scholarly journals Theoretical analysis of the crystal structure, band-gap energy, polarization, and piezoelectric properties of ZnO-BeO solid solutions

2011 ◽  
Vol 84 (3) ◽  
Author(s):  
L. Dong ◽  
S. P. Alpay
Keyword(s):  
Crystal Structure ◽  
Theoretical Analysis ◽  
Band Gap ◽  
Solid Solutions ◽  
Piezoelectric Properties ◽  
Band Gap Energy ◽  
Gap Energy

Photoelectrochemical Properties of Alkali-treated Sodium Titanate Nanorods

2015 ◽  
Vol 1784 ◽  
Author(s):  
Mingu Kim ◽  
Gwanghyo Choi ◽  
Daeheung Yoo ◽  
Kwangmin Lee
Keyword(s):  
Crystal Structure ◽  
Heat Treatment ◽  
Band Gap ◽  
Heat Treatment Temperature ◽  
Alkali Treatment ◽  
Sodium Titanate ◽  
Band Gap Energy ◽  
Treatment Temperature ◽  
Photoelectrochemical Properties ◽  
Gap Energy

ABSTRACTThe band gap energy of the TiO2 photocatalytic is high at 3.2 eV. Ultraviolet (UV) light irradiation (<388nm) is required for the photocatalytic application. The lowering the band gap energy of TiO2 and enlarging light absorbing area are effective ways to enhance the efficiency of photocatalytic activity. Furthermore, the morphology and crystal structure of nanosized TiO2 considerably influences its photocatalytic behavior.In this study, sodium titanate nanorods were formed using an alkali-treatment and were heat treated at different temperatures. The photoelectrochemical properties of sodium titanate nanorods was measured as a function of heat treatment temperature. The nanorods were prepared on the surface of Ti disk with a diameter of 15mm and a thickness of 3mm. Ti disk was immersed in 5 M NaOH aqueous solution at a temperature of 60 °C for 24 h. Morphology of sodium titanate nanorods was observed using FE-SEM. Crystal structure of sodium titanate nanorods was analyzed using X-ray diffractometer. Photoluminescence (PL) and electrochemical impedance spectroscopy (EIS) was used to evaluate photoelectrochemical properties of sodium titanate nanorods. The thin amorphous sodium titanate layer was formed during alkali-treatment. The sodium titanate layer was changed to nanorods after heat treatment at a temperature of 700 °C. The thickness and length of sodium titanate nanorods obtained at 700 °C were around 100 nm and 1μm, respectively. The crystal structure of sodium titanate was identified with Na2Ti6O13. Above 900 °C, the morphology of nanorods changed to agglomerated shape and the thickness of nanorods increased to 1 μm. The lowest value of PL was obtained at a temperature of 700 °C, while nonalkali treated specimen showed the highest value of PL. EIS revealed that polarization resistance at interface between sodium titanate nanorods and electrolyte was increased with increasing heat treatment temperature.

Effect of Nb doping on morphology, crystal structure, optical band gap energy of TiO2 thin films

2014 ◽  
Vol 14 (3) ◽  
pp. 421-427 ◽  
Author(s):  
Deuk Yong Lee ◽  
Ju-Hyun Park ◽  
Young-Hun Kim ◽  
Myung-Hyun Lee ◽  
Nam-Ihn Cho
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Gap Energy ◽  
Nb Doping

scholarly journals The effect of doping variation on band gap energy and crystal structure of Biochar/TiO2 thin layer

2021 ◽  
Vol 1731 ◽  
pp. 012060
Author(s):  
H D Fahyuan ◽  
F Deswardani ◽  
N Nurhidayah ◽  
M F Afrianto ◽  
H Heriansyah ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Layer ◽  
Band Gap ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Effect Of Doping

Effect of 2,4-dinitrophenol dye doping on tristhioureazinc(II) sulfate single crystals: a potential nonlinear optical material

2020 ◽  
Vol 53 (4) ◽  
pp. 972-981 ◽  
Author(s):  
G. Durgababu ◽  
G. J. Nagaraju ◽  
G. Bhagavannarayana
Keyword(s):  
Crystal Structure ◽  
Band Gap ◽  
Single Crystals ◽  
Nonlinear Optical ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Optical Range ◽  
Gap Energy ◽  
Uv Visible ◽  
Crystalline Matrix

