scholarly journals Total secondary electron emission from a single crystal face of nickel

In an accompanying paper, secondary electron experiments on ordinary nickel are described. These were conducted mainly to study the conditions of secondary electron emission and to find how far the experimental results of Retry on a polycrystalline nickel target could be reproduced. It was found that a large number of inflections were obtained some of which coincided with Petry’s values. Most of these inflections had corresponding values in Thomas’s results for soft X-rays from nickel. In this paper, the results of experiments on total secondary electron emission from the 100 face of a nickel crystal are given.

The importance of secondary electron emission in its relation to the excitation of soft X-rays has been pointed out in a recent paper by Prof. O. W. Richardson. He has shown that at every potential where there is an increased excitation of soft X-rays, there is correspondingly an increase in the emission of secondary electrons, and has discussed at some length the mechanism of the generation of secondary electrons. It was therefore felt that a much clearer idea of the phenomenon of soft X-ray excitation from metallic surfaces could be had by studying the secondary electron emission from polycrystalline and single crystal faces. As early as in 1908 Richardson showed that slowly moving electrons are reflected in considerable proportion from metallic plates. Davisson and Kunsman, in a series of papers commencing from 1921, showed that at low voltages up to about 9 volts most of the secondary electrons were purely reflected electrons with velocities the same as the incident electrons. The percentage of the reflected electrons fell rapidly as the applied potential was increased above 9 volts, while that of low velocity electrons increased steadily. Farnsworth, with improved apparatus, added much valuable information regarding the generation of secondary electrons and the conditions operating in such cases. These observers showed that the total emission of secondary electrons from a metal surface depended on the applied potential, the nature of the surface and the previous heat treatment of the metal. They also found that the ratio of the secondary beam to the primary increases with applied potential and becomes greater than 1 after a certain potential, depending on the nature of the bombarded metal, is reached.


Author(s):  
Vladimir Yu. Sadovoy ◽  
Vladimir D. Blank ◽  
Sergey A. Terentiev ◽  
Dmitriy V. Teteruk ◽  
Sergey Yu. Troschiev

Dependence of secondary electron emission coefficient on the chosen crystallographic orientation for a synthetic single crystal diamond of type IIb, grown up by method of a temperature gradient, was investigated. The type IIb of single crystal diamond was chosen because of wide applicability in different areas of microelectronics and the semiconductor properties. Quantitative measurements of secondary electron emission coefficients with energy of primary beam about 7 keV and above for various crystallographic orientations was carried out: the highest coefficient of secondary electronic emission are recorded for the direction (100), cubic sector, and also in intergrowth area that is confirmed by a picture of distribution of the luminescence intensity for various sectors of a single crystal received by means of true secondary electrons detector of scanning electron microscope. The results for (100) area are outstanding: 8.18 at primary beam energy of 7 keV, 10.13 at 10 keV, 49.78 at 30 keV. The results for intergrowth area are similar: 10.10 at primary beam energy of 7 keV, 13.56 at 10 keV, 64.41 at 30 keV. The crystallographic directions (111) have shown secondary electron emission coefficient 4-6 times lower in comparison with (100) and intergrowth area: 2.54 on the average at primary beam energy of 7 keV, 2.75 at 10 keV, 10.03 at 30 keV. The non-standard behavior of secondary electron emission coefficient at the high energy primary beam for all orientations of single crystal diamond is shown: increase in secondary electron emission coefficient with increase in energy of primary beam. At the moment the reason of such behavior is not clear up to the end and since this fact causes a great interest of researchers, considerably expands applicability of the existing devices and detectors due to replacement of a functional element on diamond one, and also opens big opportunities for formation of new field of microelectronics, this facts demand further in-depth study by means of various methods of the structural and surface analysis.


The velocity distribution of the secondary electrons produced by bombarding a metallic face with a stream of primary electrons has been a matter of interest ever since the beginning of the study of secondary electron emission. As early as in 1908, Richardson and von Baeyer independently showed that slow moving electrons were copiously reflected from conducting faces. Farnsworth showed that for primary electrons having velocities less than 9 volts, most of the secondary electrons had velocities equal to the primary. As the primary potential was increased, the percentage of the reflected electrons decreased gradually but was appreciable at 110 volts. Davisson and Kunsman obtained reflected electrons even at primary potentials of 1000 and 1500 volts in the cases of some metal faces. At higher potentials we have also the electrons that undergo the Davisson and Germer scattering from the many crystal facets on the bombarded targets. As the potential is increased, the number of electrons with low velocities increases steadily and at large applied potentials, we have a large percentage of these in the secondary beam. These conclusions followed as a result of the work of Farnsworth who studied the distribution of velocities of the secondary electrons by the retarding potential method. He did not actually calculate the energy distribution from his curves but has drawn attention to the above conclusions. A careful investigation of the velocity distribution of the secondary electrons from various conducting faces was made by Rudberg at primary potentials ranging up to about 1000 volts. He adopted a magnetic deflection method similar to the one used in the analysis of the β rays and of the electrons excited by X-rays. The method had indeed been used by previous workers for the study of secondary emission, but Rudberg improved the technique considerably and obtained better focussing conditions. His results suggest that there are three groups of electrons in the secondary beam. The first group contains electrons returning with the same velocity as the primary. In the second group of electrons, we have those which undergo inelastic collisions with the orbital and structure electrons and hence are returned with some loss of energy. Richardson has drawn attention to the well-marked minimum between the two groups in Rudberg’s curves and infers that free electrons are not involved in the collisions. Finally there is the third group which contains the slow secondary electrons. The second and the third groups appear to be definitely connected with each other since they are both predominant at high primary potentials and become negligible at low primary potentials. Richardson suggests that the third group is the result of the excitation accompanying the inelastic collisions.


1993 ◽  
Vol 74 (12) ◽  
pp. 7506-7509 ◽  
Author(s):  
A. Gibrekhterman ◽  
A. Akkerman ◽  
A. Breskin ◽  
R. Chechik

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