Transport and noise in GaAs/AlGaAs heterojunction bipolar transistors. I. Transport and high current gain

IEEE Transactions on Electron Devices ◽

10.1109/16.24342 ◽

1989 ◽

Vol 36 (6) ◽

pp. 1015-1019 ◽

Author(s):

D.J. Day ◽

S.C. Jue ◽

A. Margittai ◽

P.A. Houston

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

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A New Application of a-SiC Films for Realizing High Current Gain Si Heterojunction Bipolar Transistors

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide IV ◽

10.1007/978-3-642-84804-9_46 ◽

1992 ◽

pp. 322-325

Author(s):

K. Sasaki ◽

T. Miyajima ◽

S. Furukawa

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

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High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.10.231 ◽

2007 ◽

Vol 298 ◽

pp. 852-856 ◽

Author(s):

T. Chung ◽

D.M. Keogh ◽

J.-H. Ryou ◽

D. Yoo ◽

J. Limb ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Metalorganic Chemical

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High-speed, high-current-gain p-n-p InP/InGaAs heterojunction bipolar transistors

IEEE Electron Device Letters ◽

10.1109/55.215087 ◽

1993 ◽

Vol 14 (1) ◽

pp. 19-21 ◽

Author(s):

L.M. Lunardi ◽

S. Chandrasekhar ◽

R.A. Hamm

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

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High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Heavily Doped Base

10.7567/ssdm.1984.c-4-3 ◽

1984 ◽

Author(s):

Hiroshi ITO ◽

Tadao ISHIBASHI ◽

Takayuki SUGETA

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

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Analysis of the short-term DC-current gain variation during high current density-low temperature stress of AlGaAs/GaAs heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.822267 ◽

2000 ◽

Vol 47 (2) ◽

pp. 274-281 ◽

Author(s):

N. Bovolon ◽

R. Schultheis ◽

J.-E. Muller ◽

P. Zwicknagl

Keyword(s):

Low Temperature ◽

Current Density ◽

Heterojunction Bipolar Transistors ◽

High Current Density ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Gain Variation ◽

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High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80145-3 ◽

1995 ◽

Vol 150 ◽

pp. 1281-1286 ◽

Author(s):

H. Ando ◽

N. Okamoto ◽

S. Yamaura ◽

T. Tomioka ◽

T. Takahashi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Molecular Beam Epitaxy System ◽

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Modulation of high current gain (β>49) light-emitting InGaN∕GaN heterojunction bipolar transistors

Applied Physics Letters ◽

10.1063/1.2821380 ◽

2007 ◽

Vol 91 (23) ◽

pp. 232114 ◽

Author(s):

B. F. Chu-Kung ◽

C. H. Wu ◽

G. Walter ◽

M. Feng ◽

N. Holonyak ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

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High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

Applied Physics Letters ◽

10.1063/1.1597989 ◽

2003 ◽

Vol 83 (5) ◽

pp. 1035-1037 ◽

Author(s):

Toshiki Makimoto ◽

Kazuhide Kumakura ◽

Naoki Kobayashi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Double Heterojunction

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High current gain (<2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226854 ◽

2004 ◽

Author(s):

T. Makimoto ◽

K. Kumakura ◽

N. Kobayashi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Offset Voltage ◽

Double Heterojunction

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High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Grown by Gas Source Molecular Beam Epitaxy Using Trimethylamine Alane as the Aluminum Source

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.l309 ◽

1993 ◽

Vol 32 (Part 2, No. 3A) ◽

pp. L309-L311 ◽

Author(s):

Shinji Yamaura ◽

Hideyasu Ando ◽

Naoya Okamoto ◽

Adarsh Sandhu ◽

Tsuyoshi Takahashi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Carbon Doped ◽

Trimethylamine Alane

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