Concentration and relaxation depth profiles of InxGa1−xAs/GaAs and GaAs1−xPx/GaAs graded epitaxial films studied by x-ray diffraction

AbstractAn electrode plays an important role in realising a ferroelectric thin film as a potential memory device. We have investigated LaNiO3 (LNO) as a potential electrode material and evaluated the ferroelectric properties of oxide materials like strontium bismuth tantalate (SBT) and barium titanate(BT). We have successfully deposited epitaxial films of LNO on Pt coated Si(100) and LaAlO3 (LAO) substrates using the pulsed excimer laser deposition technique. We are able to grow high quality SBT and BT films on top of this LNO layer. The X-ray diffraction revealed the epitaxy of the LNO, SBT and BT films. The ferroelectric properties of SBTand BT were investigated using the RT66A ferroelectric tester.

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Development of a Numerical Procedure for Determining the Depth Profiles of X-ray Diffraction Data

Advances in X-Ray Analysis ◽

10.1007/978-1-4615-2528-8_26 ◽

1994 ◽

pp. 197-203 ◽

Cited By ~ 4

Author(s):

Xiaojing Zhu ◽

Paul Predecki

Keyword(s):

Diffraction Data ◽

Numerical Procedure ◽

X Ray Diffraction ◽

X Ray ◽

Depth Profiles

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The dislocation density of GaN LED epitaxial films grown on Si substrates characterized by X - ray diffraction

10.1109/icisce50968.2020.00490 ◽

2020 ◽

Author(s):

Cuiyun Li ◽

Lancheng Xu

Keyword(s):

Dislocation Density ◽

Epitaxial Films ◽

X Ray Diffraction ◽

X Ray ◽

Si Substrates ◽

Gan Led

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Copper(I) Halide Nanoparticle-dispersed Glasses Prepared by Copper Staining

Journal of Materials Research ◽

10.1557/jmr.2005.0295 ◽

2005 ◽

Vol 20 (9) ◽

pp. 2480-2485 ◽

Cited By ~ 4

Author(s):

Kohei Kadono ◽

Tatsuya Suetsugu ◽

Takeshi Ohtani ◽

Toshihiko Einishi ◽

Takashi Tarumi ◽

...

Keyword(s):

Electron Microscopy ◽

Heat Treatment ◽

Surface Region ◽

Borosilicate Glasses ◽

X Ray Diffraction ◽

X Ray ◽

Depth Profiles ◽

Transmission Electron ◽

Heat Treated ◽

Glass Heat

Copper(I) chloride and bromide nanoparticle-dispersed glasses were prepared by means of a conventional copper staining. The staining was performed by the following process: copper stain was applied on the surfaces of Cl−- or Br−-ion-containing borosilicate glasses, and the glasses were heat-treated at 510 °C for various times. Typical exciton bands observed in the absorption spectra of the glasses after the heat treatment indicated that CuCl and CuBr particles were formed in the surface region of the glasses. The average sizes of the CuCl and CuBr particles in the glasses heat-treated for 48 h were estimated at 4.8 and 2.7 nm, respectively. The nanoparticles were also characterized by x-ray diffraction and transmission electron microscopy. Depth profiles of Cu and CuBr concentration in the glass heat-treated for 48 h were measured. Copper decreased in concentration monotonously with depth, reaching up to 60 μm, while the CuBr concentration had a maximum at about 25 μm in depth.

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Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X-ray diffraction analyses

physica status solidi (b) ◽

10.1002/pssb.200674812 ◽

2007 ◽

Vol 244 (6) ◽

pp. 1775-1779 ◽

Cited By ~ 2

Author(s):

Katsuhiko Inaba ◽

Hiroshi Amano

Keyword(s):

Epitaxial Films ◽

X Ray Diffraction ◽

X Ray ◽

Nonpolar Gan

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ScAlMgO4: an Oxide Substrate for GaN Epitaxy

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300001733 ◽

1996 ◽

Vol 1 ◽

Cited By ~ 30

Author(s):

E. S. Hellman ◽

C. D. Brandle ◽

L. F. Schneemeyer ◽

D. Wiesmann ◽

I. Brener ◽

...

Keyword(s):

Molecular Beam ◽

Nitrogen Plasma ◽

Epitaxial Films ◽

Czochralski Growth ◽

Congruent Melting ◽

X Ray Diffraction ◽

High Quality ◽

X Ray ◽

Oxide Substrate ◽

Deposition Conditions

We report the use of ScAlMgO4 as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO4 makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17mm in diameter are reported. We have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO4 substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3×3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. We also report thermal expansion measurements for ScAlMgO4.

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Growth of Epitaxial a-Axis and c-Axis Oriented Sr2RuO4 Films

MRS Proceedings ◽

10.1557/proc-401-435 ◽

1995 ◽

Vol 401 ◽

Author(s):

S. Madhavan ◽

B. J. Gibbons ◽

A. Dabkowski ◽

H. A. Dabkowska ◽

S. Trolier-Mckinstry ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Epitaxial Films ◽

Temperature Measurements ◽

Laser Deposition ◽

Metallic Films ◽

X Ray Diffraction ◽

X Ray ◽

Oriented Films

AbstractEpitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray ø-scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic. The metallic films grown so far were found to be non-superconducting down to 50 mK.

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Analysis of the Strain Profile in Thin Au/Ni Multilayers by X-Ray Diffraction

MRS Proceedings ◽

10.1557/proc-208-211 ◽

1990 ◽

Vol 208 ◽

Cited By ~ 1

Author(s):

J. Chaudhuri ◽

V. Gondhalekar ◽

A. F. Jankowski

Keyword(s):

Diffraction Pattern ◽

Diffraction Theory ◽

Metallic Multilayers ◽

X Ray Diffraction ◽

Strain Profile ◽

X Ray ◽

Depth Profiles

ABSTRACTA dynamical x-ray diffraction theory has been used to obtain microscopic strain profiles in thin Au/Ni multilayers. Depth profiles of strains in these multilayers, with repeat periodicities varying from 0.82 nm to 9.0 nm, are obtained by an iterative fitting of the calculated diffraction pattern with the experimental one. Interfacial coherency is found to play an important role in understanding the origin of the supermodulus effect in metallic multilayers.

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