Dynamical calculations for RHEED from MBE growing surfaces. II. Growth interruption and surface recovery

1991 ◽  
Vol 435 (1894) ◽  
pp. 257-267 ◽  
Keyword(s):  
Surface Roughness ◽  
Molecular Beam ◽  
High Energy ◽  
High Energy Electron ◽  
Intensity Oscillation ◽  
Recovery Curves ◽  
Quantitative Studies ◽  
Growth Interruption ◽  
Glancing Angle ◽  
Diffraction Condition

Detailed dynamical calculations for reflection high-energy electron diffraction (RHEED) from surfaces growing by molecular beam epitaxy have been made to investigate the technique of growth interruption and surface recovery kinetics. A birth-death growth model and a systematic reflection approximation to RHEED have been used. It is found that whilst the RHEED intensity oscillation behaviour is very sensitive to the incident glancing angle, the shape of the intensity recovery curve is insensitive to the diffraction condition. It is further shown that the RHEED intensity recovery curves bear a resemblance to the corresponding surface-roughness recovery curves. Sensible quantitative studies of recovery can therefore be made by analysing the RHEED intensity recovery curves. A similarity between the surface recovery and RHEED intensity recovery has been established.

Surfactant-Mediated Growth of Aigaas by Molecular Beam Epitaxy

1995 ◽  
Vol 379 ◽  
Author(s):  
Ron Kaspi ◽  
Keith R. Evans ◽  
Don C. Reynolds ◽  
Jeff Brown ◽  
Marek Skowronski
Keyword(s):  
Surface Roughness ◽  
Steady State ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Optical Quality ◽  
Growth Surface ◽  
High Energy Electron ◽  
Extended Reflection

ABSTRACTAntimony was used as a surfactant during solid-source molecular beam epitaxy of AIGaAs layers. A steady-state surface-segregated population of Sb was maintained at the AIGaAs growth surface by providing a continuous Sb2 flux to compensate for loss due to thermal desorption. Above ∼ 650 °C, the incorporation rate of Sb was negligible, thereby allowing the deposition of AlGaAs layers despite the presence of Sb at the surface. A significant improvement in the optical quality of Al0.24Ga0 76As layers was observed by photoluminescence. In addition, extended reflection high energy electron diffraction oscillations and a reduction in Al0.24Ga0.76As surface roughness was observed when Sb was employed as a surfactant.

An MBE and Modeling Study of Pulsed Growth on Ge(001)

2002 ◽  
Vol 749 ◽  
Author(s):  
M. A. Gallivan ◽  
H. A. Atwater
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Kinetic Monte Carlo ◽  
Processing Parameters ◽  
High Energy ◽  
Physical Parameters ◽  
Time Varying ◽  
High Energy Electron

ABSTRACTGe molecular beam epitaxy (MBE) and kinetic Monte Carlo (KMC) simulations are used to study time-varying processing parameters and their effect on surface morphology. We focus here on Ge growth on highly-oriented Ge(001) substrates with reflection high-energy electron diffraction (RHEED) as a real-time sensor. KMC simulations are used as the physical model, and physical parameters are determined from growth under pulsed flux. A reduced version of the simulations is generated, and temperature trajectories are computed that minimize surface roughness subject to experimental constraints.

Algorithms for determining the phase of RHEED oscillations

2015 ◽  
Vol 48 (6) ◽  
pp. 1927-1934 ◽  
Author(s):  
Zbigniew Mitura ◽  
Sergei L. Dudarev
Keyword(s):  
Experimental Data ◽  
Direct Method ◽  
Incident Beam ◽  
Diffraction Theory ◽  
High Energy ◽  
Angle Of Incidence ◽  
High Energy Electron ◽  
Dynamical Diffraction ◽  
Glancing Angle ◽  
Low Symmetry

Oscillations of reflection high-energy electron diffraction (RHEED) intensities are computed using dynamical diffraction theory. The phase of the oscillations is determined using two different approaches. In the first, direct, approach, the phase is determined by identifying the time needed to reach the second oscillation minimum. In the second approach, the phase is found using harmonic analysis. The two approaches are tested by applying them to oscillations simulated using dynamical diffraction theory. The phase of RHEED oscillations observed experimentally is also analysed. Experimental data on the variation of the phase as a function of the glancing angle of incidence, derived using the direct method, are compared with the values computed using both the direct and harmonic methods. For incident-beam azimuths corresponding to low-symmetry directions, both approaches produce similar results.

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