scholarly journals An Optimal Higher Order Likelihood Distribution based Approach for Strong Edge and High Contrast Restoration

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Liang Zhou ◽  
Arvind Dhaka ◽  
Hasmat Malik ◽  
Amita Nandal ◽  
Satyendra Singh ◽  
...  
Keyword(s):  
Higher Order ◽  
High Contrast

Dual systems for all: Higher-order, role-based relational reasoning as a uniquely derived feature of human cognition

2019 ◽  
Vol 42 ◽  
Author(s):  
Daniel J. Povinelli ◽  
Gabrielle C. Glorioso ◽  
Shannon L. Kuznar ◽  
Mateja Pavlic
Keyword(s):  
Temporal Reasoning ◽  
Higher Order ◽  
Important Case ◽  
Human Cognition ◽  
Relational Reasoning ◽  
Dual Systems ◽  
First Order ◽  
Reasoning System ◽  
Role Based

Abstract Hoerl and McCormack demonstrate that although animals possess a sophisticated temporal updating system, there is no evidence that they also possess a temporal reasoning system. This important case study is directly related to the broader claim that although animals are manifestly capable of first-order (perceptually-based) relational reasoning, they lack the capacity for higher-order, role-based relational reasoning. We argue this distinction applies to all domains of cognition.

Resistance Monitor and Control for Vacuum Evaporation of Metals and Carbon

1976 ◽  
Vol 34 ◽  
pp. 572-573
Author(s):  
Russell L. Steere ◽  
Eric F. Erbe ◽  
J. Michael Moseley
Keyword(s):  
Electronic Device ◽  
Point Sources ◽  
High Contrast ◽  
Variable Resistor ◽  
Quality Of Results ◽  
Low Contrast ◽  
Evaporation Source ◽  
And Control ◽  
At Will

We have designed and built an electronic device which compares the resistance of a defined area of vacuum evaporated material with a variable resistor. When the two resistances are matched, the device automatically disconnects the primary side of the substrate transformer and stops further evaporation.This approach to controlled evaporation in conjunction with the modified guns and evaporation source permits reliably reproducible multiple Pt shadow films from a single Pt wrapped carbon point source. The reproducibility from consecutive C point sources is also reliable. Furthermore, the device we have developed permits us to select a predetermined resistance so that low contrast high-resolution shadows, heavy high contrast shadows, or any grade in between can be selected at will. The reproducibility and quality of results are demonstrated in Figures 1-4 which represent evaporations at various settings of the variable resistor.

Confocal laser microscopy of impregnated central nervous system tissue

1988 ◽  
Vol 46 ◽  
pp. 94-95
Author(s):  
J.N. Turner ◽  
M. Siemens ◽  
D. Szarowski ◽  
D.N. Collins
Keyword(s):  
Electron Microscopy ◽  
Central Nervous System ◽  
Nervous System ◽  
Three Dimensional ◽  
Dimensional Structure ◽  
Confocal Laser ◽  
High Contrast ◽  
Central Nervous System Tissue ◽  
Tissue Samples ◽  
Reflected Light

A classic preparation of central nervous system tissue (CNS) is the Golgi procedure popularized by Cajal. The method is partially specific as only a few cells are impregnated with silver chromate usualy after osmium post fixation. Samples are observable by light (LM) or electron microscopy (EM). However, the impregnation is often so dense that structures are masked in EM, and the osmium background may be undesirable in LM. Gold toning is used for a subtle but high contrast EM preparation, and osmium can be omitted for LM. We are investigating these preparations as part of a study to develop correlative LM and EM (particularly HVEM) methodologies in neurobiology. Confocal light microscopy is particularly useful as the impregnated cells have extensive three-dimensional structure in tissue samples from one to several hundred micrometers thick. Boyde has observed similar preparations in the tandem scanning reflected light microscope (TSRLM).

The CM120 Biotwin: a high-contrast objective lens, optimum cryo-vacuum and improved EDX performance

1995 ◽  
Vol 53 ◽  
pp. 584-585
Author(s):  
Uwe Lücken ◽  
Michael Felsmann ◽  
Wim M. Busing ◽  
Frank de Jong
Keyword(s):  
Life Science ◽  
Focal Length ◽  
Objective Lens ◽  
High Contrast ◽  
Contrast Imaging ◽  
X Ray ◽  
Forming Mechanism ◽  
Similar Image ◽  
High Contrast Imaging ◽  
Low Concentrations

A new microscope for the study of life science specimen has been developed. Special attention has been given to the problems of unstained samples, cryo-specimens and x-ray analysis at low concentrations.A new objective lens with a Cs of 6.2 mm and a focal length of 5.9 mm for high-contrast imaging has been developed. The contrast of a TWIN lens (f = 2.8 mm, Cs = 2 mm) and the BioTWTN are compared at the level of mean and SD of slow scan CCD images. Figure 1a shows 500 +/- 150 and Fig. 1b only 500 +/- 40 counts/pixel. The contrast-forming mechanism for amplitude contrast is dependent on the wavelength, the objective aperture and the focal length. For similar image conditions (same voltage, same objective aperture) the BioTWIN shows more than double the contrast of the TWIN lens. For phasecontrast specimens (like thin frozen-hydrated films) the contrast at Scherzer focus is approximately proportional to the √ Cs.

