Impact of Layer Alignment on the Behavior of
MoS2−ZrS2
Tunnel Field-Effect Transistors: An
Ab Initio
Study
2019 ◽
Vol 45
(7)
◽
pp. 9339-9347
◽
Keyword(s):
Keyword(s):
2010 ◽
Vol 114
(37)
◽
pp. 15816-15822
◽
2010 ◽
Vol 150
(5-6)
◽
pp. 258-261
◽
Keyword(s):
2017 ◽
Vol 19
(30)
◽
pp. 20121-20126
◽
Keyword(s):