Study of field enhancement effect of a metallic shielding cavity with an aperture

2013 ◽  
Author(s):  
Li Kai ◽  
Wei Guang-hui ◽  
Pan Xiao-dong ◽  
Zhang Long ◽  
Li Xin-feng
Keyword(s):  
Field Enhancement ◽  
Enhancement Effect

Battling absorptive losses by plasmon–exciton coupling in multimeric nanostructures

RSC Advances ◽  
2015 ◽  
Vol 5 (66) ◽  
pp. 53245-53254 ◽  
Author(s):  
Alireza Rahimi Rashed ◽  
Antonio De Luca ◽  
Rakesh Dhama ◽  
Arash Hosseinzadeh ◽  
Melissa Infusino ◽  
...  
Keyword(s):  
Field Enhancement ◽  
Enhancement Effect ◽  
Exciton Coupling ◽  
Novel Approach ◽  
Plasmonic Metamaterials

This study presents a novel approach dealing with absorptive losses in plasmonic metamaterials, capitalizing on field enhancement effect in multimeric nanostructures.

scholarly journals Lightning-Rod Effect of Plasmonic Field Enhancement on Hydrogen-Absorbing Transition Metals

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1235 ◽  
Author(s):  
Norihiko Fukuoka ◽  
Katsuaki Tanabe
Keyword(s):  
Transition Metals ◽  
Metal Surfaces ◽  
Noble Metals ◽  
Field Enhancement ◽  
Operating Conditions ◽  
Optical Systems ◽  
Field Energy ◽  
Enhancement Effect ◽  
Morphological Aspect ◽  
Aspect Ratios

The plasmonic enhancement of electromagnetic field energy density at the sharp tips of nanoparticles or nanoscale surface roughnesses of hydrogen-absorbing transition metals, Pd, Ti, and Ni, is quantitatively investigated. A large degree of energy focusing is observed for these transition metals in the microwave region, even surpassing the enhancement for noble metals according to the conditions. Pd, for instance, exhibits peak field enhancement factors of 6000 and 2 × 108 in air for morphological aspect ratios of 10 and 100, respectively. Metal surfaces possibly contain such degrees of nano- or micro-scale native random roughnesses, and, therefore, the field enhancement effect may have been unknowingly produced in existing electrical and optical systems. In addition, for future devices under development, particularly in hydrogen-related applications, it is desirable to design and optimize the systems, including the choice of materials, structures, and operating conditions, by accounting for the plasmonic local energy enhancement effect around the metal surfaces.

Application of Terahertz Field Enhancement Effect in Metal Microstructures

2016 ◽  
Vol 37 (12) ◽  
pp. 1199-1212 ◽  
Author(s):  
M. Nakajima ◽  
T. Kurihara ◽  
Y. Tadokoro ◽  
B. Kang ◽  
K. Takano ◽  
...  
Keyword(s):  
Field Enhancement ◽  
Enhancement Effect

A New Carbon Nanotube-Based Field Enhanced Thermionic Cathode

2004 ◽  
Vol 858 ◽  
Author(s):  
Feng Jin ◽  
Christopher Day
Keyword(s):  
Electron Emission ◽  
Field Enhancement ◽  
Oxide Coating ◽  
Enhancement Effect ◽  
High Electron ◽  
Thermionic Cathode ◽  
Emission Properties ◽  
Effective Work ◽  
Effective Work Function ◽  
Thermionic Cathodes

ABSTRACTThe electron emission properties and field enhancement effects of carbon nanotubes (CNTs) have been extensively studied. However, all of these studies focus only on the field emission aspect of the materials and its application in cold cathode electron emitters. So far, we have not seen any studies in the literature that link CNTs with thermionic cathodes, which are an equally important cathode type because of their many applications. We present a study of field enhanced electron emissions from a new type of cathode: the CNT-based field enhanced thermionic cathode. This new cathode consists of a metal substrate with CNTs grown on top of its surface. The CNTs are coated with thermionic emission materials (BaO, SrO, and CaO). This unique cathode structure takes advantage of both the field enhancement effect from CNTs and the high electron emission capability of thermionic materials. The electron emission properties of this new cathode, particularly the field enhancement factor and effective work function, are compared with the conventional thermionic cathodes that are made of same oxide coating.

The Influence of Amorphizing Implants on Boron Diffusion in Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
H. S. Chao ◽  
P. B. Griffin ◽  
J. D. Plummer
Keyword(s):  
Point Defects ◽  
Field Enhancement ◽  
Enhancement Effect ◽  
Dislocation Loops ◽  
Boron Diffusion ◽  
Electric Field Enhancement ◽  
Diffusion Behavior ◽  
Enhanced Diffusion ◽  
Pile Up ◽  
Experimental Structure

ABSTRACTThe transient enhanced diffusion behavior of B after ion implantation above the amorphization threshold is investigated. The experimental structure uses a layer of epitaxially grown Si, uniformly doped with B to act as a diffusion monitor. Wafers using this structure are implanted with amorphizing doses of Si, As, or P and annealed for various times at various temperatures. The experimental results show that upon annealing after Si implantation, there is a large amount of B pile-up that occurs at the amorphous/crystalline (A/C) interface while B is depleted from the region just beyond the A/C interface. This pile-up/depletion phenomenon can be attributed to the dislocation loops that form at the A/C interface. These loops act as sinks for interstitial point defects. There is also B pile-up/depletion behavior for As and P implants as well. However, this behavior may be explained by an electric field enhancement effect. While dislocation loops are known to form at the A/C interface for all of the investigated implant conditions, it appears that while they are necessary to simulate for Si amorphizing implants, they may not be necessary to simulate for As and P amorphizing implants.

scholarly journals Terminal Groups Dependent Near-Field Enhancement Effect of Ti3C2Tx Nanosheets

2020 ◽  
Author(s):  
Ying-Ying Yang ◽  
Wen-Tao Zhou ◽  
Wei-Long Song ◽  
Qing-Quan Zhu ◽  
Hao-Jiang Xiong ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Oxidation Resistance ◽  
Functional Groups ◽  
Near Field ◽  
Field Enhancement ◽  
Electron Injection ◽  
Enhancement Effect ◽  
Hydroxyl Groups ◽  
Physical And Chemical

Abstract Both multilayered (ML) and few-layered (FL) Ti3C2Tx nanosheets with different dominant terminal groups have been prepared through a typical etching and delaminating procedure. Various characterizations confirm that the physical and chemical performance of the nanosheets are dependent on the dominant functional groups. It has been demonstrated that ML-Ti3C2Tx has been mainly terminated by O-related groups, which result in better oxidation resistance and stronger near-field enhancement effect. As for FL-Ti3C2Tx, which is mainly terminated by hydroxyl groups, it can be better dispersed in aqueous solution and could confine stronger near-field after coupling to Ag nanostructures by electron injection.

A High-Speed BE-SONOS NAND Flash Utilizing the Field-Enhancement Effect of FinFET

2007 ◽  
Author(s):  
Tzu-Hsuan Hsu ◽  
Hang-Ting Lue ◽  
Erh-Kun Lai ◽  
Jung-Yu Hsieh ◽  
Szu-Yu Wang ◽  
...  
Keyword(s):  
High Speed ◽  
Field Enhancement ◽  
Enhancement Effect ◽  
Nand Flash
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