Contacts on single crystals grown by liquid phase epitaxy

2001 ◽  
Vol 11 (1) ◽  
pp. 296-299
Author(s):  
Y. Enomoto ◽  
H. Suzuki ◽  
S. Hoshi ◽  
T. Izumi ◽  
Y. Shiohara
Keyword(s):  
Liquid Phase ◽  
Single Crystals ◽  
Liquid Phase Epitaxy

Some studies on the growth and properties of Pb1−xSnxTe layers by hot-wall and liquid-phase epitaxy

1985 ◽  
Vol 63 (6) ◽  
pp. 753-756
Author(s):  
K. B. Sundaram ◽  
N. Dalacu ◽  
B. K. Garside
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Single Crystals ◽  
Liquid Phase Epitaxy ◽  
Device Fabrication ◽  
Laue Diffraction ◽  
X Ray ◽  
Hot Wall Epitaxy

Pb0.92Sn0.08Te layers have been grown by hot-wall and liquid-phase epitaxy techniques. In the hot-wall epitaxy case, layers are grown on BaF2 and Pb0.92Sn0.08Te single-crystal substrates, while in the case of liquid-phase epitaxy, single crystals of PbTe and Pb0.92Sn0.08Te are used. In both cases x-ray Laue diffraction studies indicated the growth of good quality epilayers suitable for device fabrication.

Optical Property of GaN Single Crystals Grown by Liquid Phase Epitaxy (LPE)

2004 ◽  
Vol 43 (No. 2A) ◽  
pp. L173-L175 ◽  
Author(s):  
Kunimichi Omae ◽  
Tomoya Iwahashi ◽  
Fumio Kawamura ◽  
Masashi Yoshimura ◽  
Yusuke Mori ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Optical Property ◽  
Single Crystals ◽  
Liquid Phase Epitaxy

Effect of additives on liquid phase epitaxy growth of non-polar GaN single crystals using Na flux method

2011 ◽  
Vol 9 (3-4) ◽  
pp. 457-460 ◽  
Author(s):  
K. Masumoto ◽  
T. Someno ◽  
K. Murakami ◽  
H. Imabayashi ◽  
H. Takazawa ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Single Crystals ◽  
Liquid Phase Epitaxy ◽  
Flux Method ◽  
Effect Of Additives

Nucleation of domain walls in iron garnet single crystals grown from liquid phase epitaxy

1997 ◽  
Vol 82 (5) ◽  
pp. 2457-2460 ◽  
Author(s):  
Kazushi Shirai ◽  
Kenji Ishikura ◽  
Norio Takeda
Keyword(s):  
Liquid Phase ◽  
Single Crystals ◽  
Liquid Phase Epitaxy ◽  
Domain Walls ◽  
Iron Garnet

Drastic Decrease in Dislocations during Liquid Phase Epitaxy Growth of GaN Single Crystals Using Na flux Method without Any Artificial Processes

2006 ◽  
Vol 45 (4A) ◽  
pp. 2528-2530 ◽  
Author(s):  
Fumio Kawamura ◽  
Hidekazu Umeda ◽  
Minoru Kawahara ◽  
Masashi Yoshimura ◽  
Yusuke Mori ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Single Crystals ◽  
Liquid Phase Epitaxy ◽  
Flux Method ◽  
Drastic Decrease

Properties of gallium- and aluminum-doped bulk ZnO obtained from single-crystals grown by liquid phase epitaxy

2009 ◽  
Vol 311 (19) ◽  
pp. 4408-4413 ◽  
Author(s):  
Jun Kobayashi ◽  
Naoki Ohashi ◽  
Hideyuki Sekiwa ◽  
Isao Sakaguchi ◽  
Miyuki Miyamoto ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Single Crystals ◽  
Liquid Phase Epitaxy

scholarly journals Study of optical and luminescent properties of the epitaxial garnet films doped with Ce3+

2021 ◽  
Vol 2103 (1) ◽  
pp. 012114
Author(s):  
N V Vasil’eva ◽  
D A Spassky ◽  
Sh Kurosawa ◽  
S I Omelkov ◽  
V V Kochurikhin ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Optical Absorption ◽  
Single Crystals ◽  
Liquid Phase Epitaxy ◽  
Luminescent Properties ◽  
Single Crystalline ◽  
Garnet Films ◽  
Optical And Luminescent Properties

Abstract Ce-doped (Pb, Gd)3(Al, Ga)5O12 and Ce-doped (Bi, Gd)3(Al, Ga)5O12 single crystalline garnet films were grown using liquid-phase epitaxy method from supercooled PbO–B2O3- and Bi2O3–B2O3-based melt solutions on substrates from Gd3Ga5O12, Gd3(Al, Ga)5O12 and Y3Ga5O12 single crystals. Optical absorption, photo- and cathodoluminescent and scintillation properties of the films were studied. Ce-doped (Pb,Gd)3(Al, Ga)5O12 and Ce-doped (Bi, Gd)3(Al, Ga)5O12 garnet films can be used as a fast phosphor and scintillation screens.

Novel Liquid Phase Epitaxy (LPE) Growth Method for Growing Large GaN Single Crystals: Introduction of the Flux Film Coated-Liquid Phase Epitaxy (FFC-LPE) Method

2003 ◽  
Vol 42 (Part 2, No. 8A) ◽  
pp. L879-L881 ◽  
Author(s):  
Fumio Kawamura ◽  
Masanori Morishita ◽  
Kunimichi Omae ◽  
Masashi Yoshimura ◽  
Yusuke Mori ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Single Crystals ◽  
Liquid Phase Epitaxy ◽  
Growth Method

Growth of Nd-Ca-Ba-Cu-O Tetragonal Superconductors by Liquid-Phase Epitaxy

2003 ◽  
Vol 17 (22) ◽  
pp. 1161-1166
Author(s):  
R. Kita ◽  
T. Suzuki
Keyword(s):  
Chemical Composition ◽  
Liquid Phase ◽  
Single Crystals ◽  
Liquid Phase Epitaxy ◽  
Smooth Surface ◽  
Thick Films ◽  
Tetragonal Structure ◽  
Superconducting Transition ◽  
Transition Width ◽  
Grown Film

Nd-Ca-Ba-Cu-O thick films with a tetragonal structure have been successfully grown on NdGaO 3 (110) single crystals by a liquid-phase epitaxy (LPE) technique using a Nd-BaCu-O powder as a solute, BaCuO 2 -CuO powder as a flux and CaO as a crucible. The films epitaxially grown at temperatures between 1173 K and 1273 K showed perfect a-axis orientated growth. The chemical composition of the grown film was found to be Nd 0.81 Ca 0.18 Ba 2.1 Cu 3.0 O y. The film showed a sharp superconducting transition with T c (onset) = 79.5 K and a transition width of 0.5 K. The a-axis orientated film showed a very smooth surface.

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

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