Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- $\kappa$ Gate Dielectrics

2012 ◽  
Vol 33 (9) ◽  
pp. 1255-1257 ◽  
Author(s):  
Fei Xue ◽  
Aiting Jiang ◽  
Han Zhao ◽  
Yen-Ting Chen ◽  
Yanzhen Wang ◽  
...  
1999 ◽  
Vol 20 (3) ◽  
pp. 109-112 ◽  
Author(s):  
D. Xu ◽  
J. Osaka ◽  
Y. Umeda ◽  
T. Suemitsu ◽  
Y. Yamane ◽  
...  

2002 ◽  
Vol 12 (03) ◽  
pp. 925-937 ◽  
Author(s):  
X. G. PERALTA ◽  
S. J. ALLEN ◽  
M. C. WANKE ◽  
N. E. HARFF ◽  
M. P. LILLY ◽  
...  

We demonstrate resonant detection of terahertz radiation by two-dimensional plasma waves in two field effect devices: a commercial field effect transistor (FET) and a double quantum well field effect transistor with a periodic grating gate. In both devices, the standing 2-D plasmon is tuned to the frequency of the THz radiation by varying the gate bias. The double quantum well field effect transistors exhibits a rich photoconductive response corresponding to spatial harmonics of the standing 2-D plasmons under the metal part of the periodic gate.


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