Plasma-activated chemical vapor deposition of bismuth-substituted iron garnets for magneto-optical data storage

MnO2 nanostructures were fabricated by plasma assisted-chemical vapor deposition (PA-CVD) using a fluorinated diketonate diamine manganese complex, acting as single-source precursor for both Mn and F. The syntheses were performed from Ar/O2 plasmas on MgAl2O4(100), YAlO3(010), and Y3Al5O12(100) single crystals at a growth temperature of 300 °C, in order to investigate the substrate influence on material chemico-physical properties. A detailed characterization through complementary analytical techniques highlighted the formation of highly pure and oriented F-doped systems, comprising the sole β-MnO2 polymorph and exhibiting an inherent oxygen deficiency. Optical absorption spectroscopy revealed the presence of an appreciable Vis-light harvesting, of interest in view of possible photocatalytic applications in pollutant degradation and hydrogen production. The used substrates directly affected the system structural features, as well as the resulting magnetic characteristics. In particular, magnetic force microscopy (MFM) measurements, sensitive to the out-of-plane magnetization component, highlighted the formation of spin domains and long-range magnetic ordering in the developed materials, with features dependent on the system morphology. These results open the door to future engineering of the present nanostructures as possible magnetic media for integration in data storage devices.

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Chemical vapor deposition of rare earth iron garnets for bubble domain devices

Journal of Crystal Growth ◽

10.1016/0022-0248(73)90191-7 ◽

1973 ◽

Vol 18 (2) ◽

pp. 143-146 ◽

Cited By ~ 4

Author(s):

McD. Robinson

Keyword(s):

Rare Earth ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Iron Garnets

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In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100137653 ◽

1995 ◽

Vol 53 ◽

pp. 256-257

Author(s):

J. Drucker ◽

R. Sharma ◽

J. Kouvetakis ◽

K.H.J. Weiss

Keyword(s):

Electron Beam ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Quantum Effect ◽

Line Drawing ◽

Chemical Vapor ◽

Environmental Cell ◽

Engineering Changes ◽

Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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The relaxation of compressive biaxial strains in SOS via microtwins

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100155013 ◽

1989 ◽

Vol 47 ◽

pp. 608-609

Author(s):

M. E. Twigg ◽

E. D. Richmond ◽

J. G. Pellegrino

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Compressive Stress ◽

Vapor Deposition ◽

Partial Dislocation ◽

Molecular Beam ◽

Volume Fraction ◽

Chemical Vapor ◽

Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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