Plasma-Assisted Chemical Vapor Deposition of F-Doped MnO2 Nanostructures on Single Crystal Substrates

MnO2 nanostructures were fabricated by plasma assisted-chemical vapor deposition (PA-CVD) using a fluorinated diketonate diamine manganese complex, acting as single-source precursor for both Mn and F. The syntheses were performed from Ar/O2 plasmas on MgAl2O4(100), YAlO3(010), and Y3Al5O12(100) single crystals at a growth temperature of 300 °C, in order to investigate the substrate influence on material chemico-physical properties. A detailed characterization through complementary analytical techniques highlighted the formation of highly pure and oriented F-doped systems, comprising the sole β-MnO2 polymorph and exhibiting an inherent oxygen deficiency. Optical absorption spectroscopy revealed the presence of an appreciable Vis-light harvesting, of interest in view of possible photocatalytic applications in pollutant degradation and hydrogen production. The used substrates directly affected the system structural features, as well as the resulting magnetic characteristics. In particular, magnetic force microscopy (MFM) measurements, sensitive to the out-of-plane magnetization component, highlighted the formation of spin domains and long-range magnetic ordering in the developed materials, with features dependent on the system morphology. These results open the door to future engineering of the present nanostructures as possible magnetic media for integration in data storage devices.

Download Full-text

Structural features of epitaxial NiFe2O4 thin films grown on different substrates by direct liquid injection chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2012.02.007 ◽

2012 ◽

Vol 345 (1) ◽

pp. 44-50 ◽

Cited By ~ 26

Author(s):

R. Datta ◽

B. Loukya ◽

N. Li ◽

A. Gupta

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Structural Features ◽

Liquid Injection ◽

Direct Liquid Injection

Download Full-text

Nanostructured Nickel Oxide Films Prepared by Chemical Vapor Deposition and Their Electrochromic Properties

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2008.563 ◽

2008 ◽

Vol 8 (5) ◽

pp. 2703-2706 ◽

Cited By ~ 4

Author(s):

J. R. Vargas Garcia ◽

E. M. Lazcano Ugalde ◽

F. Hernandez Santiago ◽

J. M. Hallen Lopez

Keyword(s):

Chemical Vapor Deposition ◽

Nickel Oxide ◽

Vapor Deposition ◽

Near Infrared ◽

Chemical Vapor ◽

Optical Transmittance ◽

Structural Features ◽

Electrochromic Properties ◽

Wide Range ◽

Nio Films

The influence of the deposition conditions on the structural features and electrochromic properties of nickel oxide (NiO) films prepared by chemical vapor deposition has been investigated. NiO films have been prepared on fluorine doped tin oxide (FTO) coated glass substrates from nickel-acetylacetonate precursor and their electrochromic properties have been studied by cyclic voltammetry in a 0.1 M KOH solution at room temperature. Films exhibiting only the NiO phase were obtained at deposition temperatures higher than 450 °C in a wide range of reactor pressures (0.13 to 66.6 kPa). Particularly, NiO films prepared at 500–550 °C from 0.13 to 53.3 kPa are transparent in nature and exhibit a crystallite size varying from 10 to 60 nm. An appreciable anodic electrochromic change from transparent to black coloured resulted from a very porous surface morphology and film thickness of about 3.5 μm. The electrochromic change was maintained over 3000 switching cycles. Nanostructured 3.5 μm-thick NiO films showed a maximum difference in optical transmittance of about 40% in the near-infrared region. These results make the nanostructured NiO films comparables with those prepared by other deposition techniques.

Download Full-text

Plasma-activated chemical vapor deposition of bismuth-substituted iron garnets for magneto-optical data storage

IEEE Transactions on Magnetics ◽

10.1109/20.490335 ◽

1995 ◽

Vol 31 (6) ◽

pp. 3239-3241 ◽

Cited By ~ 7

Author(s):

E.V. Anoikin ◽

P.J. Sides

Keyword(s):

Chemical Vapor Deposition ◽

Data Storage ◽

Vapor Deposition ◽

Chemical Vapor ◽

Optical Data Storage ◽

Optical Data ◽

Iron Garnets

Download Full-text

Chemical vapor deposition of germanium-rich CrGex nanowires

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.12.100 ◽

2021 ◽

Vol 12 ◽

pp. 1365-1371

Author(s):

Vladislav Dřínek ◽

Stanislav Tiagulskyi ◽

Roman Yatskiv ◽

Jan Grym ◽

Radek Fajgar ◽

...

