B23-O-14Direct observation the vacant sites in the GeSbTe metastable polycrystalline phase

Microscopy ◽  
2015 ◽  
Vol 64 (suppl 1) ◽  
pp. i59.2-i59
Author(s):  
Bin Zhang ◽  
Zhenju Shen ◽  
Yongjin Chen ◽  
Jixue Li ◽  
Wei Zhang ◽  
...  

Author(s):  
Bhasker Paliwal ◽  
Robert D. Moser ◽  
Christopher D. Barrett ◽  
Wilburn R. Whittington ◽  
Hongjoo Rhee ◽  
...  


2016 ◽  
Vol 852 ◽  
pp. 585-590
Author(s):  
Lin Sang ◽  
Ning Pan ◽  
Jing Su ◽  
Xiao Mei Tan ◽  
Hang Li ◽  
...  

3at. % Eu3+ doped (Y, Gd)2O3 precursor powders with various compositions were synthesized via a sol-gel process, and the precursors were sintered at different temperatures. XRD, FT-IR, Raman and photoluminescence spectroscopy were used to study the phase, microstructure and luminescent properties of the precursors and the sintered powders. The results show that pure (Y, Gd)2O3 polycrystalline phase can be obtained from sintering the precursors at 700°C. The influences of the host compositions on the microstructures and fluorescence properties were analyzed, and the optimized composition was obtained for 3at. % Eu3+ doped (Y, Gd)2O3 powders.



2020 ◽  
Vol 22 (41) ◽  
pp. 23563-23573 ◽  
Author(s):  
A. Macková ◽  
A. Jagerová ◽  
P. Malinský ◽  
M. Cutroneo ◽  
J. Flaks ◽  
...  

New polycrystalline phase has been created by 1 MeV Au ion implantation in non-polar ZnO facets and diminished after 10 MeV O-ion irradiation, hcp-Au nanoparticles of various sizes have been created in all ZnO facets.



CrystEngComm ◽  
2017 ◽  
Vol 19 (38) ◽  
pp. 5712-5715 ◽  
Author(s):  
Xianghe Meng ◽  
Wen Wang ◽  
Peifeng Zhang ◽  
Hua Ke ◽  
Jiancun Rao ◽  
...  

The synthesis of a Ca-modified (K,Na)NbO3 one-dimensional nanowire with a polycrystalline phase boundary and its investigation by convergent beam electron diffraction (CBED).



1977 ◽  
Vol 39 (1) ◽  
pp. 213-222 ◽  
Author(s):  
N. C. Halder ◽  
J. M. Montante ◽  
W. E. Swartz


1981 ◽  
Vol 25 ◽  
pp. 221-229
Author(s):  
W. Parrish ◽  
G. L. Ayers ◽  
T. C. Huang

AbstractThe operation of a new polycrystalline phase identification method using the IBM Series/1 minicomputer is described. Data of the unknown can be entered by automatic transfer of previous runs, stored data sets and manually. Full screen menu selections are provided to facilitate operations and correct entries. Typical S/M time for a multi-phase inorganic mixture containing 43 reflections using a 0.3° window averaged 11 sec per 100 standards and with simple chemical prescreening less than 4 sec including program initialization and calculations of comprehensive figures of merit. Interactive options provide graphics terminal comparison of the unknown pattern with selected standards which appear as diffractometer patterns, subtraction of identified standards from the unknown and others. Utility programs permit storing data sets for later analysis, user created files and a program to display any file standard as a diffractometer pattern.



2018 ◽  
Vol 60 (3) ◽  
pp. 499
Author(s):  
В.В. Антипов ◽  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
В.П. Рубец

AbstractAn epitaxial cubic 350-nm-thick cadmium selenide has been grown on silicon for the first time by the method of evaporation and condensation in a quasi-closed volume. It is revealed that, in this method, the optimum substrate temperature is 590°C, the evaporator temperature is 660°C, and the growth time is 2 s. To avoid silicon etching by selenium with formation of amorphous SiSe_2, a high-quality ~100-nm-thick buffer silicon carbide layer has been synthesized on the silicon surface by substituting atoms. The powder diffraction pattern and the Raman spectrum unambiguously correspond to cubic cadmium selenide crystal. The ellipsometric, Raman, and electron diffraction analyses demonstrate high structural perfection of the cadmium selenide layer and the absence of a polycrystalline phase.



Author(s):  
Bhasker Paliwal ◽  
Robert D. Moser ◽  
Christopher D. Barrett ◽  
Wilburn R. Whittington ◽  
Hongjoo Rhee ◽  
...  


2015 ◽  
Vol 821-823 ◽  
pp. 945-948 ◽  
Author(s):  
Irina S. Kotousova ◽  
Sergey P. Lebedev ◽  
Alexander A. Lebedev

The technique of reflection high-energy electron diffraction (RHEED) has been applied to study the graphene growth on conductive and semi-insulating 6H-SiC (0001) substrates using two RHEED devices. It was found the oriented growth of graphene on the conductive wafer and both oriented as disordered graphene growth on semi-insulating wafer due to the partial formation of polycrystalline component in nanocarbon film. It was shown that the appearance of the graphene polycrystalline phase was caused by the lower perfection structure of the surface of the semi-insulating substrate as compared to the conductive substrate.





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