Processing characteristics of ion-chemical etching of single-crystal silicon by complex discharge plasma

2003 ◽  
Author(s):  
S.V. Bordusov
Keyword(s):  
Single Crystal ◽  
Chemical Etching ◽  
Discharge Plasma ◽  
Single Crystal Silicon ◽  
Crystal Silicon

scholarly journals MANAGING THE SURFACE PROPERTIES OF MATERIALS OF DISPLAY TECHNOLOGY BY MEANS OF TREATMENT IN ATMOSPHERIC DISCHARGE PLASMA

Doklady BGUIR ◽  
2019 ◽  
pp. 107-112
Author(s):  
Y. V. Zaporozhchenko ◽  
D. A. Kotov ◽  
A. V. Aksyuchits ◽  
A. N. Osipov ◽  
S. V. Paceev
Keyword(s):  
Stainless Steel ◽  
Single Crystal ◽  
Atmospheric Pressure ◽  
Discharge Plasma ◽  
Single Crystal Silicon ◽  
Adhesive Properties ◽  
Crystal Silicon ◽  
Atmospheric Discharge ◽  
Display Technology ◽  
Properties Of Materials

The results of research the surface of single-crystal silicon, glass, and stainless steel after processing in a plasma at atmospheric pressure are presented. It has been experimentally proved that after processing, the adhesive properties of the surface of materials are significantly improved.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Sign in / Sign up

Export Citation Format

Share Document