Influence of LaNiO3 as an Electrode on the Properties of Ferroelectric Oxides

2000 ◽  
Vol 623 ◽  
Author(s):  
R. Kalare ◽  
M. Vedawyas ◽  
A. Kumar
Keyword(s):  
Ferroelectric Properties ◽  
Ferroelectric Thin Film ◽  
Memory Device ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
Oxide Materials ◽  
X Ray Diffraction ◽  
X Ray ◽  
Potential Electrode ◽  
Ferroelectric Oxides

AbstractAn electrode plays an important role in realising a ferroelectric thin film as a potential memory device. We have investigated LaNiO3 (LNO) as a potential electrode material and evaluated the ferroelectric properties of oxide materials like strontium bismuth tantalate (SBT) and barium titanate(BT). We have successfully deposited epitaxial films of LNO on Pt coated Si(100) and LaAlO3 (LAO) substrates using the pulsed excimer laser deposition technique. We are able to grow high quality SBT and BT films on top of this LNO layer. The X-ray diffraction revealed the epitaxy of the LNO, SBT and BT films. The ferroelectric properties of SBTand BT were investigated using the RT66A ferroelectric tester.

Growth of Epitaxial a-Axis and c-Axis Oriented Sr2RuO4 Films

1995 ◽  
Vol 401 ◽  
Author(s):  
S. Madhavan ◽  
B. J. Gibbons ◽  
A. Dabkowski ◽  
H. A. Dabkowska ◽  
S. Trolier-Mckinstry ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Temperature Measurements ◽  
Laser Deposition ◽  
Metallic Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oriented Films

AbstractEpitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray ø-scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic. The metallic films grown so far were found to be non-superconducting down to 50 mK.

Electrical Characteristics in Transparent (Bi3.25Nd0.75)(Ti2.9V0.1)O12 Ferroelectric Thin Films

2014 ◽  
Vol 602-603 ◽  
pp. 777-780
Author(s):  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Film ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Film Capacitor ◽  
X Ray

In this study, we investigated the structure and ferroelectric properties of the as-deposited (Bi3.25Nd0.75)(Ti2.9V0.1)O12ferroelectric thin films on ITO substrate fabricated by rf magnetron sputtering method. The electrical, ferroelectric and physical characteristics of as-deposited (Bi3.25Nd0.75)(Ti2.9V0.1)O12thin films were developed under different conditions to find the optimal deposited parameters. The crystalline structure of the prepared (Bi3.25Nd0.75)(Ti2.9V0.1)O12thin films was analyzed by X-ray diffraction (XRD). Field emission scanning electron microscopy (FESEM) was used to observe the film thickness and the surface morphology including grain size and porosity. Additionally, the remnant polarization of the as-deposited ferroelectric thin films was improved by neodymium and vanadium elements doped in this study. The remanent polarization of as-deposited ferroelectric thin films was 11 μC/cm2as the measured frequency of 1kHz. Finally, the polarization of as-deposited ferroelectric thin film capacitor was decreased by 9% after the fatigue test with 109switching cycles.

In-Plane Uniaxial Magnetic Anisotropy of Cobalt Doped Y3Fe5O12 Epitaxial Films

1999 ◽  
Vol 603 ◽  
Author(s):  
Darren Dale ◽  
G. Hu ◽  
Vincent Balbarin ◽  
Y. Suzuki
Keyword(s):  
Uniaxial Anisotropy ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Garnet Films ◽  
Integrated Devices ◽  
Potential Applications ◽  
Order Of Magnitude

AbstractIn an effort to develop a magnetic biasing layer for potential applications in integrated devices, we have grown thin films of Y3Fe5O12 with increased uniaxial anisotropy by doping with varying Co2+, concentration. To compensate for the charge differential between Co2+ and Fe3+, Ge4+ and Ce4+ are substituted for Fe3+ and y3+, respectively. These garnet films, prepared using pulsed laser deposition on (110) oriented Gd3Ga5O12 substrates, exhibit excellent crystallinity as determined from X-ray diffraction and Rutherford backscattering spectroscopy. The addition of Co2+ in Y3Fe5O12 films enhances the in-plane uniaxial anisotropy over an order of magnitude, depending on composition.

