Preparation of Mg-doped colloidal silica abrasive and its chemical mechanical polishing performances on silicon wafer

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

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Study on chemical mechanical polishing of silicon wafer with megasonic vibration assisted

Ultrasonics ◽

10.1016/j.ultras.2017.04.005 ◽

2017 ◽

Vol 80 ◽

pp. 9-14 ◽

Cited By ~ 17

Author(s):

Ke Zhai ◽

Qing He ◽

Liang Li ◽

Yi Ren

Keyword(s):

Silicon Wafer ◽

Chemical Mechanical Polishing ◽

Mechanical Polishing

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Theoretical model and experimental analysis of chemical mechanical polishing with the effect of slurry for abrasive removal depth and surface morphology of silicon wafer

Tribology International ◽

10.1016/j.triboint.2017.08.021 ◽

2018 ◽

Vol 117 ◽

pp. 119-130 ◽

Cited By ~ 15

Author(s):

Zone-Ching Lin ◽

Ren-Yuan Wang ◽

Shih-Hung Ma

Keyword(s):

Theoretical Model ◽

Surface Morphology ◽

Silicon Wafer ◽

Experimental Analysis ◽

Chemical Mechanical Polishing ◽

Mechanical Polishing

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Investigation of Surface Integrity in the Case of Chemical Mechanical Polishing Silicon Wafer by Molecular Dynamics Simulation Method

Advances in Artificial Reality and Tele-Existence - Lecture Notes in Computer Science ◽

10.1007/11941354_67 ◽

2006 ◽

pp. 651-659

Author(s):

Xuesong Han

Keyword(s):

Molecular Dynamics ◽

Molecular Dynamics Simulation ◽

Silicon Wafer ◽

Surface Integrity ◽

Chemical Mechanical Polishing ◽

Simulation Method ◽

Mechanical Polishing ◽

Dynamics Simulation

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Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.831 ◽

2008 ◽

Vol 600-603 ◽

pp. 831-834 ◽

Cited By ~ 9

Author(s):

Joon Ho An ◽

Gi Sub Lee ◽

Won Jae Lee ◽

Byoung Chul Shin ◽

Jung Doo Seo ◽

...

Keyword(s):

Material Removal Rate ◽

Chemical Mechanical Polishing ◽

Material Removal ◽

Colloidal Silica ◽

Removal Rate ◽

Mechanical Polishing ◽

Diamond Particles ◽

Average Grain Size ◽

Silica Slurry ◽

Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

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Increasing Efficiency of a Chemical-Mechanical Polishing of the Silicon Wafer

International Workshops and Tutorials on Electron Devices and Materials ◽

10.1109/sibedm.2006.231297 ◽

2006 ◽

Author(s):

Vladimir Khmelev ◽

Andrey Shalunov ◽

Elena Smerdina

Keyword(s):

Silicon Wafer ◽

Chemical Mechanical Polishing ◽

Mechanical Polishing

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An experimental investigation of silicon wafer thinning by sequentially using constant-pressure diamond grinding and fixed-abrasive chemical mechanical polishing

Journal of Materials Processing Technology ◽

10.1016/j.jmatprotec.2021.117453 ◽

2021 ◽

pp. 117453

Author(s):

Gengzhuo Li ◽

Chen Xiao ◽

Shibo Zhang ◽

Ruoyu Sun ◽

Yongbo Wu

Keyword(s):

Experimental Investigation ◽

Silicon Wafer ◽

Chemical Mechanical Polishing ◽

Constant Pressure ◽

Mechanical Polishing ◽

Diamond Grinding ◽

Wafer Thinning ◽

Fixed Abrasive

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Chemical Mechanical Polishing of Gallium Nitride with Colloidal Silica

Journal of The Electrochemical Society ◽

10.1149/2.024112jes ◽

2011 ◽

Vol 158 (12) ◽

pp. H1206 ◽

Cited By ~ 43

Author(s):

Hideo Aida ◽

Hidetoshi Takeda ◽

Koji Koyama ◽

Haruji Katakura ◽

Kazuhiko Sunakawa ◽

...

Keyword(s):

Gallium Nitride ◽

Chemical Mechanical Polishing ◽

Colloidal Silica ◽

Mechanical Polishing

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Axiomatic Design of a Chemical Mechanical Polishing (CMP) Wafer Carrier With Zoned Pressure Control

Microelectromechanical Systems ◽

10.1115/imece2002-33446 ◽

2002 ◽

Author(s):

Jason W. Melvin ◽

Nam P. Suh

Keyword(s):

Silicon Wafer ◽

Design Process ◽

Chemical Mechanical Polishing ◽

Axiomatic Design ◽

Normal Pressure ◽

Pressure Control ◽

Mechanical Polishing ◽

Functional Requirement ◽

Retaining Ring ◽

Successful Design

Axiomatic Design was used to develop a complete platform for chemical mechanical polishing (CMP) of silicon wafers. A functional requirement of the machine emerging from the axiomatic design process is the control of the wafer-scale polishing uniformity. Mechanisms to maintain control of the uniformity were designed, and integrated into a wafer carrier, which holds the wafer during polishing and applies normal pressure to the polishing interface. The wafer carrier is capable of controlling the pressure in four annular zones on a 200 mm wafer, as well as the pressure of the surrounding retaining ring. Initial testing of the wafer carrier indicates a successful design, offering removal non-uniformity of 1.7% after polishing 5,700 Å of SiO2 from the surface of a silicon wafer.

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