A G-Band High Output Power and Wide Bandwidth Sheet Beam Extended Interaction Klystron Design Operating at TM31 with 2π Mode

In this paper, we propose a high-order mode sheet beam extended interaction klystron (EIK) operating at G-band. Through the study of electric field distribution, we choose TM31 2π mode as the operating mode. The eigenmode simulation shows that the resonant frequency of the modes adjacent to the operating mode is far away from the central frequency, so there is almost no mode competition in our high mode EIK. In addition, by studying the sensitivity of the related geometry parameters, we conclude that the height of the coupling cavity has a great influence on the effective characteristic impedance, and the width of the gap mainly affects the working frequency. Therefore, it is necessary to strictly control the fabrication tolerance within 2 μm. Finally, the RF circuit using six barbell multi-gap cavities is determined, with five gaps for the input cavity and idler cavities and seven gaps for the output cavity. To expand the bandwidth, the stagger tuning method is adopted. Under the conditions of a voltage of 16.5 kV, current of 0.5 A and input power of 0.2 W, the peak output power of 650 W and a 3-dB bandwidth of 700 MHz are achieved without any self-oscillation.

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A broadband 23.1 ∼ 27.2 GHz doherty power amplifier with peak output power of 24.3 dBm

Circuit World ◽

10.1108/cw-05-2019-0048 ◽

2019 ◽

Vol 46 (1) ◽

pp. 1-5

Author(s):

Yanfeng Fang ◽

Yijiang Zhang

Keyword(s):

Output Power ◽

Power Amplifier ◽

Input Power ◽

Content Type ◽

Fully Integrated ◽

Power Added Efficiency ◽

Peak Output Power ◽

Saturated Output Power ◽

Direct Input ◽

Matching Techniques

Purpose This paper aims to implement a new high output power fully integrated 23.1 to 27.2 GHz gallium arsenide heterojunction bipolar transistor power amplifier (PA) to meet the stringent linearity requirements of LTE systems. Design/methodology/approach The direct input power dividing technique is used on the chip. Broadband input and output matching techniques are used for broadband Doherty operation. Findings The PA achieves a small-signal gain of 22.8 dB at 25.1 GHz and a saturated output power of 24.3 dBm at 25.1 GHz with a maximum power added efficiency of 31.7%. The PA occupies 1.56 mm2 (including pads) and consumes a maximum current of 79.91 mA from a 9 V supply. Originality/value In this paper, the author proposed a novel direct input dividing technique with broadband matching circuits using a low Q output matching technique, and demonstrated a fully-integrated Doherty PA across frequencies of 23.1∼27.2 GHz for long term evolution-license auxiliary access (LTE-LAA) handset applications.

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Active frequency-tripler MMICs for 300 GHz signal generation

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078712000165 ◽

2012 ◽

Vol 4 (3) ◽

pp. 259-266 ◽

Cited By ~ 6

Author(s):

Ulrich Johannes Lewark ◽

Axel Tessmann ◽

Hermann Massler ◽

Sandrine Wagner ◽

Arnulf Leuther ◽

...

Keyword(s):

Integrated Circuits ◽

Output Power ◽

Second Harmonic ◽

High Electron Mobility Transistor ◽

Input Power ◽

High Electron ◽

Frequency Multipliers ◽

Average Output ◽

Peak Output Power ◽

Power Content

Two frequency-tripler monolithic microwave integrated circuits (MMICs) reaching sub-millimeter-wave output frequencies of 315 GHz are presented. The convenient integration of transistor–based field effect transistor (FET) frequency multipliers into multifunctional MMICs is shown by integration of a single–stage frequency-tripler with a buffer amplifier generating −0.5 dBm of peak output power at 288. Without post-amplification an average output power of −10.1 dBm in the output frequency range from 285 to 315 is measured with 10 dBm of input power. The 3-dB bandwidth is more than 30 GHz and could not be determined exactly due to the measurement setup. Both MMICs are realized in a 50 nm metamorphic high electron mobility transistor (HEMT) transistor technology. A multiple power-meter measurement technique including a waveguide filter is used to measure accurately the second harmonic power content within the output spectrum.

