Atomic mixing and interface reactions in Ta/Si bilayers during noble-gas ion irradiation

2001 ◽  
Vol 65 (2) ◽  
Author(s):  
S. Dhar ◽  
M. Milosavljevic ◽  
N. Bibic ◽  
K. P. Lieb
Keyword(s):  
Ion Irradiation ◽  
Noble Gas ◽  
Interface Reactions ◽  
Atomic Mixing

Atomic Mixing Induced by Ion Irradiation of V/Cu Multilayers

2020 ◽  
Vol 37 (3) ◽  
pp. 036101
Author(s):  
Yan-Bin Sheng ◽  
Hong-Peng Zhang ◽  
Tie-Long Shen ◽  
Kong-Fang Wei ◽  
Long Kang ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Atomic Mixing

scholarly journals In Situ Ion Beam Research In Argonne's Intermediate Voltage Electron Microscope

1996 ◽  
Vol 439 ◽  
Author(s):  
Charles W. Allen ◽  
Edward A. Ryan
Keyword(s):  
Electron Microscope ◽  
Ion Irradiation ◽  
Noble Gas ◽  
Ion Beam ◽  
Voltage Electron ◽  
In Situ Experiments ◽  
User Facility ◽  
New Instrumentation ◽  
Electron Microscopes

AbstractSince Fall 1995, a state-of-the-art intermediate voltage electron microscope (IVEM) has been operational in the HVEM-Tandem Facility with in situ ion irradiation capabilities similar to those of the HVEM of the Facility. A 300 kV Hitachi H-9000NAR is interfaced to the two ion accelerators of the Facility, with a demonstrated point-topoint spatial resolution for imaging of 0.25 nm with the ion beamline attached to the microscope. The IVEM incorporates a Faraday cup system for ion dosimetry with measurement aperture 6.5 cm from the TEM specimen, which was described in Symposium A of the 1995 MRS Fall Meeting. The IVEM is now employed for a variety of in situ ion beam studies ranging from low dose ion damage experiments with GaAs, in which damage zones individual displacement cascades are observed, to implantation studies in metals, in which irradiation-induced noble gas precipitate mobility is studied in real time. In this presentation, the new instrumentation and its specifications will be described briefly, several basic concepts relating to in situ experiments in transmission electron microscopes will be summarized and examples of in situ experiments will be presented which exploit the experimental capabilities of this new user facility instrumentation.

Ion-beam mixing of Ni/Pd layers: II. Thermally assisted regime (>500K)

1988 ◽  
Vol 3 (6) ◽  
pp. 1063-1071 ◽  
Author(s):  
U. G. Akano ◽  
D. A. Thompson ◽  
W. W. Smeltzer ◽  
J. A. Davies
Keyword(s):  
Grain Boundary ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Effective Diffusivity ◽  
Bilayer Films ◽  
Diffusion Analysis ◽  
The Mean ◽  
Atomic Mixing ◽  
Lattice Diffusivity

Atomic mixing in Ni/Pd bilayer films due to 120 keV Ar+ irradiation in the thermally assisted regime (523−673 K) has been measured, in situ, using Rutherford backscattering with 2.0 MeV 4He+ ions. The mean diameter of grains in these polycrystallinc films increased from 10 to 60 nm, following Ar+ bombardment at 573 K. Initial mixing was rapid due to grain boundary diffusion and incorporation of the metal solute into the solvent metal matrix by grain growth; this mixing stage was essentially complete within 10 min for annealed films or after an Ar+ dose of 4 × 1015 cm−2 in irradiated films (10 min irradiation). No further measurable mixing occurred in the annealed, unirradiated films. For the irradiated samples the initial rapid mixing (6−35 atoms/ion) was followed by a slower mixing stage of 0.7–1.8 atoms/ion for irradiation doses of up to 2.5 × 1016 Ar+ cm−2. The Ar+ bombardment gave rise to much smaller mixing levels when the Pd films were deposited on large-grain or single-crystal Ni. A diffusion analysis demonstrates that the effective diffusivity, Deff, for ion-irradiation-enhanced mixing in the thermally assisted regime satisfied the relation Dl < Deff < DB, where the ratio of the grain boundary to lattice diffusivity was DB/Dl > 106.

scholarly journals Hole doping effect of MoS2 via electron capture of He+ ion irradiation

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sang Wook Han ◽  
Won Seok Yun ◽  
Hyesun Kim ◽  
Yanghee Kim ◽  
D.-H. Kim ◽  
...  
Keyword(s):  
Electron Capture ◽  
Ion Irradiation ◽  
Noble Gas ◽  
Transition Metal Dichalcogenides ◽  
General Purpose ◽  
Low Energy ◽  
Hole Doping ◽  
Universal Method ◽  
Metal Dichalcogenides ◽  
P Type

AbstractBeyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He+ ion irradiation: converting n-type MoS2 to p-type by electron capture through the migration of the topmost S atoms. The electron capture ability via He+ ion irradiation is valid for supported bilayer MoS2; however, it is limited at supported monolayer MoS2 because the charges on the underlying substrates transfer into the monolayer under the current condition for He+ ion irradiation. Our technique provides a stable and universal method for converting n-type 2D transition metal dichalcogenides (TMDs) into p-type semiconductors in a controlled fashion using low-energy He+ ion irradiation.

