scholarly journals Impact of Layer Alignment on the Behavior of MoS2−ZrS2 Tunnel Field-Effect Transistors: An Ab Initio Study

2017 ◽  
Vol 8 (3) ◽  
Author(s):  
Anh Khoa Augustin Lu ◽  
Michel Houssa ◽  
Mathieu Luisier ◽  
Geoffrey Pourtois
2014 ◽  
Vol 26 (32) ◽  
pp. 5639-5645 ◽  
Author(s):  
Satria Zulkarnaen Bisri ◽  
Elena Degoli ◽  
Nicola Spallanzani ◽  
Gopi Krishnan ◽  
Bart Jan Kooi ◽  
...  

2017 ◽  
Vol 19 (30) ◽  
pp. 20121-20126 ◽  
Author(s):  
Juan Lu ◽  
Zhi-Qiang Fan ◽  
Jian Gong ◽  
Xiang-Wei Jiang

The device performances of both n-type and p-type tunnel field-effect transistors (TFETs) made of single-layer InX (X = N, P, As, Sb) are theoretically evaluated through density functional theory (DFT) and ab initio simulations in this paper.


ACS Nano ◽  
2020 ◽  
Vol 14 (7) ◽  
pp. 8605-8615 ◽  
Author(s):  
Cedric Klinkert ◽  
Áron Szabó ◽  
Christian Stieger ◽  
Davide Campi ◽  
Nicola Marzari ◽  
...  

2006 ◽  
Vol 89 (24) ◽  
pp. 243110 ◽  
Author(s):  
Dongchul Sung ◽  
Suklyun Hong ◽  
Yong-Hoon Kim ◽  
Noejung Park ◽  
Sanghyeob Kim ◽  
...  

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