Electrical characterization of junctions and bipolar transistors formed with in situ doped low-temperature (800 degrees C) epitaxial silicon

1991 ◽  
Vol 38 (1) ◽  
pp. 128-134
Author(s):  
S. Ohi ◽  
W.R. Burger ◽  
R. Reif
Keyword(s):  
Low Temperature ◽  
Electrical Characterization ◽  
Bipolar Transistors ◽  
Epitaxial Silicon

In-Situ Electrical Characterization of Low Temperature Getter Thin Films Activation

2018 ◽  
Vol 86 (16) ◽  
pp. 47-53
Author(s):  
Sylvain Lemettre ◽  
Clément Bessouet ◽  
Philippe Coste ◽  
Helene Lecoq ◽  
Thierry Sauvage ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electrical Characterization

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

scholarly journals In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

AIP Advances ◽  
2014 ◽  
Vol 4 (11) ◽  
pp. 117126 ◽  
Author(s):  
L. Arzubiaga ◽  
F. Golmar ◽  
R. Llopis ◽  
F. Casanova ◽  
L. E. Hueso
Keyword(s):  
Electrical Characterization ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors
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