Photoluminescence quenching in reverse-biasedAlxGa1−xAs/GaAs quantum-well heterostructures due to carrier tunneling

1985 ◽  
Vol 31 (12) ◽  
pp. 7859-7864 ◽  
Author(s):  
Y. Horikoshi ◽  
A. Fischer ◽  
K. Ploog
Keyword(s):  
Quantum Well ◽  
Photoluminescence Quenching ◽  
Carrier Tunneling

scholarly journals Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1092
Author(s):  
Yudan Gou ◽  
Jun Wang ◽  
Yang Cheng ◽  
Yintao Guo ◽  
Xiao Xiao ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
High Efficiency ◽  
Tunnel Junctions ◽  
Peak Current Density ◽  
Co Doping ◽  
Trap Assisted Tunneling ◽  
Carrier Tunneling ◽  
High Concentrations ◽  
Ingaas Quantum Well

The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p++-GaAs/n++-GaAs tunnel junctions and report a peak current density as high as 5839 A cm−2 with a series resistance of 5.86 × 10−5 Ω cm2. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.

Carrier tunneling in a novel asymmetric quantum well structure

1999 ◽  
Vol 112 (5) ◽  
pp. 291-294 ◽  
Author(s):  
Guangyou Yu ◽  
X.W Fan ◽  
J Zhang ◽  
D Shen
Keyword(s):  
Quantum Well ◽  
Quantum Well Structure ◽  
Asymmetric Quantum ◽  
Carrier Tunneling

Room temperature free carrier tunneling in dilute nitride based quantum well - quantum dot tunnel injection system for 1.3 μm

2009 ◽  
Vol 94 (17) ◽  
pp. 171906 ◽  
Author(s):  
W. Rudno-Rudziński ◽  
G. Sęk ◽  
K. Ryczko ◽  
M. Syperek ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Room Temperature ◽  
Free Carrier ◽  
Injection System ◽  
Dilute Nitride ◽  
Carrier Tunneling ◽  
Tunnel Injection

Carrier tunneling in complex asymmetrical multiple-quantum-well semiconductor optical amplifiers

2006 ◽  
Vol 18 (12) ◽  
pp. 1362-1364 ◽  
Author(s):  
V.V. Lysak ◽  
I.A. Sukhoivanov ◽  
O.V. Shulika ◽  
I.M. Safonov ◽  
Y.T. Lee
Keyword(s):  
Quantum Well ◽  
Optical Amplifiers ◽  
Multiple Quantum Well ◽  
Semiconductor Optical Amplifiers ◽  
Multiple Quantum ◽  
Carrier Tunneling

Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector

2010 ◽  
Vol 96 (15) ◽  
pp. 151104 ◽  
Author(s):  
C. Y. Jin ◽  
S. Ohta ◽  
M. Hopkinson ◽  
O. Kojima ◽  
T. Kita ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Temperature Dependent ◽  
Carrier Tunneling ◽  
Self Assembled

Saturation of photoluminescence quenching under below-gap excitation in a GaAs/AlGaAs quantum well

1995 ◽  
Vol 63 (5-6) ◽  
pp. 235-240 ◽  
Author(s):  
E. Kanoh ◽  
K. Hoshino ◽  
N. Kamata ◽  
K. Yamada ◽  
M. Nishioka ◽  
...  
Keyword(s):  
Quantum Well ◽  
Photoluminescence Quenching
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