Multi-level Active Gate Driver for SiC MOSFETs with Paralleling Operation

2021 ◽  
Author(s):  
Yuqi Wei ◽  
Liyang Du ◽  
Xia Du ◽  
Alan Mantooth
Keyword(s):  
Gate Driver ◽  
Multi Level

scholarly journals Gate Driver Circuits With Discrete Components For GaN-based Multi-Level Multi-Inductor Hybrid Converter

2021 ◽  
Author(s):  
Ratul Das ◽  
Hanh-Phuc Le
Keyword(s):  
Power Converter ◽  
Multilevel Converters ◽  
Power Mosfets ◽  
Trade Offs ◽  
Power Modules ◽  
Power Switches ◽  
Gate Driver ◽  
Multi Level ◽  
Gate Driving ◽  
Gate Drivers

<p>Gate driver circuits to ensure proper turn-on and turn-off for power switches are essential parts of a power converter design. They become even more important for multilevel converters where multiple switches are operated at active voltage domains. Recent favorable use of Gallium-Nitride (GaN) devices for power switches makes gate driving even more challenging as the switch performance and reliability are more sensitive to variations of the gate driving signals and power compared with traditional power MOSFETs. This paper discusses gate driving methods using a multi-level multi-inductor hybrid (MIH) converter as the demonstration prototype to address two key challenges in designing gate drivers: 1) providing level-shifted PWM signals to active voltage domains and 2) powering schemes for gate driver circuits. To solve the first challenge, an optimal use of available half-bridge drivers is devised to eliminate the need for separate signal isolator chips. This method was implemented and verified in a MIH converter prototype for 48-V Point-of-Load (PoL) applications using three different powering schemes for gate drivers, including isolated power modules, regulated supplies from switch blocking voltages, and cascaded bootstrap power rails with regulations. The gate driver techniques and powering schemes are compared experimentally in terms of performance to illustrate their benefits and trade-offs.</p>

scholarly journals FPGA Based Symmetrical Multi Level Inverter with Reduced Gate Driver Circuits

2018 ◽  
Vol 6 (1) ◽  
pp. 53
Author(s):  
G. Durga Prasad ◽  
V Jegathesan
Keyword(s):  
High Voltage ◽  
High Power ◽  
Output Voltage ◽  
Experimental Results ◽  
Sinusoidal Wave ◽  
Font Size ◽  
Multilevel Converters ◽  
Dc Voltage ◽  
Gate Driver ◽  
Multi Level

<span style="font-size: 9pt; font-family: 'Times New Roman', serif;">Multilevel converters tender advantages in terms of the output waveform quality due to the increased number of levels used in the output voltage modulation and have been widely accepted for high-power high-voltage applications.  This paper introduces topology in multilevel dc link inverter (MLDCLI), which can significantly reduce the switch count and improve the performance.<strong> </strong>The preferred topology provides a dc voltage with the shape of a staircase approximating the rectified shape of a commanded sinusoidal wave, to the bridge inverter, which in turn gives the required alternating waveform<strong>.</strong> This topology requires fewer components compared to traditional Multi level Inverters (MLI).Therefore, the overall cost and complexity are significantly reduced particularly for higher output voltage levels. Finally, </span><span style="font-size: 9pt; font-family: 'Times New Roman', serif;" lang="EN-GB">Matlab/Simulink and XILINX are used as a simulation and compiler architecture of control circuit embedded in FPGA. Simulation and experimental results for fifteen-level inverter are presented for validation</span><span style="font-size: 9pt; font-family: 'Times New Roman', serif;">.</span>

scholarly journals Gate Driver Circuits With Discrete Components For GaN-based Multi-Level Multi-Inductor Hybrid Converter

2021 ◽  
Author(s):  
Ratul Das ◽  
Hanh-Phuc Le
Keyword(s):  
Power Converter ◽  
Multilevel Converters ◽  
Power Mosfets ◽  
Trade Offs ◽  
Power Modules ◽  
Power Switches ◽  
Gate Driver ◽  
Multi Level ◽  
Gate Driving ◽  
Gate Drivers

<p>Gate driver circuits to ensure proper turn-on and turn-off for power switches are essential parts of a power converter design. They become even more important for multilevel converters where multiple switches are operated at active voltage domains. Recent favorable use of Gallium-Nitride (GaN) devices for power switches makes gate driving even more challenging as the switch performance and reliability are more sensitive to variations of the gate driving signals and power compared with traditional power MOSFETs. This paper discusses gate driving methods using a multi-level multi-inductor hybrid (MIH) converter as the demonstration prototype to address two key challenges in designing gate drivers: 1) providing level-shifted PWM signals to active voltage domains and 2) powering schemes for gate driver circuits. To solve the first challenge, an optimal use of available half-bridge drivers is devised to eliminate the need for separate signal isolator chips. This method was implemented and verified in a MIH converter prototype for 48-V Point-of-Load (PoL) applications using three different powering schemes for gate drivers, including isolated power modules, regulated supplies from switch blocking voltages, and cascaded bootstrap power rails with regulations. The gate driver techniques and powering schemes are compared experimentally in terms of performance to illustrate their benefits and trade-offs.</p>

scholarly journals Prototipe Power Supply Gate driver untuk Multilevel Inverter dengan Menggunakan Flyback Converter Multi Output

