scholarly journals A Multi-level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Yaodong Zhu ◽  
Yongsheng Huang ◽  
Haifu Wu ◽  
Zakiud Din ◽  
Jianzhong Zhang
Keyword(s):  
Silicon Carbide ◽  
Gate Driver ◽  
Multi Level

scholarly journals Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch

2021 ◽  
Vol 12 (3) ◽  
pp. 1293
Author(s):  
Martin J. Carra ◽  
Hernan Tacc ◽  
Jose Lipovetzky
Keyword(s):  
Silicon Carbide ◽  
Performance Evaluation ◽  
Gallium Nitride ◽  
Switching Process ◽  
Control Power ◽  
Power Switch ◽  
Power Switches ◽  
Gate Driver ◽  
Output Losses

<p>Silicon Carbide (SiC), new power switches (PSW) require new driver circuits which can take advantage of their new capabilities. In this paper a novel Gallium Nitride (GaN) based gate driver is proposed as a solution to control SiC power switches. The proposed driver is implemented and is performance compared with its silicon (Si) counterparts on a hard switching environment. A thorough evaluation of the energy involved in the switching process is presented showing that the GaN based circuit exhibits similar output losses but reduces the control power needed to operate at a specified frequency.</p>

scholarly journals High temperature, Smart Power Module for aircraft actuators

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000069-000074
Author(s):  
Khalil El Falahi ◽  
Stanislas Hascoët ◽  
Cyril Buttay ◽  
Pascal Bevilacqua ◽  
Luong-Viet Phung ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Power Module ◽  
Smart Power ◽  
Temperature Range ◽  
Electric Aircraft ◽  
Gate Driver ◽  
Proper Operation ◽  
More Electric Aircraft

More electric aircraft require converters that can operate over a wide temperature range (−55 to more than 200°C). Silicon carbide JFETs can satisfy these requirements, but there is a need for suitable peripheral components (gate drivers, passives. . . ). In this paper, we present a “smart power module” based on SiC JFETs and dedicated integrated gate driver circuits. The design is detailed, and some electrical results are given, showing proper operation of the module up to 200°C.

An Intelligent Versatile Model-Based Trajectory-Optimized Active Gate Driver for Silicon Carbide Devices

2020 ◽  
Vol 8 (1) ◽  
pp. 429-441 ◽  
Author(s):  
Shuang Zhao ◽  
Xingchen Zhao ◽  
Audrey Dearien ◽  
Yuheng Wu ◽  
Yue Zhao ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Model Based ◽  
Gate Driver

New Resonant Gate Driver Circuit for High-Frequency Application of Silicon Carbide MOSFETs

2017 ◽  
Vol 64 (10) ◽  
pp. 8277-8287 ◽  
Author(s):  
Jaya Venkata Phani Sekhar Chennu ◽  
Ramkrishan Maheshwari ◽  
Helong Li
Keyword(s):  
Silicon Carbide ◽  
High Frequency ◽  
Driver Circuit ◽  
Gate Driver ◽  
High Frequency Application
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