Analysis of high-Q on-chip inductors realized by wafer-level packaging techniques

Author(s):  
X. Sun ◽  
G. Carchon ◽  
W. De Raedt ◽  
E. Beyne
2013 ◽  
Vol 21 (1) ◽  
pp. 215-219 ◽  
Author(s):  
M. Han ◽  
S. F. Wang ◽  
G. W. Xu ◽  
Le Luo

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 001486-001519
Author(s):  
Curtis Zwenger ◽  
JinYoung Khim ◽  
YoonJoo Khim ◽  
SeWoong Cha ◽  
SeungJae Lee ◽  
...  

The tremendous growth in the mobile handset, tablet, and networking markets has been fueled by consumer demand for increased mobility, functionality, and ease of use. This, in turn, has been driving an increase in functional convergence and 3D integration of IC devices, resulting in the need for more complex and sophisticated packaging techniques. A variety of advanced IC interconnect technologies are addressing this growing need, such as Thru Silicon Via (TSV), Chip-on Chip (CoC), and Package-on-Package (PoP). In particular, the emerging Wafer Level Fan-Out (WLFO) technology provides unique and innovative extensions into the 3D packaging realm. Wafer Level Fan-Out is a package technology designed to provide increased I/O density within a reduced footprint and profile for low density single & multi-die applications at a lower cost. The improved design capability of WLFO is due, in part, to the fine feature capabilities associated with wafer level packaging. This can allow much more aggressive design rules to be applied compared to competing laminate-based technologies. In addition, the unique characteristics of WLFO enable innovative 3D structures to be created that address the need for IC integration in emerging mobile and networking applications. This paper will review the development of WLFO and its extension into unique 3D structures. In addition, the advantages of these WLFO designs will be reviewed in comparison to current competing packaging technologies. Process & material characterization, design simulation, and reliability data will be presented to show how WLFO is poised to provide robust, reliable, and low cost 3D packaging solutions for advanced mobile and networking products.


2012 ◽  
Vol 2012 (DPC) ◽  
pp. 002374-002398
Author(s):  
Zhiwei (Tony) Gong ◽  
Scott Hayes ◽  
Navjot Chhabra ◽  
Trung Duong ◽  
Doug Mitchell ◽  
...  

Fan-out wafer level packaging (FO-WLP) has become prevalent in past two years as a package option with large number of pin count. As the result of early development, the single die packages with single-sided redistribution has reached the maturity to take off. While the early applications start to pay back the investment on the technology, the developments have shifted to more advanced packaging solutions with System-in-Package (SiP) and 3D applications. The nature of the FO-WLP interconnect along with the material compatibility and process capability of the Redistributed Chip Package (RCP) have enabled Freescale to create novel System-in-Package (SiP) solutions not possible in more traditional packaging technologies or Systems-on-Chip. Simple SiPs using two dimensional (2D), multi-die RCP solutions have resulted in significant package size reduction and improved system performance through shortened traces when compared to discretely packaged die or a substrate based multi-chip module (MCM). More complex three dimensional (3D) SiP solutions allow for even greater volumetric efficiency of the packaging space. 3D RCP is a flexible approach to 3D packaging with complexity ranging from Package-on-Package (PoP) type solutions to systems including ten or more multi-sourced die with associated peripheral components. Perhaps the most significant SiP capability of the RCP technology is the opportunity for heterogeneous integration. The combination of various system elements including, but not limited to SMDs, CMOS, GaAs, MEMS, imaging sensors or IPDs gives system designers the capability to generate novel systems and solutions which can then enable new products for customers. The following paper further discusses SiP advantages, applications and examples created with the RCP technology. Rozalia/Ron ok move from 2.5/3D to Passive 1-4-12.


Sign in / Sign up

Export Citation Format

Share Document