Characterization of Single-Photon Avalanche Diode arrays in 150nm CMOS technology

Author(s):  
Hesong Xu ◽  
Leo H.C. Braga ◽  
David Stoppa ◽  
Lucio Pancheri
2011 ◽  
Author(s):  
Justin A. Richardson ◽  
Eric A. G. Webster ◽  
Lindsay A. Grant ◽  
Robert K. Henderson

2019 ◽  
Vol 33 (09) ◽  
pp. 1950099
Author(s):  
Wei Wang ◽  
Guang Wang ◽  
Hongan Zeng ◽  
Yuanyao Zhao ◽  
U-Fat Chio ◽  
...  

A single photon avalanche diode (SPAD) structure designed with standard 180 nm CMOS technology is investigated in detail. The SPAD employs a [Formula: see text]-well anode, rather than the conventional [Formula: see text] layer, and with a [Formula: see text]-well/deep [Formula: see text]-well junction with square shape, a deep retrograde [Formula: see text]-well virtual guard ring which prevents the premature edge avalanche breakdown. The analytical and simulation results show that the SPAD exhibits a uniform electric field distribution in [Formula: see text]-well/deep [Formula: see text]-well junction with the active area of [Formula: see text], and the avalanche breakdown voltage is as low as 9 V, the peak of the photon detection efficiency (PDE) is about 33% at 500 nm, the relatively low dark count rate (DCR) of 0.66 KHz at room temperature is obtained.


2018 ◽  
Vol 24 (6) ◽  
pp. 1-9 ◽  
Author(s):  
Myung-Jae Lee ◽  
Augusto Ronchini Ximenes ◽  
Preethi Padmanabhan ◽  
Tzu-Jui Wang ◽  
Kuo-Chin Huang ◽  
...  

2018 ◽  
Vol 26 (4) ◽  
pp. 255-261 ◽  
Author(s):  
Hanning Mai ◽  
Istvan Gyongy ◽  
Neale A.W. Dutton ◽  
Robert K. Henderson ◽  
Ian Underwood

2018 ◽  
Vol 47 (1) ◽  
pp. 125001
Author(s):  
吴佳骏 WU Jia-jun ◽  
谢生 XIE Sheng ◽  
毛陆虹 MAO Lu-hong ◽  
朱帅宇 ZHU Shuai-yu

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