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The Development of Frequency Tripler Based on Six-Anode Schottky Varactors

Micromachines ◽

10.3390/mi12121490 ◽

2021 ◽

Vol 12 (12) ◽

pp. 1490

Author(s):

Yuhang Li ◽

Jin Meng ◽

Dehai Zhang ◽

Haotian Zhu

Keyword(s):

Output Power ◽

Impedance Matching ◽

Three Dimensional ◽

Input Power ◽

Frequency Multiplier ◽

Dimensional Structure ◽

Basic Design ◽

Peak Output Power ◽

The Impact ◽

Multiplier Circuit

The development of a millimeter-wave unbalanced frequency tripler based on the nonlinear characteristics of planar Schottky varactors is presented. The entire module is designed by hybrid integration. A frequency multiplier circuit model was established to reflect the influence of diode parameters and the impedance matching on the multiplier in different frequency bands. The effect of junction imbalance on the output power of the frequency multiplier was investigated and the multiplier was improved based on the basic design. The addition of a cut microstrip stub in the improved diode unit reduced the impact of a power imbalance on frequency multiplier performance. The characteristics of the multiplier circuit were analyzed by the full-wave electromagnetic simulation of the three-dimensional structure and the harmonic balance simulation of the circuit. Test results showed that the peak output power of the improved frequency tripler was 12.6 mW at 277 GHz with an input power of 200 mW, an effective 12% improvement over the basic design.

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Analysis of the Soft-Switching Tuning Effect on the Figures of Merit Involved in the Design of a Class-E Amplifier with Finite DC-Feed Inductance

Electronics ◽

10.3390/electronics10141705 ◽

2021 ◽

Vol 10 (14) ◽

pp. 1705

Author(s):

Ingrid Casallas ◽

Robert Urbina ◽

Carlos-Ivan Paez-Rueda ◽

Gabriel Perilla ◽

Manuel Pérez ◽

...

Keyword(s):

Case Studies ◽

Output Power ◽

Soft Switching ◽

Figures Of Merit ◽

Tuning Method ◽

Tuning Process ◽

Tuning Methods ◽

Zero Voltage ◽

Voltage Switching ◽

Class E

This paper explores the design of a Class-E amplifier with finite DC-feed inductance using three tuning methods. Furthermore, this work quantifies the impacts of the tuning process (referred to in this paper as the tuning effect) on the main figures of merit (FoMs) of this amplifier. The tuning goals were to guarantee two conditions: zero voltage and zero voltage derivative switching (i.e., soft-switching tuning). To the best of the authors’ knowledge, systematic tuning methods have not been analyzed before for this amplifier topology. Two of them are based on the iterative component tuning process, and they have been explored previously in the design of the conventional class-E amplifier with an RF choke inductance. The last tuning method explores the simultaneous adjustment of the control signal period and one amplifier capacitor. The analyzed tuning methods were validated by extensive simulations of case studies, which were designed following the power specifications of the Qi standard. In 100% and 96% of the case studies, zero voltage switching (ZVS) and zero-derivative voltage switching (ZDS) were achieved, respectively. Furthermore, we identified an unexpected behavior in the tuning process (referred to in this paper as the turning point), which consisted of a change of the expected trend of the soft-switching (i.e., ZVS and ZDS) point, and it occurred in 21% of the case studies. When this behavior occurred and converged to at least ZVS, the tuning process required more iterations and a large number of tuning variables. Additionally, after the tuning process, the total harmonic distortion and output power capacity were improved (i.e., in 78% and 61% of the case studies, respectively), whereas the output power, drain and added power efficiencies deteriorated (i.e., in 83%, 61% and 65% of the case studies, respectively) in the overall case studies. However, we could not identify an improvement in the overall FoMs related to the soft-switching tuning. Furthermore, the tuning impact was significant and produced some improvements and some deleterious effects for the FoMs in each case study, without a clear trend by FoMs or by tuning method. Therefore, the amplifier designer may choose the more favorable tuning method and the related FoM trade-offs for the required design specifications.

