scholarly journals Giant Fluctuations of Superconducting Order Parameter in Ferromagnet-Superconductor Single-Electron Transistors

2004 ◽  
Vol 93 (21) ◽  
Author(s):  
J. Johansson ◽  
V. Korenivski ◽  
D. B. Haviland ◽  
Arne Brataas
Keyword(s):  
Order Parameter ◽  
Superconducting Order Parameter ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals Simultaneous arrayed formation of single-electron transistors using electromigration in series-connected nanogaps

AIP Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 105005
Author(s):  
Mitsuki Ito ◽  
Mamiko Yagi ◽  
Moe Shimada ◽  
Jun-ichi Shirakashi
Keyword(s):  
Single Electron ◽  
Single Electron Transistors ◽  
In Series ◽  
Electron Transistors

Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2574-2577 ◽  
Author(s):  
Kyung Rok Kim ◽  
Dae Hwan Kim ◽  
Suk-Kang Sung ◽  
Jong Duk Lee ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

AIP Advances ◽  
2014 ◽  
Vol 4 (11) ◽  
pp. 117126 ◽  
Author(s):  
L. Arzubiaga ◽  
F. Golmar ◽  
R. Llopis ◽  
F. Casanova ◽  
L. E. Hueso
Keyword(s):  
Electrical Characterization ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals Measurements of Kondo and Spin Splitting in Single-Electron Transistors

2004 ◽  
Vol 93 (16) ◽  
Author(s):  
A. Kogan ◽  
S. Amasha ◽  
D. Goldhaber-Gordon ◽  
G. Granger ◽  
M. A. Kastner ◽  
...  
Keyword(s):  
Single Electron ◽  
Spin Splitting ◽  
Single Electron Transistors ◽  
Electron Transistors

Single- and double-island ferromagnetic single-electron transistors

2006 ◽  
Vol 126 (2-3) ◽  
pp. 275-278
Author(s):  
J. Barnas ◽  
I. Weymann ◽  
J. Wisniewska ◽  
M. Kowalik ◽  
H.W. Kunert
Keyword(s):  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

A Nanodamascene Process to be used as a Building Block for Nanodevices

2006 ◽  
Vol 961 ◽  
Author(s):  
Christian Dubuc ◽  
Jacques Beauvais ◽  
Dominique Drouin
Keyword(s):  
High Resolution ◽  
Building Block ◽  
Chemical Mechanical Polishing ◽  
Silicon Oxide ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Filling Material ◽  
Single Electron Transistors ◽  
Electron Transistors ◽  
Related Process

ABSTRACTWe report a single-electron transistor concept and its related process enabling the fabrication of ultrasmall junction capacitance. The method utilizes a nanodamascene approach where trenches in silicon oxide are covered with a filling material and planarized with chemical mechanical polishing. Single-electron transistors fabricated with this approach were characterized up to 433 K and demonstrated that the nanodamascene process has high resolution, is relatively simple and is highly scalable.

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