A Monte Carlo Binary Collision Model for  BF 2 Implants into (100) Single‐Crystal Silicon

ABSTRACTIn this paper is reported the development and implementation of a new local electronic stopping model for arsenic ion implantation into single-crystal silicon. Monte Carlo binary collision (MCBC) models are appropriate for studying channeling effects since it is possible to include the crystal structure in the simulators. One major inadequacy of existing MCBC codes is that the electronic stopping of implanted ions is not accurately and physically accounted for, although it is absolutely necessary for predicting the channeling tails of the profiles. In order to address this need, we have developed a new electronic stopping power model using a directionally dependent electronic density (to account for valence bonding) and an electronic stopping power based on the density functional approach. This new model has been implemented in the MCBC code, UT-MARLOWE The predictions of UT-MARLOWE with this new model are in very good agreement with experimentally-measured secondary ion mass spectroscopy (SIMS) profiles for both on-axis and off-axis arsenic implants in the energy range of 15-180 keV.

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A Three-Dimensional Monte Carlo Model for Phosphorus Implants into (100) Single-Crystal Silicon

MRS Proceedings ◽

10.1557/proc-490-33 ◽

1997 ◽

Vol 490 ◽

Author(s):

Myung-Sik Son ◽

Ho-Jung Hwang

Keyword(s):

Monte Carlo ◽

Single Crystal ◽

Room Temperature ◽

Monte Carlo Model ◽

Three Dimensional ◽

Single Crystal Silicon ◽

Amorphous Region ◽

Electronic Energy ◽

Crystal Silicon ◽

Dynamic Simulation Model

ABSTRACTAn alternative three-dimensional (3D) Monte Carlo (MC) dynamic simulation model for phosphorus implant into (100) single-crystal silicon has been developed which incorporates the effects of channeling and damage. This model calculates the trajectories of both implanted ions and recoiled silicons and concurrently and explicitly affects both ions and recoils due to the presence of accumulative damage. In addition, the model for room-temperature implant accounts for the self-annealing effect using our defined recombination probabilities for vacancies and interstitials saved on the unit volumes. Our model has been verified by the comparison with the previously published SIMS data over commonly used energy range between 10 and 180 keV, using our proposed empirical electronic energy loss model. The 3D formations of the amorphous region and the ultra-shallow junction around the implanted region could be predicted by using our model, TRICSI (TRansport Ions into Crystal-Silicon).

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A more efficient approach for Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon

Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V ◽

10.1109/nupad.1994.343482 ◽

2002 ◽

Cited By ~ 8

Author(s):

S.-H. Yang ◽

D. Lim ◽

S. Morris ◽

A.F. Tasch

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Single Crystal ◽

Single Crystal Silicon ◽

Crystal Silicon ◽

Efficient Approach

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Electron-beam spreading in thin foils at 40keV

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100075609 ◽

1983 ◽

Vol 41 ◽

pp. 370-371

Author(s):

T.A. Stephenson ◽

M.H. Loretto ◽

I.P. Jones ◽

P. Augustus

Keyword(s):

Monte Carlo ◽

Single Crystal ◽

Cross Sections ◽

Single Crystal Silicon ◽

Orientation Dependence ◽

High Angle ◽

Crystal Silicon ◽

Beam Spreading ◽

Monte Carlo Calculations ◽

Thin Foils

Experiments have been performed to determine the effects of thickness, and crystallinity on beam spreading in thin foils. The experimental technique consists of measuring an incident and exit electron probe size as shown in Fig. 1. Beam spreading is defined as the difference between these two quantities. Results were compared with Monte Carlo calculations.Beam spreading experiments in single crystal silicon oriented positive of a 440 reflection have shown that the experimental measurements are adequately described by Monte Carlo calculations using Doyle and Turner elastic scattering cross-sections (Fig.2). The addition of an inelastic component via the Bethe continuous loss approximation produces an insignificant change. Adjustment for the generation and scattering of fast secondary electrons is reserved for future work.Two experiments were performed to elucidate the effects of crystallinity. The first involved single crystal silicon in which exit grobe size measurgments were performed with diffracting conditions s=+0.0027Å-1 and s=-0.0034Å-1 from 220 (Table 1). Since beam spreading is dependent on high angle scattering, these results are qualitatively consistent with the orientation dependence of high angle diffuse scattering.

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A More Efficient Approach for Monte Carlo Simulation of Deeply-Channeled Implanted Profiles in Single-Crystal Silicon

MRS Proceedings ◽

10.1557/proc-316-639 ◽

1993 ◽

Vol 316 ◽

Cited By ~ 1

Author(s):

Shyh-Horng Yang ◽

David Lim ◽

Steven J. Morris ◽

AL F. Tasch

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Single Crystal ◽

Single Crystal Silicon ◽

Monte Carlo Code ◽

Crystal Silicon ◽

New Approach ◽

Efficient Approach ◽

Time Savings

ABSTRACTIn this paper is reported a new approach for the Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon which has greatly improved efficiency. This approach has been successfully implemented in the UT Monte Carlo code (UT-MARLOWE). A time savings of up to 212X has been observed with a 4-stage simulation. A simulation of arsenic implants with 15 keV implant energy typically takes about 12 minutes on a workstation.

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