Low frequency noise characteristics in p-Type MOSFET with multilayer WSe2 channel and Al2O3 back gate dielectric

2017 ◽  
Author(s):  
Hui Shen ◽  
Huiwen Yuan ◽  
Sitong Bu ◽  
Mingyue He ◽  
Daming Huang
Keyword(s):  
Gate Dielectric ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Back Gate ◽  
Noise Characteristics ◽  
P Type

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

2014 ◽  
Vol 778-780 ◽  
pp. 428-431 ◽  
Author(s):  
Lucy Claire Martin ◽  
Hua Khee Chan ◽  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
The Impact

Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and the resulting density of interface traps at the semiconductor-dielectric interface in order to examine the impact on device performance. The results show that the low frequency noise characteristics in p-channel 4H-SiC MOSFETs in weak inversion are in agreement with the McWhorter model and are dominated by the interaction of channel carriers with interface traps at the gate dielectric/semiconductor interface.

Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors

2005 ◽  
Vol 86 (8) ◽  
pp. 082102 ◽  
Author(s):  
Bigang Min ◽  
Siva Prasad Devireddy ◽  
Zeynep Çelik-Butler ◽  
Ajit Shanware ◽  
Keith Green ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes

2021 ◽  
Vol 42 (3) ◽  
pp. 442-445
Author(s):  
Dongseok Kwon ◽  
Wonjun Shin ◽  
Jong-Ho Bae ◽  
Suhwan Lim ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

2009 ◽  
Vol 105 (12) ◽  
pp. 124504 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Sung Hun Jin ◽  
M. S. Shur ◽  
Mun-Soo Park
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film

Low-Frequency Noise Characteristics in Strained-Si nMOSFETs

2007 ◽  
Vol 28 (1) ◽  
pp. 36-38 ◽  
Author(s):  
Yen Ping Wang ◽  
San Lein Wu ◽  
Shoou Jinn Chang
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Strained Si ◽  
Noise Characteristics
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