhibited different film thicknesses depending on phase and pH changes.

Investigation of optical parameters of thermally evaporated ZnSe thin films

2015 ◽  
Vol 12 (9-11) ◽  
pp. 1224-1228 ◽  
Author(s):  
H. H. Güllü ◽  
E. Coşkun ◽  
M. Parlak
Keyword(s):  
Thin Films ◽  
Optical Parameters ◽  
Znse Thin Films

INVESTIGATING ANNEALING EFFECT ON OPTICAL PROPERTIES OF Cd0.8Zn0.2S THIN FILMS

2014 ◽  
Vol 21 (05) ◽  
pp. 1450073 ◽  
Author(s):  
SOMAYEH AZIZI ◽  
HAMID REZAGHOLIPOUR DIZAJI ◽  
MOHAMMAD HOSSEIN EHSANI ◽  
SEYED FEYZOLAH GHAVAMI MIRMAHALLE
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Hexagonal Wurtzite Structure ◽  
Band Gap Energy ◽  
Annealing Effect ◽  
Thin Layers ◽  
Optical Parameters ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Cd 0.8 Zn 0.2 S thin films deposited on glass substrates by thermal evaporation method were annealed at different temperatures for the first time in order to investigate annealing effect on optical properties. The compositional, structural of nanoparticles precursor synthesized using microwave irradiation method and optical properties of the films were studied using energy dispersive X-ray (EDX), X-ray diffraction, transmission electron microscopy (TEM), and UV-visible spectrophotometer techniques. The annealed films were found to have hexagonal Wurtzite structure with strong preferential orientation along the (002) diffraction peak. Important optical parameters such as extinction coefficient and refractive index revealed the effect of heat treatment on the deposited thin layers. A reduction in the band gap energy from 2.41 eV to 2.29 eV was observed for the annealed samples.

Sign in / Sign up

Export Citation Format

Share Document