Impact of slurry in Cu CMP (chemical mechanical polishing) on Cu topography of Through Silicon Vias (TSVs), re-distribution layers, and Cu exposure

Chemical mechanical polishing (CMP) of Cu pattern wafer based alkaline slurry in GLSI with R(NH2)n as complexing agent was investigated. In Cu CMP procedure, it is necessary to minimize the surface dishing and erosion while maintaining good planarity. This requirements are met through the complexing agents. Based on the reaction mechanism analysis of Cu in alkaline slurry with R(NH2)n as complexing agent in CMP, the performance of Cu dishing and erosion were discussed. The results showed that the slurry stability can be improved obviously by the addition of R(NH2)n as complexing agent, both Cu1 and Cu2 have good dishing and erosion performance. Furthermore, the dishing condition of Cu2 (180-230nm) is better than that of Cu1 (280-370nm), and the erosion condition of Cu2 (230-260nm) is also better than that of Cu1 (450-500nm).

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Use of Dilute HF With Controlled Oxygen for Post Cu CMP Cleans

MRS Proceedings ◽

10.1557/proc-566-267 ◽

1999 ◽

Vol 566 ◽

Cited By ~ 1

Author(s):

K. K. Christenson ◽

C. Pizetti

Keyword(s):

Dissolved Oxygen ◽

Production Process ◽

Chemical Mechanical Polishing ◽

Batch Process ◽

Mechanical Polishing ◽

Comparable Rate ◽

Copper Cmp ◽

Etch Rates ◽

Cu Cmp ◽

Semiconductor Production

Wet cleaning of wafers during the semiconductor production process often requires uniform removal of a few nanometers of material. Ideally, a single cleaning chemistry can be found that etches all exposed features at a comparable rate. Etch rates near 1 nm/min are desired for batch process and near 10 nm/min for single-wafer processes. A mixture of 500:1 DHF (dilute HF) with dissolved oxygen controlled near parts-per-million (ppm) levels has been found to meet these requirements for post copper CMP (chemical-mechanical polishing) cleans with exposed SiO2 and Cu metal.

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The Copper Corrosion and Sulfur Contamination Generated by a Three-Step Copper Chemical-Mechanical Polishing Process

MRS Proceedings ◽

10.1557/proc-0914-f09-10 ◽

2006 ◽

Vol 914 ◽

Author(s):

Chun-Ping Liu ◽

Yen-Shih Ho ◽

Tien-Chen Hu ◽

Bae-Heng Tseng

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Copper Corrosion ◽

Polishing Process ◽

Root Cause ◽

Chemical Mechanical Polishing Process ◽

Cu Cmp ◽

Cu Corrosion ◽

Sulfur Contamination

AbstractThis article shows the root cause of Cu corrosion and sulfur contamination due sulfite vapor reflow through drainpipe of load cup to the original three-step Cu CMP equipment. Now, we provide a solution which to modify the arrangement of the drainpipe in original three-step Cu CMP equipment. This is an effective implement for reduction the defects of Cu corrosion and sulfur contamination from long-term observations.

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Modeling of chemical mechanical polishing at multiple scales

10.31274/rtd-180813-13199 ◽

2002 ◽

Cited By ~ 1

Author(s):

Guanghui Fu

Keyword(s):

Chemical Mechanical Polishing ◽

Multiple Scales ◽

Mechanical Polishing

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Failure and Stress Analysis of Cu TSVs Using GHz-Scanning Acoustic Microscopy and Scanning Infrared Polariscopy

ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2015p0124 ◽

2015 ◽

Author(s):

Ingrid De Wolf ◽

Ahmad Khaled ◽

Martin Herms ◽

Matthias Wagner ◽

Tatjana Djuric ◽

...

Keyword(s):

Failure Analysis ◽

Stress Analysis ◽

Rayleigh Waves ◽

Acoustic Microscopy ◽

Scanning Acoustic Microscopy ◽

Through Silicon Vias ◽

Stress Anisotropy ◽

Silicon Vias ◽

Ic Technology ◽

Detection Of Defects

Abstract This paper discusses the application of two different techniques for failure analysis of Cu through-silicon vias (TSVs), used in 3D stacked-IC technology. The first technique is GHz Scanning Acoustic Microscopy (GHz- SAM), which not only allows detection of defects like voids, cracks and delamination, but also the visualization of Rayleigh waves. GHz-SAM can provide information on voids, delamination and possibly stress near the TSVs. The second is a reflection-based photoelastic technique (SIREX), which is shown to be very sensitive to stress anisotropy in the Si near TSVs and as such also to any defect affecting this stress, such as delamination and large voids.

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Circuit Modeling of Shielded Differential Carbon Nanotube Bundle Filled Through-Silicon Vias

2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO) ◽

10.1109/nemo49486.2020.9343548 ◽

2020 ◽

Author(s):

Qing-Hao Hu ◽

Wen-Sheng Zhao ◽

Da-Wei Wang ◽

Gaofeng Wang

Keyword(s):

Carbon Nanotube ◽

Circuit Modeling ◽

Through Silicon Vias ◽

Silicon Vias ◽

Nanotube Bundle

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Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

Applied Sciences ◽

10.3390/app11104358 ◽

2021 ◽

Vol 11 (10) ◽

pp. 4358

Author(s):

Hanchul Cho ◽

Taekyung Lee ◽

Doyeon Kim ◽

Hyoungjae Kim

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Shape Error ◽

Profile Shape ◽

Conditioning Process ◽

Polishing Pad ◽

Simulation Based ◽

Diamond Conditioner ◽

Pad Conditioning ◽

Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

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