Local Modification of Microstructure and of Properties by FIB-CVD

2003 ◽  
Vol 792 ◽  
Author(s):  
H. Wanzenboeck ◽  
S. Harasek ◽  
H. Langfischer ◽  
B. Basnar ◽  
W. Brezna ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Beam Diameter ◽  
Energetic Ions ◽  
Microstructure Fabrication ◽  
Processed Material ◽  
Versatile Tool ◽  
Local Modification ◽  
Atomic Mixing

ABSTRACTThe focused ion beam has been acknowledged as a versatile tool for local sputtering as well as local deposition of material. A beam diameter below 10 nm is feasible and renders FIB a powerful tool for microstructure fabrication and generation. This experimental study investigates the geometrical limitations of FIB processing as well as the implications on the processed material. The high energetic ions of the primary beam also change the properties of the processed material due to implantation and atomic mixing. The incorporation of Ga from the FIB may be beneficial in the case of deliberate implantation or unfavorable as a chemical impurity. Higher doses of ion irradiation caused amorphisation of the material. The effects of FIB processing on the substrates as well as deposited structures are illustrated.

Surface Damage During Kev Ion Irradiation: Results of Computer Simulations

1995 ◽  
Vol 388 ◽  
Author(s):  
R.S. Averback ◽  
Mai Ghaly ◽  
Huilong Zhu
Keyword(s):  
Energy Deposition ◽  
Ion Irradiation ◽  
Surface Damage ◽  
Md Simulations ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Individual Ion ◽  
Atomic Mixing ◽  
Damage Processes ◽  
Explosive Event

AbstractMD simulations have been employed to investigate damage processes near surfaces during keV bombardment of metal targets. For self-ion implantation of au, Cu, and Pt in the range of 5-20 keV, we have found that the proximity of the surface leads to significantly more damage and atomic mixing in comparison to recoil events occurring in the crystal interior. IN some cases, large craters are formed in a micro-explosive event, while in others a convective flow of atoms to the surface creates adatoms and leaves dislocations behind. Both the amount damage created in the surface and its morphology depend sensitively on the details of the energy deposition along individual ion trajectories. the results of these simulations will be summarized and compared to recent scanning tunneling microscopy studies of individual ion impacts in Pt and Ge.

Defect dynamics in two-dimensional black phosphorus under argon ion irradiation

Nanoscale ◽  
2021 ◽  
Author(s):  
Saransh Gupta ◽  
Prakash Periasamy ◽  
Badri Narayanan
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Ion Irradiation ◽  
Noble Gas ◽  
Black Phosphorus ◽  
Two Dimensional ◽  
Classical Molecular Dynamics ◽  
Dynamics Simulations ◽  
Argon Ion

Classical molecular dynamics simulations show that production, accumulation, and evolution of defects in monolayer phosphorene can be precisely controlled by varying fluence of noble gas ion radiation.

Defect Production Mechanisms During keV Ion Irradiation: Results of Computer Simulations

1994 ◽  
Vol 373 ◽  
Author(s):  
R.S. Averback ◽  
Mai Ghaly ◽  
Huilong Zhu
Keyword(s):  
Computer Simulations ◽  
Convective Flow ◽  
Energy Deposition ◽  
Ion Irradiation ◽  
Md Simulations ◽  
Defect Production ◽  
Atomic Mixing ◽  
Damage Processes ◽  
Production Mechanisms ◽  
Explosive Event

AbstractMD simulations have been employed to investigate damage processes during keV bombardment of metal targets. For self-ion irradiations of Au, Cu, and Pt in the range of 5-20 keV, we have found that both the amount and the character of the damage created in the surface depends sensitively on the details of the energy deposition along individual ion trajectories. In all of these cases, significantly more damage is produced and more atomic mixing takes place relative to corresponding recoil events in the crystal interior. In some cases, enormous craters are formed in an explosive event, while in others a convective flow of atoms to the surface leaves dislocations behind. The results of these simulations will be summarized and their significance for damage studies of ion irradiated materials, discussed.

The HVEM-tandem user facility at Argonne National Laboratory

1988 ◽  
Vol 46 ◽  
pp. 806-807
Author(s):  
C. W. Allen ◽  
E. A. Ryan ◽  
S. T. Ockers
Keyword(s):  
Radiation Effects ◽  
Ion Irradiation ◽  
Noble Gas ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Western Hemisphere ◽  
Accelerator Facility ◽  
Wide Range ◽  
In Situ Experiments

Established in 1981, the High Voltage Electron Microscope-Tandem Ion Accelerator Facility (HVEM-Tandem) is a user-oriented resource for materials research. It is located at Argonne National Laboratory about 20 miles south of O'Hare International Airport near Chicago. The Facility consists of a modified Kratos/AEI HVEM with accelerating voltages ranging continuously from 0.1-1.2 MeV, interfaced to a 2 MV tandem and a 0.65 MV ion implanter-type accelerator. This combination of instruments offers capability, unique in the western hemisphere, for a wide range of in Situ experiments involving ion irradiation and ion implantation with simultaneous microscopy. During 1987 approximately 75% of microscope time was devoted to this type of experiment (Fig. 1) including studies of solid state phase transformations, such as amorphization, radiation damage and defect structures and the implantation of noble gas and metal ions.In situ experiments of various types account for nearly 90% of usage of the HVEM. In addition to the radiation effects studies, this includes experiments performed in the microscope involving deformation, annealing and environmental effects.

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