scholarly journals Superfluid density and carrier concentration across a superconducting dome: The case of strontium titanate

2017 ◽  
Vol 96 (22) ◽  
Author(s):  
Clément Collignon ◽  
Benoît Fauqué ◽  
Antonella Cavanna ◽  
Ulf Gennser ◽  
Dominique Mailly ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Strontium Titanate ◽  
Superfluid Density

scholarly journals Effects of carrier concentration on the superfluid density of high-Tccuprates

1999 ◽  
Vol 60 (21) ◽  
pp. 14617-14620 ◽  
Author(s):  
C. Panagopoulos ◽  
B. D. Rainford ◽  
J. R. Cooper ◽  
W. Lo ◽  
J. L. Tallon ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Superfluid Density

PRESSURE DEPENDENCE OF THE SUPERFLUID DENSITY IN 3He-B

1978 ◽  
Vol 39 (C6) ◽  
pp. C6-37-C6-38 ◽  
Author(s):  
C. N. Archie ◽  
T. A. Alvesalo ◽  
J. E. Bethold ◽  
J. D. Reppy ◽  
R. C. Richardson
Keyword(s):  
Pressure Dependence ◽  
Superfluid Density

Low Temperature Deposition of Zinc Oxide Films

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay
Keyword(s):  
Zinc Oxide ◽  
Carrier Concentration ◽  
Vacuum Arc ◽  
Zno Films ◽  
Al Alloy ◽  
Pure Zinc ◽  
Zinc Oxide Films ◽  
Alloy Target ◽  
Temperature Deposition ◽  
Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

ELECTRICAL RESISTANCE INVESTIGATION OF STRONTIUM TITANATE FILMS FORMED BY SOL–GEL METHOD

2017 ◽  
Vol 62 ◽  
pp. 178-183
Author(s):  
A. V. Ermachikhin ◽  
◽  
N. V. Mukhin ◽  
V. G. Litvinov ◽  
N. B. Rybin ◽  
...  
Keyword(s):  
Strontium Titanate ◽  
Electrical Resistance ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method
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