Scaling trends of single-photon avalanche diode arrays in nanometer CMOS technology

Author(s):  
Justin A. Richardson ◽  
Eric A. G. Webster ◽  
Lindsay A. Grant ◽  
Robert K. Henderson
2011 ◽  
Vol 58 (7) ◽  
pp. 2028-2035 ◽  
Author(s):  
Justin A. Richardson ◽  
Eric A. G. Webster ◽  
Lindsay A. Grant ◽  
Robert K. Henderson

2019 ◽  
Vol 33 (09) ◽  
pp. 1950099
Author(s):  
Wei Wang ◽  
Guang Wang ◽  
Hongan Zeng ◽  
Yuanyao Zhao ◽  
U-Fat Chio ◽  
...  

A single photon avalanche diode (SPAD) structure designed with standard 180 nm CMOS technology is investigated in detail. The SPAD employs a [Formula: see text]-well anode, rather than the conventional [Formula: see text] layer, and with a [Formula: see text]-well/deep [Formula: see text]-well junction with square shape, a deep retrograde [Formula: see text]-well virtual guard ring which prevents the premature edge avalanche breakdown. The analytical and simulation results show that the SPAD exhibits a uniform electric field distribution in [Formula: see text]-well/deep [Formula: see text]-well junction with the active area of [Formula: see text], and the avalanche breakdown voltage is as low as 9 V, the peak of the photon detection efficiency (PDE) is about 33% at 500 nm, the relatively low dark count rate (DCR) of 0.66 KHz at room temperature is obtained.


2018 ◽  
Vol 24 (6) ◽  
pp. 1-9 ◽  
Author(s):  
Myung-Jae Lee ◽  
Augusto Ronchini Ximenes ◽  
Preethi Padmanabhan ◽  
Tzu-Jui Wang ◽  
Kuo-Chin Huang ◽  
...  

2018 ◽  
Vol 47 (1) ◽  
pp. 125001
Author(s):  
吴佳骏 WU Jia-jun ◽  
谢生 XIE Sheng ◽  
毛陆虹 MAO Lu-hong ◽  
朱帅宇 ZHU Shuai-yu

2019 ◽  
Vol 8 (1) ◽  
Author(s):  
Claudio Bruschini ◽  
Harald Homulle ◽  
Ivan Michel Antolovic ◽  
Samuel Burri ◽  
Edoardo Charbon

Abstract Single-photon avalanche diode (SPAD) arrays are solid-state detectors that offer imaging capabilities at the level of individual photons, with unparalleled photon counting and time-resolved performance. This fascinating technology has progressed at a very fast pace in the past 15 years, since its inception in standard CMOS technology in 2003. A host of architectures have been investigated, ranging from simpler implementations, based solely on off-chip data processing, to progressively “smarter” sensors including on-chip, or even pixel level, time-stamping and processing capabilities. As the technology has matured, a range of biophotonics applications have been explored, including (endoscopic) FLIM, (multibeam multiphoton) FLIM-FRET, SPIM-FCS, super-resolution microscopy, time-resolved Raman spectroscopy, NIROT and PET. We will review some representative sensors and their corresponding applications, including the most relevant challenges faced by chip designers and end-users. Finally, we will provide an outlook on the future of this fascinating technology.


2016 ◽  
Vol 89 (1) ◽  
pp. 69-76 ◽  
Author(s):  
Imane Malass ◽  
Wilfried Uhring ◽  
Jean-Pierre Le Normand ◽  
Norbert Dumas ◽  
Foudil Dadouche

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