Suppression of boron penetration in BF/sub 2/-implanted p-type gate MOSFET by trapping of fluorines in amorphous gate
1995 ◽
Vol 42
(8)
◽
pp. 1503-1509
◽
2018 ◽
Vol 6
◽
pp. 314-319
◽
1992 ◽
Vol 50
(2)
◽
pp. 1396-1397
Keyword(s):
2019 ◽
Vol 47
(5)
◽
pp. 1247-1257
◽
Achievement of low p-type carrier concentration for MOCVD growth HgCdTe without an annealing process
1998 ◽
Vol 184-185
(1-2)
◽
pp. 1228-1231
1998 ◽
Vol 184-185
(1-2)
◽
pp. 1223-1227
Keyword(s):