Polydomain Structure of Epitaxial PbTiO3 films on MgO

1997 ◽  
Vol 493 ◽  
Author(s):  
S. P. Alpay ◽  
A. S. Prakash ◽  
S. Aggarwal ◽  
R. Ramesh ◽  
A. L. Roytburd ◽  
...  
Keyword(s):  
Domain Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Theoretical Predictions ◽  
The Stability ◽  
Increasing Temperature ◽  
Stable Domains ◽  
Domain Stability

ABSTRACTA PbTiO3(001) film grown on MgO(001) by pulsed laser deposition is examined as an example to demonstrate the applications of the domain stability map for epitaxial perovskite films which shows regions of stable domains and fractions of domains in a polydomain structure. X-ray diffraction studies indicate that the film has a …c/a/c/a… domain structure in a temperature range of °C to 400°C with the fraction of c-domains decreasing with increasing temperature. These experimental results are in excellent agreement with theoretical predictions based on the stability map.

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

2014 ◽  
Vol 1025-1026 ◽  
pp. 427-431
Author(s):  
Ping Gao ◽  
Wei Zhang ◽  
Wei Tian Wang
Keyword(s):  
Dielectric Properties ◽  
Pulsed Laser ◽  
Signal Amplitude ◽  
Debye Model ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

Colossal Magnetoresistance in Thick La0.7Ca0.3MnO3 Films

1995 ◽  
Vol 384 ◽  
Author(s):  
Randolph E. Treece ◽  
P. Dorsey ◽  
M. Rubinstein ◽  
J. M. Byers ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Colossal Magnetoresistance ◽  
Single Phase ◽  
Laser Deposition ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Mr Effect ◽  
Deposited Films ◽  
Post Deposition

ABSTRACTThick films (0.6 and 2.0 μm) of the colossal magnetoresistance (CMR) material, La0.7Ca0.3MnO3 (LCMO), have been grown by pulsed laser deposition (PLD). The films were grown from single-phase LCMO targets in 100 mTorr 02 pressures and the material deposited on (100) LaAlO3 substrates at deposition temperatures of 800°C. The deposited films were characterized by X-ray diffraction (XRD), magnetic field-dependent resistivity, and Rutherford backscattering spectroscopy (RBS). The LCMO films were shown by XRD to adopt an orthorhombic structure. Brief post-deposition annealing led to ~50,000% and ~12,000% MR effect in the 0.6 μm and 2.0 μm films, respectively.

Hydrothermal Synthesis of Lead Titanate Epitaxial Film for Non-Volatile Memory Device Application

2013 ◽  
Vol 652-654 ◽  
pp. 1846-1850
Author(s):  
Thin Thin Thwe ◽  
Than Than Win ◽  
Yin Maung Maung ◽  
Ko Ko Kyaw Soe
Keyword(s):  
Electron Microscopy ◽  
Silicon Dioxide ◽  
Lead Titanate ◽  
Conduction Mechanism ◽  
Epitaxial Film ◽  
Memory Device ◽  
X Ray Diffraction ◽  
X Ray ◽  
Non Volatile Memory ◽  
Scanning Electron

Hydrothermal synthesized lead titanate (PbTiO3¬) powder was prepared in a Teflon-lined stainless steel bomb at different bath temperatures. X-ray diffraction was performed to examine the phase assignment and crystallographic properties of hydrothermal synthesized lead titanate powder. Silicon dioxide (SiO2) was thermally deposited and adapted as intermediate layer on p-Si (100) substrates for MFIS (Metal/Ferroelectric/ Insulator/Semi-conductor) design. The microstructures of PbTiO3 film for both MFS and MFIS designs were observed by scanning electron microscopy (SEM). Charge conduction mechanism was also interpreted by C-2-V relationship. Polarization and electric field characteristics were measured by Sawyer-Tower circuit and good hysteresis nature was formed for both structures of the films. The loop of MFIS was wider than that of MFS cell. Also, the higher value of polarization (Ps=3.21E-03µC/cm2) for MFIS could be explained on the basis of higher dipole moment in this SiO2 buffer layer.

Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1631-1636 ◽  
Author(s):  
Boya Cui ◽  
D. Bruce Buchholz ◽  
Li Zeng ◽  
Michael Bedzyk ◽  
Robert P. H. Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Room Temperature ◽  
Storage Time ◽  
Laser Deposition ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
3Ω Method ◽  
X Ray

ABSTRACTThe cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.

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