Anisotropic Dirac cone and slow edge states in a photonic Floquet lattice

2022 ◽  
Vol 105 (1) ◽  
Author(s):  
Yuan Li ◽  
Xiankai Sun
Keyword(s):  
Edge States ◽  
Dirac Cone

scholarly journals Subwavelength Acoustic Valley-Hall Topological Insulators Using Soda Cans Honeycomb Lattices

Research ◽  
2019 ◽  
Vol 2019 ◽  
pp. 1-8 ◽  
Author(s):  
Zhiwang Zhang ◽  
Ye Gu ◽  
Houyou Long ◽  
Ying Cheng ◽  
Xiaojun Liu ◽  
...  
Keyword(s):  
Phase Transition ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Honeycomb Lattice ◽  
Inversion Symmetry ◽  
Edge States ◽  
Dual Frequency ◽  
Dirac Cone ◽  
First Order ◽  
Scale Size

Topological valley-contrasting physics has attracted great attention in exploring the use of the valley degree of freedom as a promising carrier of information. Recently, this concept has been extended to acoustic systems to obtain nonbackscattering sound propagations. However, previous demonstrations are limited by the cut-off frequency of 2D waveguides and lattice-scale size restrictions since the topological edge states originate from Bragg interference. Here we engineer topologically valley-projected edge states in the form of spoof surface acoustic waves that confine along the surface of a subwavelength honeycomb lattice composed of 330-mL soda cans. The inversion symmetry is broken through injecting a certain amount of water into one of the two cans in each unit cell, which gaps the Dirac cone and ultimately leads to the topological valley-Hall phase transition. Dual-frequency ranges of the valley-projected edge states below the sound line are observed, which originate from the first-order and second-order resonances, respectively. These results have the potential to enable promising routes to design integrated acoustic devices based on valley-contrasting physics.

2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors

2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Industry ◽  
Honeycomb Lattice ◽  
Theoretical Studies ◽  
Fabrication Technology ◽  
Dirac Cone ◽  
Free Standing ◽  
Silicene Nanoribbons ◽  
Effect Transistor

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.

scholarly journals Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Atomically Sharp Topological Non-Trivial Edge States

ACS Nano ◽  
2021 ◽  
Author(s):  
Jincheng Zhuang ◽  
Jin Li ◽  
Yundan Liu ◽  
Dan Mu ◽  
Ming Yang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Edge States ◽  
One Dimensional

scholarly journals Group Velocity Modulation and Light Field Focusing of the Edge States in Chirped Valley Graphene Plasmonic Metamaterials

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1808
Author(s):  
Liqiang Zhuo ◽  
Huiru He ◽  
Ruimin Huang ◽  
Shaojian Su ◽  
Zhili Lin ◽  
...  
Keyword(s):  
Group Velocity ◽  
Light Field ◽  
Slow Light ◽  
Dielectric Materials ◽  
Degree Of Freedom ◽  
Geometrical Parameters ◽  
Edge States ◽  
Velocity Modulation ◽  
Plasmonic Metamaterials ◽  
On Chip

The valley degree of freedom, like the spin degree of freedom in spintronics, is regarded as a new information carrier, promoting the emerging valley photonics. Although there exist topologically protected valley edge states which are immune to optical backscattering caused by defects and sharp edges at the inverse valley Hall phase interfaces composed of ordinary optical dielectric materials, the dispersion and the frequency range of the edge states cannot be tuned once the geometrical parameters of the materials are determined. In this paper, we propose a chirped valley graphene plasmonic metamaterial waveguide composed of the valley graphene plasmonic metamaterials (VGPMs) with regularly varying chemical potentials while keeping the geometrical parameters constant. Due to the excellent tunability of graphene, the proposed waveguide supports group velocity modulation and zero group velocity of the edge states, where the light field of different frequencies focuses at different specific locations. The proposed structures may find significant applications in the fields of slow light, micro–nano-optics, topological plasmonics, and on-chip light manipulation.

Theoretical realization of two-dimensional Dirac/Weyl line-node and traversing edge states in penta-X2Y monolayers

2021 ◽  
Vol 23 ◽  
pp. 101057
Author(s):  
Lirong Wang ◽  
Lei Jin ◽  
Guodong Liu ◽  
Ying Liu ◽  
Xuefang Dai ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Edge States ◽  
Line Node

scholarly journals Stability of topological edge states under strong nonlinear effects

2021 ◽  
Vol 103 (2) ◽  
Author(s):  
Rajesh Chaunsali ◽  
Haitao Xu ◽  
Jinkyu Yang ◽  
Panayotis G. Kevrekidis ◽  
Georgios Theocharis
Keyword(s):  
Nonlinear Effects ◽  
Edge States

scholarly journals Topological phase transition between a normal insulator and a topological metal state in a quasi-one-dimensional system

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Milad Jangjan ◽  
Mir Vahid Hosseini
Keyword(s):  
Phase Transition ◽  
Dimensional System ◽  
Inversion Symmetry ◽  
Topological Phase ◽  
Edge States ◽  
Zero Energy ◽  
One Dimensional ◽  
Topological Phase Transition ◽  
Metal State ◽  
Topological Metal

AbstractWe theoretically report the finding of a new kind of topological phase transition between a normal insulator and a topological metal state where the closing-reopening of bandgap is accompanied by passing the Fermi level through an additional band. The resulting nontrivial topological metal phase is characterized by stable zero-energy localized edge states that exist within the full gapless bulk states. Such states living on a quasi-one-dimensional system with three sublattices per unit cell are protected by hidden inversion symmetry. While other required symmetries such as chiral, particle-hole, or full inversion symmetry are absent in the system.

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