Investigation of surface defects on Ni(110) with a low-energy positron beam

1987 ◽  
Vol 35 (3) ◽  
pp. 1034-1038 ◽  
Author(s):  
A. R. Köymen ◽  
D. W. Gidley ◽  
T. W. Capehart
2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Tamar Goldzak ◽  
Alexandra R. McIsaac ◽  
Troy Van Voorhis

AbstractColloidal CdSe nanocrystals (NCs) have shown promise in applications ranging from LED displays to medical imaging. Their unique photophysics depend sensitively on the presence or absence of surface defects. Using simulations, we show that CdSe NCs are inherently defective; even for stoichiometric NCs with perfect ligand passivation and no vacancies or defects, we still observe that the low energy spectrum is dominated by dark, surface-associated excitations, which are more numerous in larger NCs. Surface structure analysis shows that the majority of these states involve holes that are localized on two-coordinate Se atoms. As chalcogenide atoms are not passivated by any Lewis base ligand, varying the ligand should not dramatically change the number of dark states, which we confirm by simulating three passivation schemes. Our results have significant implications for understanding CdSe NC photophysics, and suggest that photochemistry and short-range photoinduced charge transfer should be much more facile than previously anticipated.


1994 ◽  
Vol 26 (2-3) ◽  
pp. 163-166 ◽  
Author(s):  
Huimin Weng ◽  
Dazhi Wang ◽  
Rongdian Han ◽  
Yi Jiang ◽  
Genqing Yang ◽  
...  
Keyword(s):  

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.


1999 ◽  
Vol 68 (6) ◽  
pp. 643-645 ◽  
Author(s):  
C.E. Gonzalez ◽  
S.C. Sharma ◽  
N. Hozhabri ◽  
D.Z. Chi ◽  
S. Ashok

2017 ◽  
Vol 791 ◽  
pp. 012030 ◽  
Author(s):  
A J Fairchild ◽  
V A Chirayath ◽  
R W Gladen ◽  
M D Chrysler ◽  
A R Koymen ◽  
...  

1989 ◽  
Vol 159 ◽  
Author(s):  
E. Bauer ◽  
M. Mundschau ◽  
W. Swiech ◽  
W. Telieps

ABSTRACTLow energy electron microscopy (LEEM) is briefly introduced and its application to the study of surface defects, surface phase transitions on Si(111), crystal growth and sublimation on Si(100) is illustrated.


1998 ◽  
Vol 58 (7) ◽  
pp. 4143-4148 ◽  
Author(s):  
R. Souda ◽  
T. Suzuki ◽  
H. Kawanowa ◽  
E. Asari

Author(s):  
M. Horn-von Hoegen

AbstractThe universal capabilities of high resolution spot profile analysis low energy electron diffraction for in situ studies of surface morphology and surface defects will be discussed and demonstrated. The position of the diffraction spots is used to determine lateral lattice constants, step heights and the strain state of heterosystems with a precision of 0.02 Å. With the knowledge of the spot profile we could determine island and domain size distributions – even during deposition – and correlation functions of arbitrary surface defects. The variation of the spot profile with electron energy allows the evaluation of the 3dim. reciprocal space. With this the power spectrum of surface roughness, facet orientation, or step morphology of flat and vicinal surfaces could be completely characterised.


1974 ◽  
Vol 45 (7) ◽  
pp. 951-953 ◽  
Author(s):  
T. S. Stein ◽  
W. E. Kauppila ◽  
L. O. Roellig
Keyword(s):  

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