A 280-325 GHz Frequency Multiplier Chain With 2.5 dBm Peak Output Power

Author(s):  
Peigen Zhou ◽  
Jixin Chen ◽  
Pinpin Yan ◽  
Zhe Chen ◽  
Debin Hou ◽  
...  
Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1490
Author(s):  
Yuhang Li ◽  
Jin Meng ◽  
Dehai Zhang ◽  
Haotian Zhu

The development of a millimeter-wave unbalanced frequency tripler based on the nonlinear characteristics of planar Schottky varactors is presented. The entire module is designed by hybrid integration. A frequency multiplier circuit model was established to reflect the influence of diode parameters and the impedance matching on the multiplier in different frequency bands. The effect of junction imbalance on the output power of the frequency multiplier was investigated and the multiplier was improved based on the basic design. The addition of a cut microstrip stub in the improved diode unit reduced the impact of a power imbalance on frequency multiplier performance. The characteristics of the multiplier circuit were analyzed by the full-wave electromagnetic simulation of the three-dimensional structure and the harmonic balance simulation of the circuit. Test results showed that the peak output power of the improved frequency tripler was 12.6 mW at 277 GHz with an input power of 200 mW, an effective 12% improvement over the basic design.


Electronics ◽  
2021 ◽  
Vol 10 (16) ◽  
pp. 1948
Author(s):  
Shasha Li ◽  
Feng Zhang ◽  
Cunjun Ruan ◽  
Yiyang Su ◽  
Pengpeng Wang

In this paper, we propose a high-order mode sheet beam extended interaction klystron (EIK) operating at G-band. Through the study of electric field distribution, we choose TM31 2π mode as the operating mode. The eigenmode simulation shows that the resonant frequency of the modes adjacent to the operating mode is far away from the central frequency, so there is almost no mode competition in our high mode EIK. In addition, by studying the sensitivity of the related geometry parameters, we conclude that the height of the coupling cavity has a great influence on the effective characteristic impedance, and the width of the gap mainly affects the working frequency. Therefore, it is necessary to strictly control the fabrication tolerance within 2 μm. Finally, the RF circuit using six barbell multi-gap cavities is determined, with five gaps for the input cavity and idler cavities and seven gaps for the output cavity. To expand the bandwidth, the stagger tuning method is adopted. Under the conditions of a voltage of 16.5 kV, current of 0.5 A and input power of 0.2 W, the peak output power of 650 W and a 3-dB bandwidth of 700 MHz are achieved without any self-oscillation.


2021 ◽  
Author(s):  
Ruibing Dong ◽  
Shinsuke Hara ◽  
Issei Watanabe ◽  
Satoru Tanoi ◽  
Tatsuo Hagino ◽  
...  

Circuit World ◽  
2019 ◽  
Vol 46 (1) ◽  
pp. 1-5
Author(s):  
Yanfeng Fang ◽  
Yijiang Zhang

Purpose This paper aims to implement a new high output power fully integrated 23.1 to 27.2 GHz gallium arsenide heterojunction bipolar transistor power amplifier (PA) to meet the stringent linearity requirements of LTE systems. Design/methodology/approach The direct input power dividing technique is used on the chip. Broadband input and output matching techniques are used for broadband Doherty operation. Findings The PA achieves a small-signal gain of 22.8 dB at 25.1 GHz and a saturated output power of 24.3 dBm at 25.1 GHz with a maximum power added efficiency of 31.7%. The PA occupies 1.56 mm2 (including pads) and consumes a maximum current of 79.91 mA from a 9 V supply. Originality/value In this paper, the author proposed a novel direct input dividing technique with broadband matching circuits using a low Q output matching technique, and demonstrated a fully-integrated Doherty PA across frequencies of 23.1∼27.2 GHz for long term evolution-license auxiliary access (LTE-LAA) handset applications.


2019 ◽  
Vol 49 (10) ◽  
pp. 901-904 ◽  
Author(s):  
S V Alekseev ◽  
N G Ivanov ◽  
V F Losev ◽  
G A Mesyats ◽  
L D Mikheev ◽  
...  

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