Development of High Frequency Device Using Glass or Fused Silica with 3D Integration

2017 ◽  
Author(s):  
Shintaro Takahashi ◽  
Yoichiro Sato ◽  
Kohei Horiuchi ◽  
Motoshi Ono
Keyword(s):  
High Frequency ◽  
Fused Silica ◽  
3D Integration ◽  
High Frequency Device

scholarly journals Opto-Mechanical Inertial Sensors (OMIS) for High Temporal Resolution Gravimetry

2020 ◽  
Author(s):  
Lee Kumanchik ◽  
Felipe Guzman ◽  
Claus Braxmaier
Keyword(s):  
High Frequency ◽  
High Stability ◽  
Vibration Isolation ◽  
Inertial Sensors ◽  
Response Times ◽  
Free Spectral Range ◽  
Optical Cavity ◽  
Fused Silica ◽  
High Temporal Resolution ◽  
Free Falling

<p>Gravity field measurement by free-falling atoms has the potential for very high stability<br>over time as the measurement exposes a direct, fundamental relationship between mass<br>and acceleration. However, the measurement rate of the current state-of-the-art limits<br>the performance at short timescales (greater than 1 Hz). Classical inertial sensors operate<br>at much faster response times and are thus natural companions for free-falling atom<br>sensors. Such a hybrid device would gain the ultra-high stability of the free-falling atom<br>sensor while greatly extending the bandwidth to higher frequency using the classical<br>sensor. This requires the stable bandwidth of both devices to overlap sufficiently. We<br>have developed opto-mechanical inertial sensors (OMIS) with good long term stability for<br>just this purpose. The sensors are made of highly stable fused silica material, feature a<br>monolithic optical cavity for displacement readout, and utilize a laser diode stabilized to<br>a molecular reference. With no temperature control and only the thermal shielding<br>provided by the vacuum chamber, this device is stable down to 0.1 Hz which overlaps<br>with the bandwidth of free-falling atom sensors. The OMIS are self-calibrating by<br>converting the fundamental resonances of a molecular gas into length using the<br>free-spectral range of the optical cavity,  <em>FSR = c/2nL</em>,  and then sampling the OMIS<br>mechanical damping rate and resonance frequency using a nearby piezo. This<br>acceleration calibration is potentially transferable to a companion free-falling atom<br>sensor. Readout is performed by modulating the cavity length of the OMIS with one<br>cavity mirror being the OMIS itself and the other being a high frequency resonator. The<br>high frequency resonator is driven by a nearby piezo well above the response rate of the<br>OMIS and acts like an ultrastable quartz clock. The resulting highly stable tone is<br>demodulated by the readout electronics. For the low finesse optical cavity used here, this<br>yields a displacement resolution of 2x10<sup>-13</sup> m/√Hz and a high frequency acceleration<br>resolution of 400 n<em>g</em> /√Hz. At 0.1 Hz the acceleration resolution is 1.5 μ<em>g</em> /√Hz limited by<br>the stability of our vibration isolation stage. The OMIS dimensions are about 30 mm x 30<br>mm x 5 mm and can be fiber coupled to enable co-location with other sensors or as<br>standalone devices for future gravimetry both on Earth and in space</p>

Nanomaterials for high frequency device and photocatalytic applications: Mg-Zn-Ni ferrites

2018 ◽  
Vol 746 ◽  
pp. 532-539 ◽  
Author(s):  
Rohit Sharma ◽  
Prashant Thakur ◽  
Manoj Kumar ◽  
Pankaj Sharma ◽  
Vineet Sharma
Keyword(s):  
High Frequency ◽  
High Frequency Device ◽  
Photocatalytic Applications

Properties of Fe-doped semi-insulating GaN substrates for high-frequency device fabrication

2007 ◽  
Vol 305 (2) ◽  
pp. 403-407 ◽  
Author(s):  
J.A. Freitas ◽  
J.G. Tischler ◽  
J.-H. Kim ◽  
Y. Kumagai ◽  
A. Koukitu
Keyword(s):  
High Frequency ◽  
Device Fabrication ◽  
High Frequency Device

High-Frequency Device Options for Systems-on-Chip

2019 ◽  
Vol 11 (6) ◽  
pp. 445-460
Author(s):  
Frank Schwierz
Keyword(s):  
High Frequency ◽  
Systems On Chip ◽  
On Chip ◽  
High Frequency Device

Micromagnetic study on micro-structured ferromagnetic thin film for high-frequency-device applications

2013 ◽  
Vol 63 (3) ◽  
pp. 659-662 ◽  
Author(s):  
K. Ito ◽  
T. Takashima ◽  
T. Tanaka ◽  
K. Matsuyama
Keyword(s):  
Thin Film ◽  
High Frequency ◽  
Device Applications ◽  
High Frequency Device

2.5 / 3D PACKAGING TECHNOLOGY SOLUTION FOR HIGH FREQUENCY DEVICE.

2013 ◽  
Vol 2013 (1) ◽  
pp. 000013-000016
Author(s):  
Yasuhiro Morikawa ◽  
Takahide Murayama ◽  
Toshiyuki Sakuishi ◽  
Koukou Suu
Keyword(s):  
High Frequency ◽  
High Speed ◽  
High Performance ◽  
Film Formation ◽  
Process Time ◽  
Plating Bath ◽  
Chemical Plating ◽  
3D Packaging ◽  
High Frequency Device ◽  
Technology Solution

“2.5D silicon interposers” and “Hetero 3D stacked” technology for high-performance LSI are gathering the most attention from now on. These technologies can solve interconnection problems using TSV (Through Silicon Via) to electrically connect stacked each function devises. 2.5D and hetero-3D Si integration has great advantages over conventional 2D devices such as high packaging density, small wire length, high-speed operation, low power consumption, and high feasibility for parallel processing. But, the radical problem about the TSV production cost is not still solved. In particular, the demand to a new plating bath technology to shorten Cu plating time is expected. On the other hand, TSV isolation liner materials with lower cost for high frequency devices will be necessary in the future. “Scallop-free” etching process has developed for TSV fabrication [1]. As a result, the smooth-sidewall had proved shorten PVD process time [2]. At first, it investigated a cost correlation of taper-shape etching and Cu-ECP (electro-chemical plating) in this paper. And then, a polyurea film using a vapor deposition polymerization technology (which is Ulvac's FPF/PV large panel technology) tried introduction as isolation liner for next-generation high frequency device. And, it performed the film formation to a TSV pattern.

scholarly journals The Use of Ozone in High Frequency Device to Treat Hand Ulcers in Leprosy: a Case Study

2015 ◽  
Vol 43 (3) ◽  
pp. 195-199 ◽  
Author(s):  
Felipe J.J. Reis ◽  
Helia Correia ◽  
Roberto Nagen ◽  
Maria Kátia Gomes
Keyword(s):  
High Frequency ◽  
High Frequency Device
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