2020 ◽  
Vol 19 (01) ◽  
pp. 33-42
Author(s):  
Novie Ayub Windarko ◽  
Akhmad Puryanto ◽  
Rachma Prilian Eviningsih ◽  
Moh. Zaenal Efendi ◽  
Eka Prasetyono ◽  
...  
Keyword(s):  
Power Supply ◽  
Multilevel Inverter ◽  
Flyback Converter ◽  
Turn On ◽  
Gate Driver ◽  
Multi Level ◽  
Switching Devices

Dengan perkembangan konverter elektronika daya, kebutuhan untuk memperkecil ukuran dan keandalan semakin meningkat. Dengan meningkatnya frekuensi switching pada konverter, maka dv/dt yang tinggi dapat menyebabkan kesalahan dalam turn-on ataupun turn-off switching devices. Masalah-masalah tersebut dapat diatasi dengan menerapkan tegangan bias negatif untuk melakukan turn-off switching devices. Makalah ini mengusulkan prototipe power supply gate driver yang dikhususkan untuk Multi Level Inverter (MLI). Sebuah prototipe power supply gate driver yang menggunakan satu unit konverter flyback dengan multi output untuk tegangan bias positif dan negatif, serta terisolasi galvanis sebanyak switching devices MLI. Dengan menggunakan topologi dasar flyback maka konverter ini memiliki isolasi galvanis melalui trafo frekuensi tinggi. Dari hasil eksperimen proses switching bisa berubah dari kondisi dari on menuju off dan dari off menuju on bisa berjalan secara sempurna.

scholarly journals Multi-level active gate driver for SiC MOSFETs

2017 ◽  
Author(s):  
Harry C. P. Dymond ◽  
Dawei Liu ◽  
Jianjing Wang ◽  
Jeremy J. O. Dalton ◽  
Bernard H. Stark
Keyword(s):  
Gate Driver ◽  
Multi Level

scholarly journals A Multi-level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Yaodong Zhu ◽  
Yongsheng Huang ◽  
Haifu Wu ◽  
Zakiud Din ◽  
Jianzhong Zhang
Keyword(s):  
Silicon Carbide ◽  
Gate Driver ◽  
Multi Level

Verlaufsanalyse wöchentlicher Selbst- und Fremdeinschätzungen in der Langzeittherapie suchtkranker Jugendlicher

2019 ◽  
Vol 47 (2) ◽  
pp. 126-137
Author(s):  
Ferdinand Keller ◽  
Tatjana Stadnitski ◽  
Jakob Nützel ◽  
Renate Schepker
Keyword(s):  
Allen Vier ◽  
Multi Level

Zusammenfassung. Fragestellung: Über Veränderungen in der emotionalen Befindlichkeit von Jugendlichen während einer Suchttherapie ist wenig bekannt. Methode: Die Jugendlichen füllten wöchentlich einen entsprechenden Fragebogen aus, analog ihre Bezugsbetreuer eine parallelisierte Kurzfassung. Von 42 Jugendlichen liegen insgesamt 853 Bogen und von den Bezugsbetreuern 708 Bogen vor. Die Fragebogen wurden zunächst faktorenanalytisch hinsichtlich ihrer Dimensionalität ausgewertet, anschließend wurden gruppenbezogene Verlaufsanalysen (Multi-Level-Modelle) und Abhängigkeitsanalysen auf Einzelfallebene (Zeitreihenanalysen) durchgeführt. Ergebnisse: Im Jugendlichenfragebogen ergaben sich vier Faktoren: negative Befindlichkeit, Wertschätzung von Therapie/Betreuung, Motivation und Suchtdynamik. Die Übereinstimmung zwischen den Jugendlichen- und der (einfaktoriellen) Betreuereinschätzung fiel insgesamt niedrig bis mäßig aus, brachte aber auf Einzelfallebene differenziertere Ergebnisse. Im Verlauf nahmen die Werte auf allen vier Jugendlichenskalen ab. Einzig der Verlauf der Wertschätzung in der Eingewöhnungsphase war prädiktiv für den späteren Abbruch der Maßnahme: Bei den Abbrechern nahm die Wertschätzung ab, während sie bei den Beendern initial stieg. Schlussfolgerungen: Der bedeutsamste Faktor in Bezug auf die Therapiebeendigung suchtkranker Jugendlicher scheint die Wertschätzung von Therapie/Betreuung zu sein, während die Motivation jugendtypische Schwankungen aufweist. Der Suchtdynamik kam eine deutlich weniger bedeutende Rolle zu als allgemein angenommen. Programme in der Langzeittherapie sollten die Wertschätzung von Therapie/Betreuung künftig mehr fokussieren als die Suchtdynamik.

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