Good quality single crystals of 2,4-dinitrophenol (DNP)-doped tristhioureazinc(II) sulfate (ZTS) were successfully grown by employing the simple and cost effective slow-evaporation solution technique. To study the effect of doping on various device properties, the grown single crystals were subjected to powder X-ray diffraction (PXRD), high-resolution XRD, thermogravimetric analysis (TGA), Vickers hardness testing, and UV–visible, photoluminescence (PL) and Fourier transform IR (FTIR) spectroscopy techniques. The crystal structure of DNP-doped ZTS bulk single crystals remained the same as the crystal structure of ZTS. However, the changes in intensities of the diffraction peaks in the PXRD spectra indicated the incorporation of dopants into the crystalline matrix. FTIR studies confirm the incorporation of dopants into the crystalline matrix, shown by the shifting of certain prominent absorption bands towards higher energy. This also indicated the induced useful strain due to doping, leading to charge transfer and the enhancement of nonlinear optical properties. The cut-off wavelength and optical band gap energy of pure ZTS and DNP-doped ZTS crystals were studied by UV–visible absorption spectroscopy, revealing a slight reduction in the optical band gap energy due to doping, which in turn revealed the enhancement of the optical range. PL studies revealed an enhanced optical range of photoluminescence in ZTS crystals. Second harmonic generation (SGH) studies carried out by the Kurtz powder technique revealed the enhancement of SHG value due to DNP doping. To ensure the thermal stability and mechanical strength of the grown crystals with doping (required from the point of view of device applications), TGA and Vicker's hardness studies were performed.

Effects of L-Cysteine on the Photoluminescence Properties of ZnO:S Quantum Dots

2020 ◽  
Vol 842 ◽  
pp. 242-250
Author(s):  
Wen Dai ◽  
Shu Wang Duo ◽  
Xiao Xia Li ◽  
Zhong Chen ◽  
Zi Chuan Zheng ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Quantum Dots ◽  
Band Gap ◽  
Visible Region ◽  
Average Crystallite Size ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Microwave Hydrothermal ◽  
Uv Emission ◽  
Zno Crystal

ZnO:S quantum dots (QDs) were synthesized by a microwave hydrothermal method. The effects of L-cysteine (L-cys) on the crystal structure, size, morphology, band gap energy and photoluminescence (PL) properties were studied by XRD, EDS, TEM, FTIR, DRS and PL spectroscopy, respectively. The XRD results showed that all samples had a wurtzite structure ZnO crystal structure and the average crystallite size was 8.4, 5.8, and 9.2 nm for ZnO, ZnO:S and L-cys capped ZnO:S (LZOS) QDs, respectively. The EDS, HRTEM and FTIR results confirmed L-cys was capped on the surface of ZnO:S QDs. It was found that the band gap energy was 3.25, 3.29 and 3.31 eV for ZnO, ZnO:S and LZOS QDs, successively. PL spectrum of ZnO QDs showed two emission peaks in the UV and visible region, respectively. When doping S into ZnO, the intensity of the UV emission reduced, while the intensity of the visible emission dramatically increased. Also, L-cys coated obviously enhanced the PL intensity of ZnO:S QDs. This work suggested that LZOS QDs could be applied in luminescent devices.

A New Family of Photoactive Catalysts Based Upon Bismuth Oxide

1987 ◽  
Vol 111 ◽  
Author(s):  
Anthony Harriman ◽  
John M. Thomas ◽  
Wuzong Zhou ◽  
David A. Jefferson
Keyword(s):  
Band Gap ◽  
Solid Solutions ◽  
Bismuth Oxide ◽  
Uv Light ◽  
Electrochemical Techniques ◽  
Solar Spectrum ◽  
Band Gap Energy ◽  
Test System ◽  
Gap Energy ◽  
Wide Range

AbstractBismuth(III) oxide, which is pale yellow, functions as an amphoteric semiconductor, although it is relatively unstable upon illumination with UV light. The energy level positioning, corrosion limits and photoactivity of samples of n-type bismuth oxide have been determined by electrochemical techniques. It was found that this material is able to oxidise water to molecular oxygen upon illumination with UV light.Bismuth oxide forms a wide range of well-defined solid solutions with many other oxides and, in particular, niobium oxide can be used to form several distinct structures, each based upon defective fluorite. Each of these structures will function as an n-type semiconductor, retaining the basic properties of undoped bismuth oxide. However, the exact composition of the solid solution determines the band-gap energy of the semiconductor. Low concentrations of niobium in the lattice induce a substantial lowering in the band-gap energy and give rise to orange coloured materials that can collect a higher fraction of the solar spectrum. Photoelectrochemical studies showed that the presence of niobium caused the valence band to move to lower potentials but had little effect upon the energy of the conduction band. The photochemical properties of these solid solutions were studied using the photooxidation of alcohols as a test system. The results are discussed in terms of the structure of the oxide.

scholarly journals Synthesis of Binary Bi2S3/ZnO Nanorod Array Heterostructure and Their Photoelectrochemical Performance

