Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs

In this study, polymer solar cells were synthesized by adding Sb2S3 nanocrystals (NCs) to thin blended films with polymer poly(3-hexylthiophene)(P3HT) and [6,6]-phenyl-C61-butyric-acid-methyl-ester (PCBM) as the p-type material prepared via the spin-coating method. The purpose of this study is to investigate the dependence of polymer solar cells’ performance on the concentration of Sb2S3 nanocrystals. The effect of the Sb2S3 nanocrystal concentrations (0.01, 0.02, 0.03, and 0.04 mg/mL) in the polymer’s active layer was determined using different characterization techniques. X-ray diffraction (XRD) displayed doped ratio dependences of P3HT crystallite orientations of P3HT crystallites inside a block polymer film. Introducing Sb2S3 NCs increased the light harvesting and regulated the energy levels, improving the electronic parameters. Considerable photoluminescence quenching was observed due to additional excited electron pathways through the Sb2S3 NCs. A UV–visible absorption spectra measurement showed the relationship between the optoelectronic properties and improved surface morphology, and this enhancement was detected by a red shift in the absorption spectrum. The absorber layer’s doping concentration played a definitive role in improving the device’s performance. Using a 0.04 mg/mL doping concentration, a solar cell device with a glass /ITO/PEDOT:PSS/P3HT-PCBM: Sb2S3:NC/MoO3/Ag structure achieved a maximum power conversion efficiency of 2.72%. These Sb2S3 NCs obtained by solvothermal fabrication blended with a P3HT: PCBM polymer, would pave the way for a more effective design of organic photovoltaic devices.

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The Effect of Doping Concentration and Conductivity Type on Preferential Etching of 4H-SiC by Molten KOH

MRS Proceedings ◽

10.1557/proc-815-j5.20 ◽

2004 ◽

Vol 815 ◽

Cited By ~ 7

Author(s):

Ying Gao ◽

Zehong Zhang ◽

Robert Bondokov ◽

Stanislav Soloviev ◽

Tangali Sudarshan

Keyword(s):

Thermal Diffusion ◽

Basal Plane ◽

Doping Concentration ◽

Structural Defects ◽

Etch Pits ◽

Conductivity Type ◽

Isotropic Etching ◽

Electrochemical Processes ◽

P Type ◽

Koh Etching

AbstractMolten KOH etchings were implemented to delineate structural defects in the n- and ptype 4H-SiC samples with different doping concentrations. It was observed that the etch preference is significantly influenced by both the doping concentrations and the conductivity types. The p-type Si-face 4H-SiC substrate has the most preferential etching property, while it is least for n+ samples. It has been clearly demonstrated that the molten KOH etching process involves both chemical and electrochemical processes, during which isotropic etching and preferential etching are competitive. The n+ 4H-SiC substrate was overcompensated via thermal diffusion of boron to p-type and followed by molten KOH etching. Three kinds of etch pits corresponding to threading screw, threading edge, and basal plane dislocations are distinguishably revealed. The same approach was also successfully employed in delineating structural defects in (0001) C-face SiC wafers.

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Ground Plane Impact on Performance of Relaxed Ge FinFETs

Journal of Integrated Circuits and Systems ◽

10.29292/jics.v14i1.55 ◽

2019 ◽

Vol 14 (1) ◽

pp. 1-6

Author(s):

Alberto Vinícius Oliveira ◽

Guilherme Vieira Gonçalves ◽

Paula Ghedini Der Agopian ◽

João Antonio Martino ◽

Jérôme Mitard ◽

...

Keyword(s):

Threshold Voltage ◽

Computer Aided Design ◽

Doping Concentration ◽

Ground Plane ◽

Subthreshold Swing ◽

Voltage Variation ◽

Electrostatic Coupling ◽

P Type ◽

Aided Design ◽

Channel Region

The implementation of a barrier potential layer underneath the channel region, well known as Ground Plane (GP) implantation, and its influence on the performance of relaxed germanium pFinFET devices is investigated in this manuscript. This study aims to explain the fin width dependence of the threshold voltage from experimental data and evaluates the ground plane doping concentration and its depth influence on relaxed p-type channel germanium FinFET parameters, as threshold voltage, transconductance and subthreshold swing, through Technology Computer-Aided Design (TCAD) numerical simulations. The threshold voltage variation reaches up to 80 mV from the narrowest device to the widest one, considering the studied range of ground plane doping concentration. Concerning the subthreshold swing parameter, neither the GP doping concentration, nor its depth play a significant role since the electrostatic coupling is predominant.