Quantitative EPMA of nitrogen : A tricky element in the electron-probe microanalyzer

1992 ◽  
Vol 50 (2) ◽  
pp. 1622-1623
Author(s):  
G.F. Bastin ◽  
H.J.M. Heijligers
Keyword(s):  
Background Subtraction ◽  
Electron Probe ◽  
Detection System ◽  
Higher Order ◽  
Light Elements ◽  
Strong Suppression ◽  
Electron Probe Microanalyzer ◽  
Quantitative Epma ◽  
Peak Count ◽  
Lead Stearate

Among the ultra-light elements B, C, N, and O nitrogen is the most difficult element to deal with in the electron probe microanalyzer. This is mainly caused by the severe absorption that N-Kα radiation suffers in carbon which is abundantly present in the detection system (lead-stearate crystal, carbonaceous counter window). As a result the peak-to-background ratios for N-Kα measured with a conventional lead-stearate crystal can attain values well below unity in many binary nitrides . An additional complication can be caused by the presence of interfering higher-order reflections from the metal partner in the nitride specimen; notorious examples are elements such as Zr and Nb. In nitrides containing these elements is is virtually impossible to carry out an accurate background subtraction which becomes increasingly important with lower and lower peak-to-background ratios. The use of a synthetic multilayer crystal such as W/Si (2d-spacing 59.8 Å) can bring significant improvements in terms of both higher peak count rates as well as a strong suppression of higher-order reflections.

Performance and applications of the holography electron microscope

1993 ◽  
Vol 51 ◽  
pp. 1078-1079
Author(s):  
Akira Tonomura
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Phase Measurement ◽  
Electron Holography ◽  
Imaging Method ◽  
High Contrast ◽  
Magnetic Lens ◽  
High Brightness ◽  
Holographic Imaging ◽  
Dynamic Observation

Electron holography is a two-step imaging method. However, the ultimate performance of holographic imaging is mainly determined by the brightness of the electron beam used in the hologram-formation process. In our 350kV holography electron microscope (see Fig. 1), the decrease in the inherently high brightness of field-emitted electrons is minimized by superposing a magnetic lens in the gun, for a resulting value of 2 × 109 A/cm2 sr. This high brightness has lead to the following distinguished features. The minimum spacing (d) of carrier fringes is d = 0.09 Å, thus allowing a reconstructed image with a resolution, at least in principle, as high as 3d=0.3 Å. The precision in phase measurement can be as high as 2π/100, since the position of fringes can be known precisely from a high-contrast hologram formed under highly collimated illumination. Dynamic observation becomes possible because the current density is high.

Effects of Higher-Order Laue Zone reflections on structure images

1993 ◽  
Vol 51 ◽  
pp. 450-451
Author(s):  
H. S. Kim ◽  
S. S. Sheinin
Keyword(s):  
Wave Vector ◽  
Theoretical Calculations ◽  
Reciprocal Lattice ◽  
Image Plane ◽  
Bloch Wave ◽  
Dynamical Theory ◽  
Higher Order ◽  
Lattice Image ◽  
Lattice Vector ◽  
Image Position

The importance of image simulation in interpreting experimental lattice images is well established. Normally, in carrying out the required theoretical calculations, only zero order Laue zone reflections are taken into account. In this paper we assess the conditions for which this procedure is valid and indicate circumstances in which higher order Laue zone reflections may be important. Our work is based on an analysis of the requirements for obtaining structure images i.e. images directly related to the projected potential. In the considerations to follow, the Bloch wave formulation of the dynamical theory has been used.The intensity in a lattice image can be obtained from the total wave function at the image plane is given by: where ϕg(z) is the diffracted beam amplitide given by In these equations,the z direction is perpendicular to the entrance surface, g is a reciprocal lattice vector, the Cg(i) are Fourier coefficients in the expression for a Bloch wave, b(i), X(i) is the Bloch wave excitation coefficient, ϒ(i)=k(i)-K, k(i) is a Bloch wave vector, K is the electron wave vector after correction for the mean inner potential of the crystal, T(q) and D(q) are the transfer function and damping function respectively, q is a scattering vector and the summation is over i=l,N where N is the number of beams taken into account.

Compositional Analysis of III-V Interface Lattice Images

1980 ◽  
Vol 38 ◽  
pp. 318-319
Author(s):  
A. Olsen ◽  
J.C.H. Spence ◽  
P. Petroff
Keyword(s):  
Crystal Structure ◽  
Image Matching ◽  
Compositional Analysis ◽  
Depth Of Field ◽  
Limit Set ◽  
High Contrast ◽  
Resolution Limit ◽  
Fourier Image ◽  
Lattice Images ◽  
True Structure

Since the point resolution of the JEOL 200CX electron microscope is up = 2.6Å it is not possible to obtain a true structure image of any of the III-V or elemental semiconductors with this machine. Since the information resolution limit set by electronic instability (1) u0 = (2/πλΔ)½ = 1.4Å for Δ = 50Å, it is however possible to obtain, by choice of focus and thickness, clear lattice images both resembling (see figure 2(b)), and not resembling, the true crystal structure (see (2) for an example of a Fourier image which is structurally incorrect). The crucial difficulty in using the information between Up and u0 is the fractional accuracy with which Af and Cs must be determined, and these accuracies Δff/4Δf = (2λu2Δf)-1 and ΔCS/CS = (λ3u4Cs)-1 (for a π/4 phase change, Δff the Fourier image period) are strongly dependent on spatial frequency u. Note that ΔCs(up)/Cs ≈ 10%, independent of CS and λ. Note also that the number n of identical high contrast spurious Fourier images within the depth of field Δz = (αu)-1 (α beam divergence) decreases with increasing high voltage, since n = 2Δz/Δff = θ/α = λu/α (θ the scattering angle). Thus image matching becomes easier in semiconductors at higher voltage because there are fewer high contrast identical images in any focal series.

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