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235–275 GHz (x16) frequency multiplier chains with up to 0 dBm peak output power and low DC power consumption

2014 IEEE Radio Frequency Integrated Circuits Symposium ◽

10.1109/rfic.2014.6851691 ◽

2014 ◽

Cited By ~ 14

Author(s):

Neelanjan Sarmah ◽

Bernd Heinemann ◽

Ullrich R. Pfeiffer

Keyword(s):

Power Consumption ◽

Output Power ◽

Frequency Multiplier ◽

Peak Output Power ◽

Dc Power

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Input Power Assignment of Multicarrier Systems from Given Output Power Levels

IRE Transactions on Communications Systems ◽

10.1109/tcom.1979.1094295 ◽

1979 ◽

Vol 27 (10) ◽

pp. 1577-1584 ◽

Cited By ~ 1

Author(s):

P. Chang ◽

O. Shimbo

Keyword(s):

Output Power ◽

Input Power ◽

Power Assignment ◽

Multicarrier Systems

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Excilamp producing up to 130 W of output power and possibility of its applications

Laser and Particle Beams ◽

10.1017/s0263034600010636 ◽

1997 ◽

Vol 15 (2) ◽

pp. 339-345 ◽

Cited By ~ 10

Author(s):

M.I. Lomaev ◽

A.N. Panchenko ◽

V.S. Skakun ◽

E.A. Sosnin ◽

V.F. Tarasenko ◽

...

Keyword(s):

Experimental Study ◽

Glow Discharge ◽

Output Power ◽

Average Power ◽

Wavelength Region ◽

Input Power ◽

Exciplex Lamp

Results of an experimental study of a coaxial exciplex lamp pumped by glow discharge are presented. An average power of radiation in the wavelength region below 250 nm and as high as about 130 W has been achieved. Efficiency of the excilamp operation based on input power of 14% was demonstrated. The possibility of applications of this excilamp is discussed.

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Design and Numerical Analysis of an All-optical 4-channel Power Splitter in E, S, C, L, and U Bands via Nano-line Defects in Photonic Crystal

Journal of Optical Communications ◽

10.1515/joc-2017-0194 ◽

2020 ◽

Vol 41 (3) ◽

pp. 241-247

Author(s):

Saeed Olyaee ◽

Mahmood Seifouri ◽

Ebrahim Azimi Sourani ◽

Vigneswaran Dhasarathan

Keyword(s):

Photonic Crystal ◽

Band Gap ◽

Output Power ◽

Wavelength Range ◽

Fdtd Method ◽

Input Power ◽

Square Lattice ◽

Power Splitter ◽

All Optical ◽

Line Defects

AbstractIn the present study, the propagation of electromagnetic waves in a square-lattice photonic crystal waveguide (PCW) is investigated using the finite-difference time-domain (FDTD) method. Then, the plane wave expansion (PWE) method is utilized to calculate the 2D photonic crystal band structure. To realize the desired waveguide, nano-line defects are introduced. The results of the numerical simulations and optimization scanning indicate that for the proposed photonic crystal structure consisting of silicon circular dielectric rods with a radius of 84 nm, a band gap can be achieved in the wavelength range of 1.34 μm<λ<1.93 μm. This wavelength range covers E, S, C, L, and U communication bands. Subsequently, by eliminating the rods in four parts of the structure, an all-optical 4-channel splitter can be designed. The numerical simulation results indicate that by coupling a light source to the main path of the structure and propagating it through each channel, the powers of the 4 output facets become approximately the same. The output power of channels 1 and 2 equals to 24.5 % of the input power, and the output power of channels 3 and 4 is 21 % of the input power and the remaining 9 % is lost in the structure as the leakage power. Since the 1.55 μm wavelength is within the band gap, that is the telecommunication band C, this device can be used as a power splitter.

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