Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon

ABSTRACTIn this paper is reported the development and implementation of a new local electronic stopping model for arsenic ion implantation into single-crystal silicon. Monte Carlo binary collision (MCBC) models are appropriate for studying channeling effects since it is possible to include the crystal structure in the simulators. One major inadequacy of existing MCBC codes is that the electronic stopping of implanted ions is not accurately and physically accounted for, although it is absolutely necessary for predicting the channeling tails of the profiles. In order to address this need, we have developed a new electronic stopping power model using a directionally dependent electronic density (to account for valence bonding) and an electronic stopping power based on the density functional approach. This new model has been implemented in the MCBC code, UT-MARLOWE The predictions of UT-MARLOWE with this new model are in very good agreement with experimentally-measured secondary ion mass spectroscopy (SIMS) profiles for both on-axis and off-axis arsenic implants in the energy range of 15-180 keV.

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A more efficient approach for Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V ◽

10.1109/nupad.1994.343482 ◽

2002 ◽

Cited By ~ 8

Author(s):

S.-H. Yang ◽

D. Lim ◽

S. Morris ◽

A.F. Tasch

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Single Crystal ◽

Single Crystal Silicon ◽

Crystal Silicon ◽

Efficient Approach

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A More Efficient Approach for Monte Carlo Simulation of Deeply-Channeled Implanted Profiles in Single-Crystal Silicon

MRS Proceedings ◽

10.1557/proc-316-639 ◽

1993 ◽

Vol 316 ◽

Cited By ~ 1

Author(s):

Shyh-Horng Yang ◽

David Lim ◽

Steven J. Morris ◽

AL F. Tasch

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Single Crystal ◽

Single Crystal Silicon ◽

Monte Carlo Code ◽

Crystal Silicon ◽

New Approach ◽

Efficient Approach ◽

Time Savings

ABSTRACTIn this paper is reported a new approach for the Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon which has greatly improved efficiency. This approach has been successfully implemented in the UT Monte Carlo code (UT-MARLOWE). A time savings of up to 212X has been observed with a 4-stage simulation. A simulation of arsenic implants with 15 keV implant energy typically takes about 12 minutes on a workstation.

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Monte Carlo simulation of boron implantation into single-crystal silicon

IEEE Transactions on Electron Devices ◽

10.1109/16.141226 ◽

1992 ◽

Vol 39 (7) ◽

pp. 1614-1621 ◽

Cited By ~ 73

Author(s):

K.M. Klein ◽

C. Park ◽

A.F. Tasch

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Single Crystal ◽

Single Crystal Silicon ◽

Crystal Silicon ◽

Boron Implantation

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Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118370 ◽

1985 ◽

Vol 43 ◽

pp. 300-301

Author(s):

N. Lewis ◽

E. L. Hall ◽

A. Mogro-Campero ◽

R. P. Love

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Single Crystal Silicon ◽

Silicon Layer ◽

Device Fabrication ◽

Silicon On Insulator ◽

High Dose ◽

Crystal Silicon ◽

Oxygen Ion ◽

Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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