Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications

2017 ◽  
Author(s):  
Yoni Mehlman ◽  
Yasmin Afsar ◽  
Naveen Yerma ◽  
Sigurd Wagner ◽  
James C. Sturm
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Large Area

HfZnO/ZnO Heterostructures Fabricated Using Low-Cost Large-Area Compatible Sputtering Processes

2015 ◽  
Vol 1731 ◽  
Author(s):  
Chih-Hung Li ◽  
Jian-Zhang Chen ◽  
I-Chun Cheng
Keyword(s):  
Thin Film ◽  
Electrical Resistance ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Annealing Temperature ◽  
Low Cost ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Large Area ◽  
Apparent Decrease

ABSTRACTWe investigated the electrical properties of the rf-sputtered HfxZn1-xO/ZnO heterostructures. The thermal annealing on ZnO prior to the HfxZn1-xO deposition greatly influences the properties of the heterostructures. A highly conductive interface formed at the interface between HfxZn1-xO and ZnO thin films as the ZnO annealing temperature exceeded 500°C, leading to the apparent decrease of the electrical resistance. The resistance decreased with an increase of either thickness or Hf content of the HfxZn1-xO capping layer. The Hf0.05Zn0.95O/ZnO heterostructure with a 200-nm-thick 600°C-annealed ZnO exhibits a carrier mobility of 14.3 cm2V-1s-1 and a sheet carrier concentration of 1.93×1013 cm-2; the corresponding values for the bare ZnO thin film are 0.47 cm2V-1s-1 and 2.27×1012 cm-2, respectively. Rf-sputtered HfZnO/ZnO heterostructures can potentially be used to increase the carrier mobility of thin-film transistors in large-area electronics.

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

2014 ◽  
Vol 35 (12) ◽  
pp. 1266-1268 ◽  
Author(s):  
Yang Geng ◽  
Wen Yang ◽  
Hong-Liang Lu ◽  
Yuan Zhang ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Post Annealing

Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

2012 ◽  
Vol 29 (1) ◽  
pp. 018501 ◽  
Author(s):  
Shao-Juan Li ◽  
Xin He ◽  
De-Dong Han ◽  
Lei Sun ◽  
Yi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film

Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel

2016 ◽  
Vol 16 (4) ◽  
pp. 3659-3663
Author(s):  
H Yu ◽  
L Zhang ◽  
X. H Li ◽  
H. Y Xu ◽  
Y. C Liu
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Thin Film Transistors ◽  
Carrier Transport ◽  
Single Layer ◽  
Channel Structure ◽  
Gate Insulator ◽  
Large Area ◽  
Threshold Voltage Shift ◽  
High Carrier

The amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were demonstrated based on a double-layer channel structure, where the channel is composed of an ultrathin nitrogenated a-IGZO (a-IGZO:N) layer and an undoped a-IGZO layer. The double-layer channel device showed higher saturation mobility and lower threshold-voltage shift (5.74 cm2/Vs, 2.6 V) compared to its single-layer counterpart (0.17 cm2/Vs, 7.23 V). The improvement can be attributed to three aspects: (1) improved carrier transport properties of the channel by the a-IGZO:N layer with high carrier mobility and the a-IGZO layer with high carrier concentration, (2) reduced interfacial trap density between the active channel and the gate insulator, and (3) higher surface flatness of the double-layer channel. Our study reveals key insights into double-layer channel, involving selecting more suitable electrical property for back-channel layer and more suitable interface modification for active layer. Meanwhile, room temperature fabrication amorphous TFTs offer certain advantages on better flexibility and higher uniformity over a large area.

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