scholarly journals Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

2018 ◽  
Vol 924 ◽  
pp. 357-360
Author(s):  
Massimo Zimbone ◽  
Nicolò Piluso ◽  
Grazia Litrico ◽  
Roberta Nipoti ◽  
Riccardo Reitano ◽  
...  
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Crucial Role ◽  
The Body ◽  
Crystal Quality ◽  
High Temperature Annealing ◽  
Double Step ◽  
Lower Temperature ◽  
P Type

Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We found that a high temperature annealing (1750°C, 1h) followed by a lower temperature one (1500°C, 4h) is mandatory to achieve low defects concentration and good crystal quality in both the n-and p-type zones of the device.

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

2009 ◽  
Vol 156-158 ◽  
pp. 493-498
Author(s):  
Ming Hung Weng ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Electrical Activation ◽  
Structural Defects ◽  
High Resistivity ◽  
Al Alloy ◽  
High Temperature Annealing ◽  
Capping Layer ◽  
P Type ◽  
Ion Implanted

This paper reports a detailed study of the electrical activation and the surface morphology of 4H-SiC implanted with different doping ions (P for n-type doping and Al for p-type doping) and annealed at high temperature (1650–1700 °C) under different surface conditions (with or without a graphite capping layer). The combined use of atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning capacitance microscopy (SCM) allowed to clarify the crucial role played by the implant damage both in evolution of 4H-SiC surface roughness and in the electrical activation of dopants after annealing. The high density of broken bonds by the implant makes surface atoms highly mobile and a peculiar step bunching on the surface is formed during high temperature annealing. This roughness can be minimized by using a capping layer. Furthermore, residual lattice defects or precipitates were found in high dose implanted layers even after high temperature annealing. Those defects adversely affect the electrical activation, especially in the case of Al implantation. Finally, the electrical properties of Ni and Ti/Al alloy contacts on n-type and p-type implanted regions of 4H-SiC were studied. Ohmic behavior was observed for contacts on the P implanted area, whilst high resistivity was obtained in the Al implanted layer. Results showed a correlation of the electrical behavior of contacts with surface morphology, electrical activation and structural defects in ion-implanted, particularly, Al doped layer of 4H-SiC.

Structural Relaxation of Amorphous Silicon Induced by High Temperature Annealing

1990 ◽  
Vol 205 ◽  
Author(s):  
L. De Wit ◽  
S. Roorda ◽  
W.C. Sinke ◽  
F.W. Saris ◽  
A.J.M. Berntsen ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Relaxation Process ◽  
Structural Relaxation ◽  
High Temperature Annealing ◽  
Temperature Range ◽  
Amorphous Si ◽  
Anneal Temperature

Structural relaxation of amorphous Si is studied in the temperature range 500-850 °C using Raman spectroscopy. The minumum value for the Raman peakwidth that can be obtained is inversely proportional to the anneal temperature. The relaxation process is basically the same in a-Si prepared by ion implantation and by vacuum evaporation.

Anisotropic Transformation of 4H-SiC Etching Shapes by High-Temperature Annealing and Its Enhancement by Ion Implantation

2010 ◽  
Vol 49 (4) ◽  
pp. 040203 ◽  
Author(s):  
Yasuyuki Kawada ◽  
Takeshi Tawara ◽  
Shun-ichi Nakamura ◽  
Takashi Tsuji ◽  
Masahide Gotoh ◽  
...  
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
High Temperature Annealing

Trench Formation on Ion Implanted SiC Surfaces after Thermal Oxidation

2005 ◽  
Vol 483-485 ◽  
pp. 777-780 ◽  
Author(s):  
Wook Bahng ◽  
Geun Ho Song ◽  
Nam Kyun Kim ◽  
Sang Cheol Kim ◽  
Hyoung Wook Kim ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Ion Implantation ◽  
Doping Concentration ◽  
Side Wall ◽  
Surface Region ◽  
Surface Roughening ◽  
Oxide Growth ◽  
High Temperature Annealing ◽  
Thermal Oxide

The effects of the damage induced during ion implantation on the surface roughening and oxide growth rate were investigated. Using several scheme of doses and acceleration energies, it is found that the amount of the dose predominantly produce damage rather than the acceleration energy, especially near the surface region. It was also found that the damage affects not only the oxide growth rate but also the surface roughening during high temperature annealing. The edge of highly implanted area may have higher doping concentration due to the vicinal side wall effect of the thick oxide mask for ion implantation. It was confirmed by the trench formation after thermal oxide remove.

Supersaturated P-Type Polycrystaline Films Produced by Rapid Thermal Annealing of High Dose Boron Ion Implants for Interconnects and Shallow Junction Diffusion Sources

1990 ◽  
Vol 182 ◽  
Author(s):  
B. Raicu ◽  
M.I. Current ◽  
W.A. Keenan ◽  
D. Mordo ◽  
R. Brennan ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Thermal Annealing ◽  
Cross Section ◽  
Rapid Thermal Annealing ◽  
Single Crystal Silicon ◽  
High Dose ◽  
Crystal Silicon ◽  
Polysilicon Films ◽  
P Type

AbstractHighly conductive p+-polysilicon films were fabricated over Si(100) and SiO2 surfaces using high-dose ion implantation and rapid thermal annealing. Resistivities close to that of single crystal silicon were achieved. These films were characterized by a variety of electrical and optical techniques as well as SIMS and cross-section TEM.

scholarly journals Diffusion of Dopants and Components in Arsenic-Implanted CdTe/HgCdTe Structures under Different High-Temperature Annealing Conditions

Proceedings ◽  
2019 ◽  
Vol 27 (1) ◽  
pp. 41
Author(s):  
Shi ◽  
Lin ◽  
Wei
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Magnetron Sputtering ◽  
Significant Influence ◽  
Thermal Evaporation ◽  
Layer Structure ◽  
High Temperature Annealing ◽  
Annealing Conditions ◽  
Cap Layer ◽  
Diffusion Behaviors

The CdTe cap layers were grown on CdZnTe-substrated HgCdTe (MCT) LPE epilayers by magnetron sputtering and thermal evaporation. The diffusion behaviors of Cd & Hg components and impurities (As or In) in these CdTe/MCT structures subjected to As ion implantation and various Hg overpressure annealing processes were investigated. The conclusions indicate that the defects at the CdTe/MCT interface could produce the accumulations of impurities and the distributions of induced damages (related to the cap layer structure) have a significant influence on the diffusion of components and impurities. By adjusting annealing procedures, the diffusions of components and impurities can be controlled.

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