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Highly Doped P-Type, N-Type CdS Thin Films and Diodes

MRS Proceedings ◽

10.1557/proc-329-173 ◽

1993 ◽

Vol 329 ◽

Author(s):

Wen P. Shen ◽

Hoi S. Kwok

Keyword(s):

Thin Films ◽

Doping Concentration ◽

Annealing Process ◽

Laser Deposition ◽

Post Annealing ◽

Gaas Substrates ◽

Cds Thin Film ◽

Good Crystalline Quality ◽

Cds Thin Films ◽

P Type

AbstractCdS thin films with doping concentration as high as 1017 cm-3 for p-type or 1021 cm-3 for n-type were achieved by pulsed excimer laser deposition without any post-annealing process. These films were grown on InP or GaAs substrates with good crystalline quality. By using this technique, CdS thin film p-n junctions were produced successfully.

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Suppression of boron penetration in BF/sub 2/-implanted p-type gate MOSFET by trapping of fluorines in amorphous gate

IEEE Transactions on Electron Devices ◽

10.1109/16.398666 ◽

1995 ◽

Vol 42 (8) ◽

pp. 1503-1509 ◽

Cited By ~ 12

Author(s):

Chih-Yung Lin ◽

Chun-Yen Chang ◽

C.C.-H. Hsu

Keyword(s):

Boron Penetration ◽

P Type

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Semiconducting Small Molecules as Active Materials for p‐Type Accumulation Mode Organic Electrochemical Transistors

Advanced Electronic Materials ◽

10.1002/aelm.202000215 ◽

2020 ◽

Vol 6 (6) ◽

pp. 2000215 ◽

Cited By ~ 2

Author(s):

Zachary S. Parr ◽

Reem B. Rashid ◽

Bryan D. Paulsen ◽

Benjamin Poggi ◽

Ellasia Tan ◽

...

Keyword(s):

Small Molecules ◽

Active Materials ◽

Accumulation Mode ◽

P Type ◽

Organic Electrochemical Transistors

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High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.83 ◽

2006 ◽

Vol 527-529 ◽

pp. 83-86 ◽

Cited By ~ 4

Author(s):

Kap Ryeol Ku ◽

Jung Kyu Kim ◽

Jung Doo Seo ◽

Ju Young Lee ◽

Myung Ok Kyun ◽

...

Keyword(s):

Doping Concentration ◽

Concentration Level ◽

Vapor Transport ◽

Crystal Quality ◽

Physical Vapor Transport ◽

Guide Tube ◽

P Type ◽

Transport Method ◽

Vapor Transport Method

SiC single crystal ingots grown by sublimation physical vapor transport (PVT) technique were prepared and then the SiC crystal quality with varying crucible design employing a guide tube and tantalum foil was systematically investigated. The growth rate of 2-inch SiC crystal grown by these crucible designs was about 0.3 mm/hr. The n-type and p-type 2”-SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated. The doping concentration level of below ~1017/cm3 was extracted from the absorption spectrum and Hall measurement. The densities of micropipes and inclusions in SiC crystal boules grown using the graphite/Ta foil double layer guide tube were significantly decreased. Finally we improved crystal quality through the introduction of new crucible design.

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Leakage Currents in P-Channel Accumulation Mode Tft's

MRS Proceedings ◽

10.1557/proc-53-435 ◽

1985 ◽

Vol 53 ◽

Cited By ~ 4

Author(s):

B.A. Khan ◽

T. Marshall ◽

E. Arnold ◽

R. Pandya

Keyword(s):

Thin Films ◽

Doping Concentration ◽

Depletion Layer ◽

Dramatic Reduction ◽

Leakage Currents ◽

Layer Width ◽

Accumulation Mode ◽

Poly Silicon ◽

Depletion Layer Width ◽

Silicon Thin Films

ABSTRACTWe have fabricated accumulation mode MOSFETS in poly-silicon thin films and studied the effect of passivation of the leakage currents in these devices. We have used C-V measurements ot determine the effective doping concentration and depletion layer widths in the passivated and unpassivated devices. We find that passivation reduces the effective doping concentration and therefore increases the depletion layer width. Although this change in effective doping concentration is small (less thean a factor of 2), the increase in depletion layer width is sufficient to pinch off the passivated device but not the unpassivated one. This leads to the dramatic reduction in leakage currents after passivation.

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