A complementary selective epitaxial growth (CSEG) process and its application to high speed bipolar transistors

AbstractOne of the major challenges affecting the performance of Npn AlGaN/GaN heterojunction bipolar transistors (HBTs) is the high base access resistance, which is comprised of the base contact resistance and the base bulk resistance. A novel concept is proposed to reduce the base access resistance in Npn AlGaN/GaN HBTs by employing polarization-enhanced contacts and selective epitaxial growth of the base and emitter. In addition, this technique reduces the exposed base surface area, which results in a lower surface recombination current. Such a structure would enable better performance of AlGaN/GaN HBTs in terms of higher current gain and a lower offset voltage. Theoretical calculations on polarization-enhanced contacts predict p-type specific contact resistance lower than 10-5 Ωcm2. Experimental results using transmission line measurement (TLM) technique yield specific contact resistances of 5.6×10-4 Ωcm2 for polarization-enhanced p-type contacts and 7.8×10-2 Ωcm2 for conventional p-type contacts.

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Vertical bipolar transistors fabricated in local silicon on insulator films prepared using confined lateral selective epitaxial growth (CLSEG)

IEEE Transactions on Electron Devices ◽

10.1109/16.62284 ◽

1990 ◽

Vol 37 (11) ◽

pp. 2336-2342 ◽

Cited By ~ 9

Author(s):

P.J. Schubert ◽

G.W. Neudeck

Keyword(s):

Epitaxial Growth ◽

Bipolar Transistors ◽

Silicon On Insulator ◽

Selective Epitaxial Growth

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Si 1−x Ge x selective epitaxial growth for ultra-high-speed self-aligned HBTs

Thin Solid Films ◽

10.1016/s0040-6090(00)00869-5 ◽

2000 ◽

Vol 369 (1-2) ◽

pp. 358-361 ◽

Cited By ~ 7

Author(s):

Katsuya Oda ◽

Eiji Ohue ◽

Masamichi Tanabe ◽

Hiromi Shimamoto ◽

Katsuyoshi Washio

Keyword(s):

Epitaxial Growth ◽

High Speed ◽

Selective Epitaxial Growth ◽

Ultra High Speed

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TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138713 ◽

1995 ◽

Vol 53 ◽

pp. 468-469

Author(s):

N. David Theodore ◽

Donald Y.C Lie ◽

J. H. Song ◽

Peter Crozier

Keyword(s):

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

Integrated Circuit ◽

High Speed ◽

Room Temperature ◽

Strain Relaxation ◽

Bipolar Transistors ◽

Sige Hbt ◽

Integrated Circuit Manufacturing ◽

Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

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