scholarly journals Electrical characterization of aluminum (Al) thin films measured by using four- point probe method

2013 ◽  
Vol 8 (2) ◽  
pp. 31-36 ◽  
Author(s):  
GP Panta ◽  
DP Subedi
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Electrical Characterization ◽  
Probe Method ◽  
Glass Substrates ◽  
Engineering And Technology

This paper reports the results of electrical characterization of aluminum thin films. Uniform Al thin films were deposited by physical vapor deposition (PVD) technique on glass substrates. The electrical resistivity of the films as a function of film thickness was studied. These parameters have been measured by four-point probe method. The electrical resistivity was obtained by the measurement of current (in mA) and voltage in (mV) through the probe. The results showed that resistivity of the film decreases linearly with the film thickness in the range of the thickness studied in this work. Kathmandu University Journal of Science, Engineering and Technology Vol. 8, No. II, December, 2012, 31-36 DOI: http://dx.doi.org/10.3126/kuset.v8i2.7322

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Deposition and Characterization of Carbon Nitride Films by Laser Processed Methods

1998 ◽  
Vol 526 ◽  
Author(s):  
Ashok Kumar ◽  
R. Alexandrescu ◽  
Michael A. George
Keyword(s):  
Thin Films ◽  
Comparative Analysis ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Carbon Nitride ◽  
Pyrolytic Graphite ◽  
Chemical Vapor ◽  
Nitrogen Atmosphere ◽  
Graphite Target

AbstractLaser assisted methods such as laser physical vapor deposition (LPVD) and laser induced chemical vapor deposition (LCVD) have been utilized to grow carbon nitride (CNx) films on various substrates. It has been shown that the both techniques produce good quality thin films of CNx. In LPVD, a laser beam (λ= 248 nm) has been used to ablate the pyrolytic graphite target in nitrogen atmosphere, where as CO2 laser was to irradiate carbon-nitrogen containing mixtures such as C2H2/N2O/NH3 in LCVD method. A comparative analysis will be presented in terms of structural properties of CNx films prepared by both techniques.

scholarly journals Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
M. R. Khanlary ◽  
E. Salavati
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Optical Band Gap ◽  
Xrd Analysis ◽  
High Energy ◽  
Properties And Characterization ◽  
Different Doses

Physical vapor deposition of tin-doped lead selenide (Sn/PbSe) thin films on SiO2glass is described. Interaction of high-energy Ar+ions bombardment on the doped PbSe films is discussed by XRD analysis. The improvement of optical band gap of Sn/PbSe films irradiated by different doses of irradiation was studied using transmission spectroscopy.

ELECTRICAL CHARACTERIZATION OF EPITAXIAL BI:2201

2002 ◽  
Vol 16 (04) ◽  
pp. 127-133 ◽  
Author(s):  
A. V. POP ◽  
G. ILONCA ◽  
MARIANA POP ◽  
R. DELTOUR
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Normal State ◽  
Electrical Resistance ◽  
Electrical Characterization ◽  
Dc Magnetron Sputtering ◽  
Normal State Resistivity ◽  
Partial Pressures

Bi2.1Sr1.9CuOy thin films (Bi:2201) were deposited onto heated single crystal (100) MgO substrates using inverted cylindrical DC magnetron sputtering with different partial pressures of oxygen in a sputtering gas. The behavior of the normal state resistivity function of temperature is strongly influenced by the composition of sputtering gas used in thin films synthesis. Near the transition to the superconducting state, electrical resistivity changes strongly from "metallic" to insulator (MI). The origin for the increase of electrical resistance was analyzed using some models for the localization of mobile carriers. A good linearity is obtained for ln R as a function of Tα for α = 1/10 and for R as a function of ln T. The last behavior agrees with the pinning and fragmentation of 1D stripes in CuO2 planes.

scholarly journals Effect of Solution Spray Rate on the Properties of Chemically Sprayed ZnO:In Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Merike Kriisa ◽  
Malle Krunks ◽  
Erki Kärber ◽  
Mart Kukk ◽  
Valdek Mikli ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Film Thickness ◽  
Carrier Concentration ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Spray Solution ◽  
Chemical Spray ◽  
Spray Rate

ZnO:In thin films were grown from 100 mL of spray solution on glass substrates by chemical spray atTs=400°C using solution spray rates of 0.5–6.7 mL/min. Zinc acetate and indium(III)chloride were used as Zn and In sources, respectively, with [In]/[Zn] = 3 at.%. Independent of solution spray rate, the crystallites in ZnO:In films grow preferentially in the (101) plane parallel to the substrate. The solution spray rate influences the surface morphology, grain size, film thickness, and electrical and optical properties. According to SEM and AFM studies, sharp-edged pyramidal grains and canvas-resembling surfaces are characteristic of films grown at spray rates of 0.5 and 3.3 mL/min, respectively. To obtain films with comparable film thickness and grain size, more spray solution should be used at low spray rates. The electrical resistivity of sprayed ZnO:In films is controlled by the solution spray rate. The carrier concentration increases from2·1019 cm−3to1·1020 cm−3when spray rate is increased from 0.5 mL/min to 3.3 mL/min independent of the film thickness; the carrier mobilities are always lower in slowly grown films. Sprayed ZnO:In films transmit 75–80% of the visible light while the increase in solution spray rate from 0.5 mL/min to 3.3 mL/min decreases the transmittance in the NIR region and increases the band gap in accordance with the increase in carrier concentration. Lower carrier concentration in slowly sprayed films is likely due to the indium oxidation.

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