Keyword(s):

Electron Microscopy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Complex Structure ◽

Chemical Vapor ◽

Analytical Techniques ◽

X Ray ◽

Selected Area Electron Diffraction ◽

Crystalline Germanium

Chemical vapor deposition was applied to synthetize nanostructured deposits containing several sorts of nanoobjects (i.e., nanoballs, irregular particles, and nanowires). Analytical techniques, that is, high-resolution transmission electron microscopy, scanning electron microscopy, electron dispersive X-ray analysis, selected area electron diffraction, and X-ray photoelectron spectroscopy, showed that unlike nanoballs and particles composed of crystalline germanium, the layer was made of chromium germanide CrGex. The nanowires possessed a complex structure, namely a thin crystalline germanium core and amorphous CrGex coating. The composition of the nanowire coating was [Cr]/[Ge] = 1:(6–7). The resistance of the nanowire–deposit system was estimated to be 2.7 kΩ·cm using an unique vacuum contacting system.

Download Full-text

Surface structure and composition of nanocrystalline SnO2 thin films obtained by Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-822-s7.8 ◽

2004 ◽

Vol 822 ◽

Author(s):

Davide Barreca ◽

Elza Bontempi ◽

Laura E. Depero ◽

Cinzia Maragno ◽

Eugenio Tondello

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Chemical Vapor ◽

Structural Features ◽

Growth Surface ◽

Precursor Film ◽

X Ray ◽

Synthesis Conditions

AbstractNanocrystalline SnO2 thin films were synthesized by Chemical Vapor Deposition on Si(100) and Al2O3 substrates using bis(diethylamino)dimethylstannane(IV) [(CH3)2Sn(N(C2H5)2)2] as precursor. Film growth was performed at 400-500°C in an O2(H2O)+N2 atmosphere, with the aim of studying the effects of the synthesis conditions on the coating properties. The sample chemical composition and surface morphology were analyzed by X-ray Photoelectron Spectroscopy (XPS) and Atomic Force Microscopy (AFM), while their structural features were investigated by Glancing Incidence X-ray Diffraction (GIXRD) and X-ray Reflectivity (XRR). In this paper, the attention is focused on the interplay between film nanostructure and morphology, with particular regard to the influence of the growth surface.

Download Full-text

Iron Sulfide (FeS2) Thin Films From Single-Source Precursors by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

MRS Proceedings ◽

10.1557/proc-606-133 ◽

1999 ◽

Vol 606 ◽

Cited By ~ 10

Author(s):

Paul O'Brien ◽

David J. Otway ◽

Jin-Ho Park

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Iron Sulfide ◽

Chemical Vapor ◽

Analytical Techniques ◽

Single Source ◽

Sem Images ◽

Organic Precursor ◽

Single Source Precursors

AbstractDialkyl (or mixed alkyl)-dithiocarbamato iron(III) complexes have been used for the deposition of iron sulfide thin films using chemical vapor deposition techniques. The single-source precursors used in this work have been prepared by the reaction of FeCl3with dialkyldithiocarbamate sodium salts and characterized by a number of analytical techniques. Good quality thin films of FeS2 have been prepared from the single-source metal organic precursor, [Fe(S2CNMeiPr)3], by AACVD. XRD patterns of the films indicated crystalline iron sulfide (FeS2) grown at between 375 – 450 °C. SEM images show the films to have reasonable morphology and to be crystalline.

Download Full-text

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100137653 ◽

1995 ◽

Vol 53 ◽

pp. 256-257

Author(s):

J. Drucker ◽

R. Sharma ◽

J. Kouvetakis ◽

K.H.J. Weiss

Keyword(s):

Electron Beam ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Quantum Effect ◽

Line Drawing ◽

Chemical Vapor ◽

Environmental Cell ◽

Engineering Changes ◽

Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

Download Full-text

The relaxation of compressive biaxial strains in SOS via microtwins

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100155013 ◽

1989 ◽

Vol 47 ◽

pp. 608-609

Author(s):

M. E. Twigg ◽

E. D. Richmond ◽

J. G. Pellegrino

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Compressive Stress ◽

Vapor Deposition ◽

Partial Dislocation ◽

Molecular Beam ◽

Volume Fraction ◽

Chemical Vapor ◽

Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Download Full-text