Modulation-doped field-effect transistors with an 8-nm InGaAs/InAs/InGaAs quantum well

IEEE Electron Device Letters ◽

10.1109/55.748904 ◽

1999 ◽

Vol 20 (3) ◽

pp. 109-112 ◽

Author(s):

D. Xu ◽

J. Osaka ◽

Y. Umeda ◽

T. Suemitsu ◽

Y. Yamane ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Ingaas Quantum Well

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Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2438433 ◽

2015 ◽

Vol 36 (7) ◽

pp. 672-674 ◽

Author(s):

Tae-Woo Kim ◽

Hyuk-Min Kwon ◽

Seung Heon Shin ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

...

Keyword(s):

High Pressure ◽

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ingaas Quantum Well

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Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131661 ◽

2011 ◽

Author(s):

M. Radosavljevic ◽

G. Dewey ◽

D. Basu ◽

J. Boardman ◽

B. Chu-Kung ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Source Separation ◽

Thin Body ◽

High K ◽

Ingaas Quantum Well ◽

High K Gate Dielectric

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Cellular Monte Carlo investigation of InAs and InGaAs quantum well field effect transistors

2010 14th International Workshop on Computational Electronics ◽

10.1109/iwce.2010.5678003 ◽

2010 ◽

Author(s):

Fabio Alessio Marino ◽

Diego Guerra ◽

David K. Ferry ◽

Sthepen M. Goodnick ◽

Marco Saraniti

Keyword(s):

Monte Carlo ◽

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Monte Carlo Investigation ◽

Cellular Monte Carlo ◽

Ingaas Quantum Well

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Improvement of the carrier transport property and interfacial behavior in InGaAs quantum well Metal-Oxide-Semiconductor Field-Effect-Transistors with sulfur passivation

Journal of Sensor Science and Technology ◽

10.46670/jsst.2020.29.4.266 ◽

2020 ◽

Vol 29 (4) ◽

pp. 266-269

Author(s):

Jun-Gyu Kim ◽

Dae-Hyun Kim

Keyword(s):

Quantum Well ◽

Field Effect ◽

Carrier Transport ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interfacial Behavior ◽

Sulfur Passivation ◽

Carrier Transport Property ◽

Ingaas Quantum Well

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Optical reading of field‐effect transistors by phase‐space absorption quenching in a single InGaAs quantum well conducting channel

Applied Physics Letters ◽

10.1063/1.98088 ◽

1987 ◽

Vol 50 (10) ◽

pp. 585-587 ◽

Author(s):

D. S. Chemla ◽

I. Bar‐Joseph ◽

C. Klingshirn ◽

D. A. B. Miller ◽

J. M. Kuo ◽

...

Keyword(s):

Phase Space ◽

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Conducting Channel ◽

Ingaas Quantum Well

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Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications

2010 International Electron Devices Meeting ◽

10.1109/iedm.2010.5703306 ◽

2010 ◽

Author(s):

M. Radosavljevic ◽

G. Dewey ◽

J. M. Fastenau ◽

J. Kavalieros ◽

R. Kotlyar ◽

...

Keyword(s):

Quantum Well ◽

Low Power ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Source Separation ◽

High K ◽

Low Power Logic ◽

Ingaas Quantum Well

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Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- $\kappa$ Gate Dielectrics

IEEE Electron Device Letters ◽

10.1109/led.2012.2205214 ◽

2012 ◽

Vol 33 (9) ◽

pp. 1255-1257 ◽

Author(s):

Fei Xue ◽

Aiting Jiang ◽

Han Zhao ◽

Yen-Ting Chen ◽

Yanzhen Wang ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Thickness Dependence ◽

Channel Thickness ◽

Ingaas Quantum Well

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Microwave detection performance of In 0.53 Ga 0.47 As/GaAs 0.5 Sb 0.5 quantum‐well tunnel field‐effect transistors

Electronics Letters ◽

10.1049/el.2016.0328 ◽

2016 ◽

Vol 52 (10) ◽

pp. 842-844 ◽

Author(s):

Wenjun Li ◽

Patrick Fay ◽

Tao Yu ◽

Judy Hoyt

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Detection Performance ◽

Microwave Detection

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Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Applied Physics Letters ◽

10.1063/1.4870257 ◽

2014 ◽

Vol 104 (13) ◽

pp. 131605 ◽

Author(s):

Thenappan Chidambaram ◽

Dmitry Veksler ◽

Shailesh Madisetti ◽

Andrew Greene ◽

Michael Yakimov ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

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A semi-analytical model for III-V semiconductor quantum well field effect transistors

2014 International Conference on Electrical Engineering and Information & Communication Technology ◽

10.1109/iceeict.2014.6919039 ◽

2014 ◽

Author(s):

M. S. Rahman ◽

M. S. Islam ◽

A. Haque

Keyword(s):

Quantum Well ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Semiconductor Quantum Well

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