Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires

2016 ◽  
Vol 93 (12) ◽  
Author(s):  
Ž. Gačević ◽  
N. Vukmirović ◽  
N. García-Lepetit ◽  
A. Torres-Pardo ◽  
M. Müller ◽  
...  
Keyword(s):  
Electric Field ◽  
Gan Nanowires ◽  
Recombination Dynamics

scholarly journals Radiative recombination dynamics in tetrapod-shaped CdTe nanocrystals: Evidence for a photoinduced screening of the internal electric field

2008 ◽  
Vol 92 (19) ◽  
pp. 191905 ◽  
Author(s):  
Giovanni Morello ◽  
Davide Tarì ◽  
Luigi Carbone ◽  
Liberato Manna ◽  
Roberto Cingolani ◽  
...  
Keyword(s):  
Electric Field ◽  
Radiative Recombination ◽  
Internal Electric Field ◽  
Cdte Nanocrystals ◽  
Recombination Dynamics

Concentration effects on intrachain polaron recombination in conjugated polymers

2015 ◽  
Vol 17 (2) ◽  
pp. 1299-1308 ◽  
Author(s):  
Luiz Antonio Ribeiro Junior ◽  
Wiliam Ferreira da Cunha ◽  
Antonio Luciano de Almeida Fonseca ◽  
Ricardo Gargano ◽  
Geraldo Magela e Silva
Keyword(s):  
Charge Carrier ◽  
Electric Field ◽  
Conjugated Polymers ◽  
External Electric Field ◽  
Concentration Effects ◽  
Oppositely Charged ◽  
Ssh Model ◽  
Recombination Dynamics ◽  
Electron Interactions

The influence of different charge carrier concentrations on the recombination dynamics between oppositely charged polarons is numerically investigated using a modified version of the Su–Schrieffer–Heeger (SSH) model that includes an external electric field and electron–electron interactions.

Electronic performance of GaN nanowires cathode under electric field

2021 ◽  
pp. 2150230
Author(s):  
Siyuan Huang ◽  
Lei Liu ◽  
Feifei Lu
Keyword(s):  
Electric Field ◽  
Quantum Efficiency ◽  
Internal Field ◽  
Photogenerated Carrier ◽  
Gan Nanowires ◽  
Maximum Value ◽  
Electronic Performance ◽  
Gan Nanowire ◽  
First Time ◽  
Theoretical Results

The built-in electric field of exponential doping can promote the concentration of the photogenerated carrier center to the top surface of the nanowire. The external electric field also can bend the motion trajectory of the emitted electrons toward the collecting side. These field-assisted methods promote the quantum efficiency. In this paper, the emission theory of a single GaN nanowire photocathode is studied for the first time. The effects of height and width of the nanowire, wavelength, intensity of electric field on quantum efficiency of uniformly doped or exponentially doped GaN nanowire photocathodes were explored. It shows that the top of the exponentially doped cathode has a higher quantum efficiency than uniformly doped cathode. With the absence of the field, quantum efficiency of a uniformly doped cathode reaches a maximum value of 55.29% when the width is 150 nm and the wavelength is 220 nm. The form of exponentially doped cathode can generate an internal field. With the internal field, a maximum value rises 56.73% when the height is 900 nm and the wavelength is 230 nm. The theoretical results can direct the preparation of this kind of photocathode.

Recombination dynamics and screening of the internal electric field inZnO/ZnxMg1−xOmultiple quantum wells

2009 ◽  
Vol 80 (23) ◽  
Author(s):  
C. R. Hall ◽  
L. Dao ◽  
K. Koike ◽  
S. Sasa ◽  
H. H. Tan ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Internal Electric Field ◽  
Recombination Dynamics

A Manipulation of Semiconducting GaN Nanowires by Dielectrophoresis Aligned Assembly Deposition (DAAD)

2007 ◽  
Vol 556-557 ◽  
pp. 1023-1026
Author(s):  
Seung Yong Lee ◽  
Tae Hong Kim ◽  
Duk Il Suh ◽  
Ji Eun Park ◽  
Eun Kyung Suh ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Yield ◽  
Semiconducting Nanowires ◽  
Gan Nanowires ◽  
Yield Rate ◽  
Ac Electric Field ◽  
Effect Transistor

We report on investigation of the AC dielectrophoresis aligned assembly deposition (DAAD) of gallium nitride nanowires (GaN NWs) with both the variation of the electric field and the frequency. Our DAAD methods were used to align and manipulate GaN nanowires as well as to extract the electrical properties of semiconducting nanowires. We observed that the ability of the alignment strongly depends on the magnitude of the AC electric field and frequencies. For the higher AC peak-to-peak electric fields (up to 20 Vp-p), the GaN nanowires have a better alignment across the patterned Ti / Au electrodes with a high yield rate of ~ 90% over the entire arrays (in our case, 20 arrays) in the chip at the 20 kHz. From the transport measurements of our AC aligned GaN nanowires using conventional three-probe schemes in field-effect transistor structures, we found that the conductance of the GaN NWs increased for gating voltage greater than zero and decreased for gating voltage less than zero, indicating these GaN nanowires have n-type dopants.

Sign in / Sign up

Export Citation Format

Share Document