2019 ◽  
Vol 2019 ◽  
pp. 1-10 ◽  
Author(s):  
Asla A. AL-Zahrani ◽  
Zulkarnain Zainal ◽  
Zainal Abidin Talib ◽  
Hong Ngee Lim ◽  
Laimy Mohd Fudzi ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Band Gap ◽  
Morphological Structure ◽  
Band Gap Energy ◽  
Photoelectrochemical Cell ◽  
Electron Hole ◽  
X Ray ◽  
Gap Energy ◽  
Zno Nras

One of the most effective strategies to improve the photoconversion efficiency in the photoelectrochemical cell is by using an assembly of heterostructures. To do so, a simple and inexpensive method, that is successive ionic layer adsorption and reaction (SILAR), is used to deposit the narrow band gap energy semiconductor Bi2S3 on ZnO nanorod arrays (NRAs) at different SILAR cycles. The obtained binary heterostructure thin films were characterized by using X-ray diffraction (XRD), UV-Vis Spectroscopy, field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray analysis (EDX), Raman spectroscopy, high-resolution transmission electron microscopy (HRTEM), and linear sweep voltammogram (LSV) to prove the crystal structure, optical properties, band gap energy, morphological structure, composition of elements, and electrical properties. The XRD revealed that ZnO NRAs possessed a single wurtzite crystal structure while Bi2S3 possessed an orthorhombic crystal structure. The as-fabricated Bi2S3/ZnO heterostructure exhibited enhanced visible light absorption and charge separation efficiency of photoinduced electron-hole pairs. The band gap energy of binary heterostructure Bi2S3/ZnO NRAs is 3.11, 3.00, 2.33, 1.96, and 1.89 eV at 3, 5, 7, 9, and 11 SILAR cycles, respectively, confirming the substantial improvement of ZnO NRA optical properties. The highest photocurrent density has been achieved by 1.92 mA/cm2 of Bi2S3/ZnO NRAs fabricated at 7 cycles, exhibiting sixfold enhancement compared to that of intrinsic ZnO NRAs (0.336 mA/cm2). This impressive enhancement was ascribed to the significant improvement in morphological structure, crystallinity, and optical properties of heterostructure photoanodes. Significant improvement was achieved in the photoelectrochemical cell (PEC) performance attributed to the fast separation, low recombination rate, and low impedance of the photoinduced electron-hole pairs as shown throughout the electrochemical impedance spectra.

Modification of optical properties of PC-PBT/Cr2O3 and PC-PBT/CdS nanocomposites by gamma irradiation

2020 ◽  
Vol 92 (2) ◽  
pp. 20402
Author(s):  
Kaoutar Benthami ◽  
Mai ME. Barakat ◽  
Samir A. Nouh
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Color Difference ◽  
Band Gap Energy ◽  
Polybutylene Terephthalate ◽  
Γ Irradiation ◽  
Gap Energy ◽  
Vis Spectroscopy ◽  
Oxygen Atoms

Nanocomposite (NCP) films of polycarbonate-polybutylene terephthalate (PC-PBT) blend as a host material to Cr2O3 and CdS nanoparticles (NPs) were fabricated by both thermolysis and casting techniques. Samples from the PC-PBT/Cr2O3 and PC-PBT/CdS NCPs were irradiated using different doses (20–110 kGy) of γ radiation. The induced modifications in the optical properties of the γ irradiated NCPs have been studied as a function of γ dose using UV Vis spectroscopy and CIE color difference method. Optical dielectric loss and Tauc's model were used to estimate the optical band gaps of the NCP films and to identify the types of electronic transition. The value of optical band gap energy of PC-PBT/Cr2O3 NCP was reduced from 3.23 to 3.06 upon γ irradiation up to 110 kGy, while it decreased from 4.26 to 4.14 eV for PC-PBT/CdS NCP, indicating the growth of disordered phase in both NCPs. This was accompanied by a rise in the refractive index for both the PC-PBT/Cr2O3 and PC-PBT/CdS NCP films, leading to an enhancement in their isotropic nature. The Cr2O3 NPs were found to be more effective in changing the band gap energy and refractive index due to the presence of excess oxygen atoms that help with the oxygen atoms of the carbonyl group in increasing the chance of covalent bonds formation between the NPs and the PC-PBT blend. Moreover, the color intensity, ΔE has been computed; results show that both the two synthesized NCPs have a response to color alteration by γ irradiation, but the PC-PBT/Cr2O3 has a more response since the values of ΔE achieved a significant color difference >5 which is an acceptable match in commercial reproduction on printing presses. According to the resulting enhancement in the optical characteristics of the developed NCPs, they can be a suitable candidate as activate materials in optoelectronic devices, or shielding sheets for solar cells.

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