The Stress State of BGA Solder Joints Influenced by the Grain Orientations of Neighboring Joints

2018 ◽  
Author(s):  
Andreas Lovberg ◽  
Per-Erik Tegehall
Keyword(s):  
Stress State ◽  
Solder Joints ◽  
Grain Orientations

Predictive Failure Analysis of Solder Joints with Simultaneous High Speed EBSD and EDS

2018 ◽  
Author(s):  
J. Lindsay ◽  
P. Trimby ◽  
J. Goulden ◽  
S. McCracken ◽  
R. Andrews
Keyword(s):  
High Speed ◽  
Solder Joints ◽  
Phase Distribution ◽  
Bond Failure ◽  
Microstructural Parameters ◽  
Snpb Solder ◽  
Grain Orientations ◽  
Accelerated Thermal Cycling ◽  
The Relationship ◽  
Opening Up

Abstract The results presented here show how high-speed simultaneous EBSD and EDS can be used to characterize the essential microstructural parameters in SnPb solder joints with high resolution and precision. Analyses of both intact and failed solder joints have been carried out. Regions of strain localization that are not apparent from the Sn and Pb phase distribution are identified in the intact bond, providing key insights into the mechanism of potential bond failure. In addition, EBSD provides a wealth of quantitative detail such as the relationship between parent Sn grain orientations and Pb coarsening, the morphology and distribution of IMCs on a sub-micron scale and accurate grain size information for all phases within the joint. Such analyses enable a better understanding of the microstructural developments leading up to failure, opening up the possibility of improved accelerated thermal cycling (ATC) testing and better quality control.

Morphologies and grain orientations of Cu–Sn intermetallic compounds in Sn3.0Ag0.5Cu/Cu solder joints

2012 ◽  
Vol 86 ◽  
pp. 157-160 ◽  
Author(s):  
Wei Liu ◽  
Yanhong Tian ◽  
Chunqing Wang ◽  
Xuelin Wang ◽  
Ruiyang Liu
Keyword(s):  
Intermetallic Compounds ◽  
Solder Joints ◽  
Grain Orientations

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

Short Stress State Questionnaire

2015 ◽  
Vol 31 (1) ◽  
pp. 20-30 ◽  
Author(s):  
William S. Helton ◽  
Katharina Näswall
Keyword(s):  
Stress State ◽  
Factor Structure ◽  
Human Performance ◽  
Self Report ◽  
Confirmatory Factor ◽  
Stress States ◽  
Related Stress ◽  
Using Data ◽  
Task Conditions ◽  
Multiple Samples

Conscious appraisals of stress, or stress states, are an important aspect of human performance. This article presents evidence supporting the validity and measurement characteristics of a short multidimensional self-report measure of stress state, the Short Stress State Questionnaire (SSSQ; Helton, 2004 ). The SSSQ measures task engagement, distress, and worry. A confirmatory factor analysis of the SSSQ using data pooled from multiple samples suggests the SSSQ does have a three factor structure and post-task changes are not due to changes in factor structure, but to mean level changes (state changes). In addition, the SSSQ demonstrates sensitivity to task stressors in line with hypotheses. Different task conditions elicited unique patterns of stress state on the three factors of the SSSQ in line with prior predictions. The 24-item SSSQ is a valid measure of stress state which may be useful to researchers interested in conscious appraisals of task-related stress.

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